Fairchild FDB2532, FDP2532, FDI2532 service manual

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FDB2532 / FDP2532 / FDI2532

N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ

FDB2532 / FDP2532 / FDI2532

August 2002

Features

•r

•Q

• Low Miller Charge

•Low Q

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82884

= 14mΩ (Typ.), V

DS(ON)

(tot) = 82nC (Typ.), V

g

Body Diode

RR

= 10V, ID = 33A

GS

= 10V

GS

Applications

• DC/DC converters and Off-Line UPS

• Distributed Pow er Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• High Voltage Synchronous Re ctifier

• Direct Injection / Diesel Injection Systems

• 42V Automotive Lo ad Control

• Electronic Valve T rain System s

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

GATE

SOURCE

TO-220AB

FDPSERIES

MOSFET Maximum Ratings T

DRAIN

(FLANGE)

TO-263AB

FDB SERIES

= 25°C unless otherwise noted

C

DRAIN

(FLANGE)

SOURCE

TO-262AB

FDISERIES

DRAIN

GATE

G

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 150 V Gate to Source Voltage ±20 V Drain Curr e nt Continuous (T

I

D

Continuous (T Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 10V) 56 A

C

= 25oC, VGS = 10V, R

amb

= 43oC/W) 8 A

θJA

79 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 400 mJ Power dissipation 310 W

o

Derate above 25

C2.07W/

Operating and Storage Temperature -55 to 175

D

S

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

This product ha s been des igned to me et the e xtr eme test c ondit ions and envir onment deman ded by the automot ive indus t ry. For a

All Fairchild Semiconductor prod ucts are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

Thermal Resistance Junction t o Case TO-220, TO-263, TO -262 0.48 Thermal Resistance Junction t o Ambient TO-220, TO-262 (Note 2) 62 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad ar ea 43

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

certification.

FDB2532 / FDP2532 / FDI2532 Rev. B

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB2532 FDB2532 TO-263AB 330mm 24mm 800 units FDP2532 FDP2532 TO-220AB Tube N/A 50 units

FDI2532 FDI2532 TO-262AB Tube N/A 50 units

FDB2532 / FDP2532 / FDI2532

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain t o Source Breakdown Volta ge ID = 250µA, VGS = 0V 150 - - V

V

= 120V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

= 33A, VGS = 10V - 0.014 0.016

I

D

I

= 16A, VGS = 6V, - 0.016 0.024

Drain to Source On Resistance

D

= 33A, VGS = 10V,

I

D

T

= 175oC

C

- 0.040 0.048

Dynamic Characteristics

C C C Q Q Q Q Q

ISS OSS RSS

g(TOT) g(TH) gs gs2 gd

Input Capacitance Output Capacitance - 615 - pF Reverse Transfer Capacitance - 135 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total G ate Ch arg e at 10 V VGS = 0V to 10V Threshold Gate Charge VGS = 0V to 2V - 11 14 nC Gate to Source Gate Charge - 23 - nC Gate Charge Threshold to Plateau - 13 - nC

V

DD

I

= 33A

D

I

= 1.0m A

g

= 75V

Gate to Drain “Miller” Charge - 19 - nC

-5870- pF

-82107nC

µA

Ω

Resistive Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 16 - ns Rise Time - 30 - ns T u rn-Off Delay Time - 39 - ns Fall Time - 17 - ns Turn-Off Time - - 84 ns

(VGS = 10V)

V

DD

V

GS

--69ns

= 75V, ID = 33A = 10V, RGS = 3.6Ω

Drain-Source Diode Characteristics

I

= 33A - - 1 .25 V

V

SD

t

rr

Q

RR

Notes: 1: Starting T 2: Pulse Width = 100s

Source to Drain Di ode Voltage Reverse Recovery Time ISD = 33A, dISD/dt= 100A/µs- - 105ns

Reverse Recovery Charge ISD = 33A, dISD/dt= 100A/µs - - 327 nC

= 25°C, L = 0.5 mH, IAS = 40A.

J

SD

= 16A - - 1.0 V

I

SD

FDB2532 / FDP2532 / FDI2532

Typical Characteristics T

= 25°C unless otherwise noted

A

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2.0 DUTY CYCLE - DESCENDING ORDER

0.5

1.0

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

125

V

= 10V

GS

100

75

50

, DRAIN CURRENT (A)

D

I

25

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

10-1 10

θJC

1/t2

0

x R

t

θJC

1

t

2

+ T

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

, PEAK CURRENT (A)

DM

I

2000

1000

100

50

VGS = 10V

-5

10

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

0

10

C

150

1

10

Figure 4. Peak Current Capability

Typical Characteristics T

= 25°C unl ess otherwise noted

A

FDB2532 / FDP2532 / FDI2532

1000

100

OPERATION IN THIS

10

, DRAIN CURRENT (A)

D

I

1

0.1

AREA MAY BE

LIMITED BY r

SINGLE PULSE TJ = MAX RATED

T

= 25oC

C

1 10 100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

10µs

100µs

1ms

10ms

DC

Figure 5. Forward Bias Safe Operating Area

180

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

150

V

= 15V

DD

120

90

60

, DRAIN CURRENT (A)

D

I

30

0

TJ = 25oC

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 175oC

TJ = -55oC

200

STARTING TJ = 25oC

STARTING TJ = 150oC

- VDD)

DSS

= (L/R)ln[(IAS*R)/(1.3*RATED BV

tAV, TIME IN AVALANCHE (ms)

DSS

300

100

10

If R = 0

, AVALANCHE CURRENT (A)

tAV = (L)(IAS)/(1.3*RATED BV

AS

I

If R ≠ 0 t

AV

1

0.001 0.01 0.1 1

NOTE: Refer to Fairchild Application Notes AN7515 and AN7517

Figure 6. Unclamped Inductive Switching

Capability

180

150

120

90

60

, DRAIN CURRENT (A)

D

I

30

0

0.0 1.0 2.0 3.0 4.0 5.0 6.0

VGS = 10V

VGS = 5V

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 7V

VGS = 6V

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

- VDD) +1]

TC = 25oC

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

18

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

17

16

15

14

13

DRAIN TO SOURCE ON RESISTANCE (m Ω)

VGS = 6V

VGS = 10V

0 20406080

I

, DRAIN CURRENT (A)

D

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

3.0

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

2.5

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID =33A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature