Fairchild FDB3652, FDP3652, FDI3652 service manual

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FDB3652 / FDP3652 / FDI3652

N-Channel PowerTrench® MOSFET 100V, 61A, 16mΩ

FDB3652 / FDP3652 / FDI3652

October 2002

Features

•r

•Q

• Low Miller Charge

•Low Q

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82769

GATE

MOSFET Maximum Ratings T

= 14mΩ (Typ.), V

DS(ON)

(tot) = 41nC (Typ.), V

g

Body Diode

RR

SOURCE

TO-263AB

FDB SERIES

= 10V, ID = 61A

GS

= 10V

GS

DRAIN

(FLANGE)

DRAIN

(FLANGE)

= 25°C unless otherwise noted

C

TO-220AB

FDP SERIES

Applications

• DC/D C C onverters an d Of f -li ne UPS

• Distributed P ower Arc hitectures and VRMs

• Primary Switch for 24V and 48V Syst ems

• High Voltage Synchronous Rectifier

• Direct Injection / Diesel Injection Systems

• 42V Automotiv e Load Control

• Electronic Valve Train Systems

SOURCE

DRAIN

GATE

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

TO-262AA

FDI SERIES

G

D

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 100 V Gate to Source Voltage ±20 V Drain Curr e nt Continuous (T

I

D

Continuous (T Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 10V) 43 A

C

= 25oC, VGS = 10V) with R

amb

= 43oC/W) 9 A

θJA

61 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

Single Pulse A valanche Energy (Note 1) 182 mJ Power dissipation 150 W

o

Derate above 25 Operating and Storage Temperature -55 to 175

STG

C1.0W/

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

This product ha s been des igned to me et the e xtr eme test c ondit ions and envir onment deman ded by the automot ive indus t ry. For a

All Fairchild Semiconductor prod ucts are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

Thermal Resistance Junction to Case TO-220, TO-263, TO-262 1.0 Thermal Resistance Junction to Ambient TO-220, TO-263, TO-262 (Note 2) 62 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

certification.

FDB3652 / FDP3652 / FDI3652Rev. B

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB3652 FDB3652 TO-263AB 330mm 24mm 800 units FDP3652 FDP3652 TO-220AB Tube N/A 50 units

FDI3652 FDI3652 TO- 262AA Tube N/A 50 units

FDB3652 / FDP3652 / FDI3652

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Voltag e ID = 250µA, VGS = 0V 105 - - V

V

= 80V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC= 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

= 61A, VGS = 10V - 0.014 0.016

I

D

I

= 30A, VGS = 6V - 0.018 0.026

Drain to S ou r c e On Re si st ance

D

= 61A, VGS = 10V,

I

D

T

= 175oC

J

- 0.035 0.043

Dynamic Characteristics

C

ISS

C

OSS

C

RSS

Q

g(TOT)

Q

g(TH)

Q

gs

Q

gs2

Q

gd

Input Capacitance Output Capacitance - 390 - pF Reverse Transfer Capacitance - 100 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V Threshold Gate Charge VGS = 0V to 2V - 5 6.5 nC Gate to Source Gate Charg e - 15 - nC Gate Charge Threshold to Plateau - 10 - nC

V

DD

I

= 61A

D

I

= 1.0m A

g

= 50V

Gate to Drain “Miller” Charge - 10 - nC

- 2880 - pF

41 53 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 12 - ns Rise Time - 85 - ns Turn-Off Delay Time - 26 - ns Fall Time - 45 - ns Turn-Off Time - - 107 ns

(VGS = 10V)

= 50V, ID = 61A

V

DD

V

= 10V, RGS = 6.8Ω

GS

--146ns

Drain-Source Diode Characteristics

I

= 61A - - 1.25 V

V

SD

t

rr

Q

RR

Notes: 1: Starting T 2: Pulse Width = 100s

Source to Drain Diode Voltage Reverse Recovery Time ISD = 61A, dISD/dt = 100A/µs- -62ns

Reverse Recovered Charge ISD = 61A, dISD/dt = 100A/µs- -45nC

= 25°C, L = 0.228mH, IAS = 40A.

J

SD

= 30A - - 1.0 V

I

SD

FDB3652 / FDP3652 / FDI3652

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

75

50

25

, DRAIN CURRENT (A)

D

I

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES: DUTY FACTOR: D = t PEAK TJ = PDM x Z

-1

10

θJC

10

1/t2

0

x R

θJC

t

+ T

1

t

2

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

1000

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

VGS = 10V

, PEAK CURRENT (A)

DM

I

100

50

-5

10

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

FDB3652 / FDP3652 / FDI3652

Typical Characteristics T

1000

100

10

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

, DRAIN CURRENT (A)

D

I

1

SINGLE PULSE

TJ = MAX RATED T

= 25oC

C

0.1 110100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

= 25°C unless otherwise noted

C

10µs

100µs

1ms

10ms

DC

Figure 5. Forward Bias Safe Operating Area

125

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V

= 15V

DD

100

75

TJ = 175oC

50

, DRAIN CURRENT (A)

D

I

TJ = 25oC

25

0

34567

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

500

If R = 0

200

tAV = (L)(IAS)/(1.3*RATED BV If R ¼ 0

t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

100

10

, AVALANCHE CURRENT (A)

AS

STARTING TJ = 150oC

I

1

0.01

0.1 1 10

tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

STARTING TJ = 25oC

- VDD) +1]

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

125

VGS = 7VVGS = 10V

100

75

50

, DRAIN CURRENT (A)

D

I

25

VGS = 5V

0

01234

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

VGS = 6V

TC = 25oC

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

20

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

18

16

14

DRAIN TO SOURCE ON RESISTANCE(mΩ)

12

0 204060

VGS = 6V

VGS = 10V

I

, DRAIN CURRENT (A)

D

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

3.0

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

2.5

2.0

1.5

ON RESISTANCE

1.0

0.5

NORMALIZED DRAIN TO SOURCE

0

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 61A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

Fairchild FDB3652, FDP3652, FDI3652 service manual

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