Fairchild FDI040N06 service manual
FDI040N06
N-Channel PowerTrench® MOSFET
60V, 168A, 4.0mΩ
FDI040N06 N-Channel PowerTrench
November 2009
Features
•R
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
• High Power and Current Handling Capability
• RoHS Compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns
P
D
, T
T
J
T
L
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
= 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A
DS(on)
R
DS(on)
GSD
Symbol Parameter Ratings Units
Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
Drain Current
Drain Current - Pulsed (Note 1) 672 A
Single Pulsed Avalanche Energy (Note 2) 872 mJ
Power Dissipation
STG
Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
I2-PAK
FDI Series
o
= 25
C unless otherwise noted
C
-Continuous (T
-Continuous (T
(T
= 25oC) 231 W
C
- Derate above 25
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
G
S
= 25oC, Silicion Limited) 168*
C
= 100oC, Silicion Limited) 118*
C
= 25oC, Package Limited) 120
C
o
C1.54W/
300
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
R
θJA
Thermal Resistance, Junction to Case 0.65
Thermal Resistance, Junction to Ambient 62.5
o
A-Continuous (T
o
o
C
o
C
C/W
®
MOSFET
C
©2009 Fairchild Semiconductor Corporation
FDI040N06 Rev. A1
www.fairchildsemi.com1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDI040N06 FDI040N06 TO-262 Tube - 50
FDI040N06 N-Channel PowerTrench
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC= 25oC60 - -V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V
I
= 250µA, Referenced to 25oC - 0.04 - V/oC
D
V
DS
V
DS
= 60V, V
= 60V, V
= 0V - - 1
GS
= 0V, TC = 150oC - - 500
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250µA2.53.54.5V
Static Drain to Source On Resistance VGS = 10V, ID = 75A - 3.2 4.0 mΩ
Forward Transconductance VDS = 10V , ID = 75A (Note 4) - 169 - S
Dynamic Characteristics
C
C
C
Q
Q
Q
iss
oss
rss
g(tot)
gs
gd
Input Capacitance
Output Capacitance - 900 1195 pF
Reverse Transfer Capacitance - 385 580 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 32 - nC
Gate to Drain “Miller” Charge - 32 - nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 40 90 ns
Turn-Off Delay Time - 55 120 ns
Turn-Off Fall Time - 24 58 ns
= 25V, VGS = 0V
V
DS
f = 1MHz
V
= 48V, ID = 75A
DS
V
= 10V
GS
(Note 4, 5)
= 30V, ID = 75A
V
DD
V
= 10V, R
GS
(Note 4, 5)
GEN
= 4.7Ω
- 6190 8235 pF
- 102 133 nC
-3070ns
µA
®
MOSFET
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.31mH, I
3: I
≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BV
SD
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDI040N06 Rev. A1
Maximum Continuous Drain to Source Diode Forward Current - - 168 A
Maximum Pulsed Drain to Source Diode Forward Current - - 672 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 47 - nC
= 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/µs (Note 4)
F
= 75A - - 1.3 V
SD
= 75A
SD
2
-41-ns
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
1000
V
= 15.0V
GS
10.0V
8.0 V
7.0 V
100
6.5 V
6.0 V
5.5 V
10
,Drain Current[A]
D
I
1
0.1
0.01 0.1 1
*Notes:
1. 250
2. T
µs Pulse Test
= 25oC
C
6
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
4.0
1000
*Notes:
1. V
= 10V
DS
µs Pulse Test
2. 250
100
175oC
10
,Drain Current[A]
D
I
1
2345678
25oC
-55oC
VGS,Gate-Source Voltage[V]
1000
FDI040N06 N-Channel PowerTrench
®
MOSFET
3.5
VGS = 10V
[mΩ],
DS(ON)
3.0
R
VGS = 20V
Drain-Source On-Resistance
2.5
0 60 120 180 240 300 360
*Note: TC = 25oC
ID, Drain Current [A]
100
10
, Reverse Drain Current [A]
S
I
1
0.20.40.60.81.01.2
VSD, Body Diode Forward Voltage [V]
175oC
25oC
*Notes:
1. VGS = 0V
2. 250
µs Pulse Test
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10000
1000
*Note:
1. V
= 0V
GS
Capacitances [pF]
2. f = 1MH z
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
C
rss
100
0.1 1 10
= C
gd
gd
VDS, Drain-Source Voltage [V]
C
iss
C
oss
C
rss
30
10
VDS = 12V
V
8
= 30V
DS
= 48V
V
DS
6
4
, Gate-Source Voltage [V]
GS
V
2
0
0 20406080100120
*Note: ID = 75A
Qg, Total Ga te C harge [nC]
FDI040N06 Rev. A1
3
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