Fairchild FDM3622 service manual

tm

FDM3622
N-Channel PowerTrench® MOSFET

100V, 4.4A, 60mΩ
Features

 Max r
 Max r
 Low Miller Charge
 Low QRR Body Diode
 Optimized efficiency at high frequencies
 UIS Capability (Single Pulse and Repetitive Pulse)
 RoHS Compliant

= 60mΩ at VGS = 10V, ID = 4.4A

DS(on)

= 80mΩ at VGS = 6.0V, ID = 3.8A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching performance.

Application

 Distributed Power Architectures and VRMs.
 Primary Switch for 24V and 48V Systems

 High Voltage Synchronous Rectifier
 Formerly developmental type 82744

January 2007

®

process that has

FDM3622 N-Channel PowerTrench

®

MOSFET

Bottom

8

7

6

5

1

2

3

4

D

D

Top

D

D

D

5

D

6

D

7

G

S

S

S

D

8

Power 33

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) 4.4

-Pulsed 20
Power Dissipation (Note 1a) 2.1
Power Dissipation (Note 1b) 0.9
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

A

Thermal Characteristics

G

4

S

3

S

2

S

1

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case (Note 1) 3.0
Thermal Resistance, Junction to Ambient (Note 1a) 60

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDM3622 FDM3622 Power 33 7’’ 8mm 3000 units

©2006 Fairchild Semiconductor Corporation
FDM3622 Rev.B

°C/W

1

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FDM3622 N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

I

DSS

I

GSS

On Characteristics

V

GS(th)

r

DS(on)

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 100 V
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±20V, V

VDS = 80V, VGS = 0V 1

TJ = 100°C 250

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 2 4 V

VGS = 10V, ID = 4.4A 44 60

Static Drain to Source On Resistance

VGS = 10V, ID = 4.4A , TJ = 150°C 92 120

Dynamic Characteristics

C

iss

C

oss

C

rss

Rg Gate Resistance VDS = 15mV, f = 1MHz 3.1 Ω

Input Capacitance
Output Capacitance 125 170 pF
Reverse Transfer Capacitance 35 55 pF

VDS = 25V, VGS = 0V,
f = 1MHz

820 1090 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q

Q

g
gs

gd

Turn-On Delay Time
Rise Time 25 40 ns
Turn-Off Delay Time 35 56 ns

VDD = 50V, ID = 4.4A
VGS = 10V, R

GEN

= 24Ω

11 20 ns

Fall Time 26 42 ns
Total Gate Charge V
Gate to Source Gate Charge 3.6 nC

Gate to Drain “Miller” Charge 3.4 nC

= 10V

GS

VDD = 50V
ID = 4.4A

13 17 nC

μA

mΩVGS = 6.0V, ID = 3.8A 56 80

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

θJA

user's board design.

(a)R

θJA

(b)R

θJA

2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.

FDM3622 Rev.B

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 108 nC

is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

= 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
= 135°C/W when mounted on a minimum pad of 2 oz copper.

V
V

IF = 4.4A, di/dt = 100A/μs

a. 60°C/W when mounted on

2

pad of 2 oz copper

a 1 in

= 0V, IS = 4.4A 1.25 V

GS

= 0V, IS = 2.2A 1.0 V

GS

56 ns

is guaranteed by design while R

θJC

b. 135°C/W when mounted on a
minimum pad of 2 oz copper

2

is determined by the

θJA

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FDM3622 N-Channel PowerTrench

Typical Characteristics T

10

VGS = 10V

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

0 0.5 1.0 1.5 2.0 2.5 3.0

Figure 1.

80

70

60

, DRAIN TO SOURCE

ON RESISTANCE (mΩ)

50

DS(ON)

r

VDS, DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics Figure 2.

ID = 4.4A

ID = 0.2A

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

TA = 25oC

= 25°C unless otherwise noted

J

VGS = 5V

VGS = 4.7V

VGS = 4.5V

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

2.5

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

2.0

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-80 -40 0 40 80 120 160

TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 4.4A

Normali z e d O n - R esistance

vs Junction Temperature

10

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

V

= 15V

DD

8

, DRAIN CURRENT (A)

D

I

6

4

2

TJ = 150oC

TJ = 25oC

TJ = -55oC

®

MOSFET

10

8

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

FDM3622 Rev.B

40

468

, GATE TO SOURCE VOLTAGE (V)

V

GS

10

Figure 3. On-Re sistance vs G ate to

Source Voltage

VDD = 50V

WAVEFORMS IN
DESCENDING ORDER:

ID = 4.4A
ID = 1A

03691215

Figure 5.

Qg, GATE CHARGE (nC)

Gate Charge Characteristics Figure 6. Capacitance vs Drain

0

3.0 3.5 4.0 4.5 5.0 5.5 6.0

1200

1000

100

C, CAPACITANCE (pF)

10

0.1 1 10 100

3

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4. Transfer Characteristics

C

= CGS + C

ISS

C

≅ C

+ C

OSS

DS

GD

C

= C

RSS

GD

V

= 0V, f = 1MHz

GS

VDS, DRAIN TO SOURCE VOLTAGE (V)

to Source Voltage

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GD