Fairchild FDJ129P, FDJ129P Schematic [ru]

November 2007

FDJ129P

P-Channel -2.5 Vgs Specified PowerTrench MOSFET

FDJ129P

tm

General Description

This P-Channel -2.5V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.

Applications

• Battery management

• Load switch

G

S

S

S

SC75-6 FLMP

S

S

Features

• –4.2 A, –20 V. R

R

• Low gate charge

• High performance trench technology for extremely

DS(ON)

low R

• Compact industry standard SC75-6 surface mount

package

• RoHS Compliant

4

5

6

= 70 mΩ @ VGS = –4.5 V

DS(ON)

= 120 mΩ @ VGS = –2.5 V

DS(ON)

Bottom Drain

3

2

1

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

Symbol Parameter Ratings Units

V

Drain-Source Voltage –20 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) –4.2 A

– Pulsed –16

PD Power Dissipation for Single Operation (Note 1a) 1.6 W

TJ, T

Operating and Storage Junction Temperature Range

STG

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 77

± 12

–55 to +150

V

°C

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.A FDJ129P 7’’ 8mm 3000 units

2007 Fairchild Semiconductor Corpora tion

FDJ129P Rev G (W)

FDJ129P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

J

Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA

V

= 0 V, ID = –250 µA

GS

I

= –250 µA,Referenced to 25°C

D

–20 V

–18

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = –4.5 V, VDS = –5 V –8 A

D(on)

V

= VGS, ID = –250 µA

DS

I

= –250 µA,Referenced to 25°C

D

VGS = –4.5 V, ID = –4.2 A
V

= –2.5 V, ID = –3.3 A

GS

V

= –4.5 V, ID = –4.2,TJ=125°C

GS

–0.6 –1.1 –1.5 V

3

54

91
72

70
120
100

mV/°C

mΩ

gFS Forward Transconductance VDS = –5 V, ID = –4.2 A 11 S

Dynamic Characteristics

C

Input Capacitance 585 780 pF

iss

C

Output Capacitance 124 170 pF

oss

C

Reverse Transfer Capacitance

rss

V

= –10 V, V

DS

f = 1.0 MHz

= 0 V,

GS

61 95 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 10 20 ns

d(on)

tr Turn–On Rise Time 9 18 ns

t

Turn–Off Delay Time 17 30 ns

d(off)

tf Turn–Off Fall Time

Qg Total Gate Charge 4 6 nC

Qgs Gate–Source Charge 1.1 nC

Qgd Gate–Drain Charge

= –10 V, ID = –1 A,

V

DD

= –4.5 V, R

V

GS

= –10 V, ID = –4.2 A,

V

DS

V

= –4.5 V

GS

GEN

= 6 Ω

10 20 ns

1.2 nC

Drain–Source Diode Characteristics and Maximum Ratings

VSD Drain–Source Diode Forwar Voltage VGS = 0 V, IS = –1.5 A (Note 2) –0.7 –1.2 V

trr Diode Reverse Recovery Time 16 nS

Qrr Diode Reverse Recovery Charge

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

a) 77°C/W when mounted

on a 1in2 pad of 2 oz
copper.

I

= –4.2 A,

F

d

= 100 A/µs

iF/dt

13 nC

b) 110°C/W when mounted

on a minimum pad of 2 oz
copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDJ129P Rev G (W)

Typical Characteristics

FDJ129P

16

VGS=-4.5V

12

8

, DRAIN CURRENT (A)

D

4

-I

0

01234

-3.5V

, DRAIN TO SOURCE VOLT AGE (V)

-V

DS

-3.0V

-2.5V

-2.0V

1.8

VGS=-2.5V

1.6

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8
0 4 8 12 16

-3.0V

-3.5V

-I

, DRAIN CURRENT (A)

D

-4.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.4

ID = -4.2A

1.3
= -4.5V

V

GS

1.2

1.1

1

, NORMALIZED

DS(ON)

0.9

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.7

-50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (oC)

J

0.22

0.18

0.14

TA = 125oC

0.1

, ON-RESISTANCE (OHM)

0.06

DS(ON)

R

0.02
12345

TA = 25oC

-V

, GATE TO SOURCE VOLTAGE (V)

GS

-4.5V

ID = -2.1A

Figure 3. On-Resistance Variation

withTemperature.

12

VDS = -5V

9

6

, DRAIN CURRENT (A)

3

D

-I

0

0.5 1 1.5 2 2.5 3

, GATE TO SOURCE VOLTAGE (V)

-V

GS

TA = -55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

125oC

25oC

Figure 4. On-Resistance Variation with

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

with Source Current and Temperature.

Gate-to-Source Voltage.

TA = 125oC

25oC

-55oC

-V

BODY DIODE FORWARD VOLTAGE (V)

SD,

FDJ129P Rev G (W)