Fairchild FDL100N50F service manual

FDL100N50F

N-Channel MOSFET,FRFET

500V, 100A, 0.055Ω

FDL100N50F N-Channel MOSFET

May 2009

TM

UniFET

Features

•R

• Low gate charge ( Typ. 238nC)

• Low Crss ( Typ. 64pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS Compliant

= 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A

DS(on)

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.

D

G

TO-264

G

SD

MOSFET Maximum Ratings T

Symbol Parameter FDL100N50F Units

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns

P

D

, T

T

J

STG

T

L

*Drain current limited by maximum junction temperature

Drain to Source Voltage 500 V

Gate to Source Voltage ±30 V

Drain Current

Drain Current - Pulsed (Note 1) 400 A

Single Pulsed Avalanche Energy (Note 2) 5000 mJ

Avalanche Current (Note 1) 100 A

Repetitive Avalanche Energy (Note 1) 73.5 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

FDL Series

= 25oC unless otherwise noted

C

-Continuous (T

-Continuous (T

(T

= 25oC) 2500 W

C

- Derate above 25

= 25oC) 100

C

= 100oC) 60

C

o

C20W/

S

300

o

o

Thermal Characteristics

Symbol Parameter Min. Max. Units

R

θJC

θCS

R

θJA

Thermal Resistance, Junction to Case - 0.05

Thermal Resistance, Case to Sink Typ. 0.1 -

Thermal Resistance, Junction to Ambient - 30

o

C/WR

A

o

C

C

C

©2009 Fairchild Semiconductor Corporation
FDL100N50F Rev. A

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDL100N50F FDL100N50F TO-264 - - 30

FDL100N50F N-Channel MOSFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
∆BV

∆T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC 500 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 250µA, Referenced to 25oC-0.5-V/

D

V

= 500V, V

DS

= 400V, TC = 125oC - - 100

V

DS

= 0V - - 10

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V

Static Drain to Source On Resistance VGS = 10V, ID = 50A - 0.043 0.055 Ω

Forward Transconductance VDS = 20V, ID = 50A (Note 4) -95-S

Dynamic Characteristics

C

C

C

Q

Q

Q

iss

oss

rss

g(tot)

gs

gd

Input Capacitance

Output Capacitance - 1700 - pF

Reverse Transfer Capacitance - 64 - pF

Total Gate Charge at 10V

Gate to Source Gate Charge - 74 - nC

Gate to Drain “Miller” Charge - 95 - nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 186 - ns

Turn-Off Delay Time - 202 - ns

Turn-Off Fall Time - 105 - ns

= 25V, VGS = 0V

V

DS

f = 1MHz

= 400V, ID = 50A

V

DD

V

= 10V

GS

V

= 250V, ID = 50A

DD

R

= 4.7Ω

G

- 12000 - pF

- 238 - nC

-63-ns

µA

o

C

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1mH, I

3. I

≤ 100A, di/dt ≤ 200A/µs, VDD ≤ BV

SD

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDL100N50F Rev. A

Maximum Continuous Drain to Source Diode Forward Current - - 100 A

Maximum Pulsed Drain to Source Diode Forward Current - - 400 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 1.5 - nC

= 100A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs

F

= 100A - - 1.5 V

SD

SD

2

= 100A

- 250 - ns

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Typical Performance Characteristics

FDL100N50F N-Channel MOSFET

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

300

V

=

15.0 V

GS

10.0 V

8.0 V

100

7.0 V

6.5 V

6.0 V

10

400

100

150oC

25oC

10

, Drain Current[A]

D

I

*Notes:

µ

s Pulse Test

1

0.5

0.1 1 10

1. 250

2. T

= 25oC

C

VDS, Drain-Source Voltage[V]

, Drain Current[A]

D

I

1

46810

-55oC

*Notes:

= 20V

1. V

DS

µ

s Pulse Test

2. 250

VGS, Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.07

0.06

,

]

Ω

[

0.05

DS(ON)

R

0.04

Drain-Source On-Resistance

0.03
0 50 100 150 200 250

ID, Drain Current [A]

VGS = 10V

VGS = 20V

*Note: TC = 25oC

300

100

150oC

10

, Reverse Drain Current [A]

S

I

1

0.0 0.5 1.0 1.5

25oC

*Notes:

1. VGS = 0V

2. 250

µ

s Pulse Test

VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

30000

25000

20000

15000

10000

Capacitances [pF]

5000

0

10

FDL100N50F Rev. A

C

iss

C

oss

C

C

C

C

-1

rss

oss

iss

rss

110

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted

= Cds + C

gd

= C

gd

*Note:

1. V

= 0V

GS

2. f = 1MHz

)

30

10

VDS = 100V
V

= 250V

8

V

DS

= 400V

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

0

0 50 100 150 200 250

Qg, Total Gate Charge [nC]

3

*Note: ID = 50A

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