Fairchild FDI150N10 service manual
tm
FDI150N10
D
G
S
TO-262
FDI Series
GSD
N-Channel PowerTrench® MOSFET
100V, 57A, 16m
FDI150N10 N-Channel PowerTrench
October 2009
Features
•R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handling capability
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt (Note 3) 7.5 V/ns
P
D
, T
T
J
T
L
= 12m ( Typ.) @ VGS = 10V, ID = 49A
DS(on)
DS(on)
o
= 25
C unless otherwise noted
C
Symbol Parameter Ratings Units
Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
-Continuous (T
-Continuous (T
(T
= 25oC) 110 W
C
- Derate above 25
STG
Drain Current
Drain Current - Pulsed (Note 1) 228 A
Single Pulsed Avalanche Energy (Note 2) 132 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
= 25oC) 57 A
C
= 100oC) 40 A
C
o
C0.88W/
300
o
o
®
MOSFET
o
C
C
C
Thermal Characteristics
Symbol Parameter Ratings Units
R
JC
CS
R
JA
©2009 Fairchild Semiconductor Corporation
FDI150N10 Rev. A1
Thermal Resistance, Junction to Case 1.13
Thermal Resistance, Case to Sink Typ. 0.5
Thermal Resistance, Junction to Ambient 62.5
o
C/WR
www.fairchildsemi.com1
FDI150N10 N-Channel PowerTrench
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDI150N10 FDI150N10 TO-262 - - 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Drain to Source Breakdown Voltage ID = 250A, VGS = 0V, TC= 25oC 100 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V
I
= 250A, Referenced to 25oC-0.1-V/
D
V
= 100V, V
DS
= 100V, V
V
DS
= 0V - - 1
GS
= 0V, TC = 150oC - - 500
GS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250A2.5-4.5V
Static Drain to Source On Resistance VGS = 10V, ID = 49A - 12 16 m
Forward Transconductance VDS = 20V , ID = 49A (Note 4) - 156 - S
Input Capacitance
Output Capacitance - 340 450 pF
Reverse Transfer Capacitance - 140 210 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
- 3580 4760 pF
A
o
C
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g(tot)
gs
gd
Turn-On Delay Time
Turn-On Rise Time - 164 338 ns
Turn-Off Delay Time - 86 182 ns
Turn-Off Fall Time - 83 176 ns
Total Gate Charge at 10V
Gate to Source Gate Charge - 19 - nC
Gate to Drain “Miller” Charge - 15 - nC
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.11mH, I
3: I
49A, di/dt 200A/s, VDD BV
SD
4: Pulse Test: Pulse width 300s, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 57 A
Maximum Pulsed Drain to Source Diode Forward Current - - 228 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 70 - nC
= 49A, VDD = 50V, RG = 25, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 50V, ID = 49A
V
DD
V
= 10V, R
GS
(Note 4, 5)
V
= 80V, ID = 49A
DS
V
= 10V
GS
(Note 4, 5)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/s (Note 4)
F
= 25
GEN
= 49A - - 1.3 V
SD
= 49A
SD
- 47 104 ns
-5369nC
-41-ns
FDI150N10 Rev. A1
2
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Typical Performance Characteristics
0.1 1 10
10
100
0.02
*Notes:
1. 250
s Pulse Test
2. T
C
= 25oC
V
GS
= 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
VDS,Drain-Source Voltage[V]
I
D
,Drain Current[A]
500
2
345678
1
10
100
1000
25oC
-55oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
s Pulse Test
VGS,Gate-Source Voltage[V]
I
D
,Drain Current[A]
0.20.40.60.81.01.21.41.6
1
10
100
*Notes:
1. VGS = 0V
2. 250
s Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V ]
25oC
500
0 100 200 300
5
10
15
20
25
30
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[m],
Drain-Source On-Resistance
ID, Drain Current [A]
0 102030405060
0
2
4
6
8
10
*Note: ID = 49A
VDS = 25V
V
DS
= 50V
V
DS
= 80V
V
GS
, Gate-Source Voltage [V]
Qg, Total Ga te C harge [nC]
0.1 1 10
0
1000
2000
3000
4000
5000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V ]
30
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDI150N10 N-Channel PowerTrench
®
MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDI150N10 Rev. A1
3
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