Fairchild FDP047AN08A0, FDI047AN08A0, FDH047AN08A0 service manual
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
N-Channel PowerTrench® MOSFET
75V, 80A, 4.7mΩ
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
June 2004
Features
•r
•Q
• Low Miller Charge
•Low Q
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82684
DRAIN
(FLANGE)
MOSFET Maximum Ratings T
= 4.0mΩ (Typ.), V
DS(ON)
(tot) = 92nC (Typ.), V
g
Body Diode
RR
TO-220AB
FDP SERIES
GS
GATE
GS
= 10V
SOURCE
DRAIN
= 10V, ID = 80A
DRAIN
(FLANGE)
C
SOURCE
TO-262AB
FDI SERIES
= 25°C unless otherwise noted
Applications
• 42V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• Electronic Valve Train Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V systems
SOURCE
DRAIN
GATE
TO-24 7
FDH SERIES
DRAIN
DRAIN
(
FLANGE
GATE
G
)
Symbol Parameter Ratings Units
V
DSS
V
GS
Drain to Source Voltage 75 V
Gate to Source Voltage ±20 V
Drain Current
I
D
Continuous (T
Continuous (T
< 144oC, VGS = 10V)
C
= 25oC, VGS = 10V, with R
C
= 62oC/W) 15 A
θJA
80 A
Pulsed Figure 4 A
E
AS
P
D
, T
T
J
STG
Single Pulse Avalanche Energy (Note 1) 475 mJ
Power dissipation 310 W
o
Derate above 25
C2.0W/
Operating and Storage Temperature -55 to 175
D
S
o
C
o
C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
©2004 Fairchild Semiconductor Corporation
Thermal Resistance Junction to Case TO-220, TO-262, TO-247 0.48
Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) 62
Thermal Resistance Junction to Ambient TO-247 (Note 2) 30
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
certification.
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP047AN08A0 FDP047AN08A0 TO-220AB Tube N/A 50 units
FDI047AN08A0 FDI047AN08A0 TO-262AB Tube N/A 50 units
FDH047AN08A0 FDH047AN08A0 TO-247 Tube N/A 30 units
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
I
DSS
I
GSS
VDSS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 75 - - V
V
= 60V - - 1
Zero Gate Voltage Drain Current
DS
= 0V TC = 150oC - - 250
V
GS
Gate to Source Leakage Current VGS = ±20V - - ±100 nA
On Characteristics
V
GS(TH)
r
DS(ON)
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V
= 80A, VGS = 10V - 0.0040 0.0047
I
D
I
= 37A, VGS = 6V - 0.0058 0.0087
Drain to Source On Resistance
D
= 80A, VGS = 10V,
I
D
T
= 175oC
J
- 0.0082 0.011
Dynamic Characteristics
C
C
C
Q
Q
Q
Q
Q
ISS
OSS
RSS
g(TOT)
g(TH)
gs
gs2
gd
Input Capacitance
Output Capacitance - 1000 - pF
Reverse Transfer Capacitance - 240 - pF
= 25V, VGS = 0V,
V
DS
f = 1MHz
Total Gate Charge at 10V VGS = 0V to 10V
Threshold Gate Charge VGS = 0V to 2V - 11 17 nC
Gate to Source Gate Charge - 27 - nC
Gate Charge Threshold to Plateau - 16 - nC
V
DD
= 80A
I
D
= 1.0mA
I
g
= 40V
Gate to Drain “Miller” Charge - 21 - nC
- 6600 - pF
92 138 nC
µA
Ω
Switching Characteristics
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Tur n -O n T i m e
Turn-On Delay Time - 18 - ns
Rise Time - 88 - ns
Turn-Off Delay Time - 40 - ns
Fall Time - 45 - ns
Turn-Off Time - - 128 ns
(VGS = 10V)
= 40V, ID = 80A
V
DD
= 10V, RGS = 3.3Ω
V
GS
- - 160 ns
Drain-Source Diode Characteristics
I
= 80A - - 1.25 V
V
SD
t
rr
Q
RR
Notes:
1: Starting TJ = 25°C, L = 0.232mH, IAS = 64A.
2: Pulse Width = 100s
©2004 Fairchild Semiconductor Corporation FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C
Source to Drain Diode Voltage
Reverse Recovery Time ISD = 75A, dISD/dt = 100A/µs- -53ns
Reverse Recovered Charge ISD = 75A, dISD/dt = 100A/µs- -54nC
SD
= 40A - - 1.0 V
I
SD
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
Typical Characteristics T
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 175
TC, CASE TEMPERATURE (oC)
= 25°C unless otherwise noted
C
150
125
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
θJC
Z
THERMAL IMPEDANCE
0.01
-5
10
SINGLE PULSE
-4
10
-3
10
t, RECTANGULAR PULSE DURATION (s)
200
CURRENT LIMITED
160
120
80
, DRAIN CURRENT (A)
D
I
40
0
25 50 75 100 125 150 175
BY PACKAGE
TC, CASE TEMPERATURE (oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
P
DM
t
1
t
x R
2
2
+ T
θJC
C
1
10
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
-2
10
-1
10
θJC
10
0
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
1000
VGS = 10V
, PEAK CURRENT (A)
DM
I
100
50
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-5
-4
10
-3
10
-2
10
t, PULSE WIDTH (s)
-1
10
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
I = I
25
10
C
150
0
1
10
Figure 4. Peak Current Capability
©2004 Fairchild Semiconductor Corporation FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C
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