Fairchild FDB33N25, FDI33N25 service manual
FDB33N25 / FDI33N25
250V N-Channel MOSFET
FDB33N25 / FDI33N25 250V N-Channel MOSFET
May 2006
TM
UniFET
Features
• 33A, 250V, R
• Low gate charge ( typical 36.8 nC)
•Low C
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
( typical 39 pF)
rss
= 0.094Ω @VGS = 10 V
DS(on)
GS
D2-PAK
FDB Series
D
GSD
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
I2-PAK
FDI Series
S
Absolute Maximum Ratings
Symbol Parameter FDB33N25 / FDI33N25 Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
T
J, TSTG
T
L
Drain-Source Voltage 250 V
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source voltage ±30 V
Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 33 A
Repetitive Avalanche Energy (Note 1) 23.5 mJ
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
33
20.4
132 A
918 mJ
235
1.89
300 °C
W/°C
A
A
W
Thermal Characteristics
Symbol Parameter Min. Max. Unit
R
θJC
R
* Thermal Resistance, Junction-to-Ambient* -- 40 °C/W
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDB33N25 / FDI33N25 Rev A
Thermal Resistance, Junction-to-Case -- 0.53 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Widt h Quantity
FDB33N25 FDB33N25TM D2-PAK 330mm 24mm 800
FDI33N25 FDI33N25TU I2-PAK - - 50
FDB33N25 / FDI33N25 250V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Typ. Max Units
Off Characteristics
BV
DSS
ΔBV
/ ΔT
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 250 -- -- V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V
ID = 250μA, Referenced to 25°C -- 0.25 -- V/°C
VDS = 200V, TC = 125°C
--
--
--
--
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 40V, ID =16.5A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 330 430 pF
VGS = 10V, ID = 16.5A -- 0.077 0.094 Ω
(Note 4)
-- 26.6 -- S
-- 1640 2135 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 39 59 pF
Turn-O n Delay Time VDD = 125V, ID = 33A
Turn-O n Ris e Ti me -- 230 470 ns
RG = 25Ω
-- 35 80 ns
Turn-O ff Delay Time -- 75 160 ns
Turn-O ff Fall Time -- 120 250 ns
Total Gate Charge VDS = 200V, ID = 33A
Gate-Source Charge -- 10 -- nC
VGS = 10V
Gate-Drain Charge -- 17 -- nC
(Note 4, 5)
-- 36.8 48 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 33 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 132 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 33A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 33A
Reverse Recovery Charge -- 1.71 -- μC
dIF/dt =100A/μs (Note 4)
-- 220 -- ns
10
1
μA
μA
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.35mH, IAS = 33A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 33A, di/dt ≤ 200A/μs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
, Starting TJ = 25°C
DSS
FDB33N25 / FDI33N25 Rev A
2 www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
FDB33N25 / FDI33N25 250V N-Channel MOSFET
10
10
, Drain Current [A]
D
I
10
2
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
0
-1
10
GS
0
10
VDS, Drain-Source Voltage [V]
2
10
1
10
, Drain Current [A]
D
I
10
150oC
25oC
0
24681012
* Notes :
1. 250μs Pulse Test
2. T
= 25oC
C
1
10
VGS, Gate-Source Voltage [V]
-55oC
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
0.25
0.20
VGS = 10V
0.15
[Ω],
DS(ON)
0.10
R
VGS = 20V
0.05
Drain-Source On-Resistance
0.00
0 20406080100
* Note : TJ = 25oC
ID, Drain Current [A]
2
10
1
10
, Reverse Drain Current [A]
DR
I
0
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
150oC
VSD, Source-Drain voltage [V]
25oC
* Notes :
1. VDS = 40V
2. 250
μs Pulse Test
* Notes :
1. V
= 0V
GS
μs Pulse Test
2. 250
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
4000
3000
2000
Capacitances [pF]
1000
0
-1
10
FDB33N25 / FDI33N25 Rev A
C
oss
C
iss
C
rss
0
10
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
* Note ;
1. V
2. f = 1 MHz
1
10
12
10
8
6
VDS = 50V
VDS = 125V
VDS = 200V
4
= 0 V
GS
, Gate-Source Voltage [V]
2
GS
V
0
0 10203040
* Note : ID = 33A
QG, Total Gate Charge [nC]
3 www.fairchildsemi.com
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