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FDLL485B
General Description:
A General Purpose diode that couples high forward
conductance fast switching speed and high blocking
voltages in a glass leadless LL-34 Surface Mount
package.
Placement of the Expansion Gap has no relationship to
the location of the Cathode Terminal which is indicated
by the first color band.
Expansion Gap
High Conductance,
Low Leakage Diode
Absolute Maximum Ratings* TA = 25
Sym Parameter Value Units
O
C unless otherwise noted
RED
GRAY
T
stg
T
J
P
D
Linear Derating Factor from T
R
OJA
W
iv
I
O
I
F
i
f
i
F(surge)
Storage Temperature -65 to +200
Operating Junction Temperature -65 to +200 OC
Total Power Dissipation at TA = 25OC 500 mW
= 25OC 3.33 mW/OC
A
Thermal Resistance Junction-to-Ambient 350 OC/W
Working Inverse Voltage 180 V
Average Rectified Current 200 mA
DC Forward Current (IF) 500 mA
Recurrent Peak Forward Current 600 mA
Peak Forward Surge Current (IFSM) Pulse Width = 1.0 second 1.0 Amp
Pulse Width = 1.0 microsecond 4.0 Amp
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Electrical Characteristics TA = 25
O
C unless otherwise noted
O
C
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
BVBreakdown Voltage 200 V IR= 100 uA
IRReverse Leakage 25 nA VR= 180 V
5.0 uA VR= 180 V TA = 150OC
VFForward Voltage 1.00 V IF= 100 mA
CTCapacitance 6.0 pF VR= 0.0 V,f = 1.0 MHz
© 1997 Fairchild Semiconductor Corporation
THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF
THE CATHODE TERMINAL OF THE DEVICE. THE EXPANSION GAP & CATHODE BAND CAN BE
ON THE SAME TERMINAL OR AT OPPOSITE TERMINALS OF THE DIODE.
TERMINALS:
DUMET (ALLOY 47)
0.059 (1.499)
0.055 (1.397)
0.138 (3.505)
0.130 (3.302)
0.104 (2.64)
EXPANSION GAP
REFERENCE
GLASS SLEEVE
0.020 (0.50)
0.014 (0.35)
LL-34
JEDEC (AC VERSION)
Fairchild Semiconductor's Criteria
5-MAR-98