Fairchild FDP038AN06A0, FDI038AN06A0 service manual

FDP038AN06A0 / FDI038AN06A0

N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ

FDP038AN06A0 / FDI038AN06A0

December 2010

Features

•r

•Q

• Low Miller Charge

•Low Q

• UIS Capability (Single Pulse and Repetitive Pulse)

= 3.5mΩ (Typ.), V

DS(ON)

(tot) = 95nC (Typ.), V

g

Body Diode

RR

= 10V, ID = 80A

GS

= 10V

GS

Applications

• Motor / Body Load Control

•ABS Systems

• Powertrain Management

• Injection Systems

• DC-DC converters and Off-line UPS

• Distributed Power Architectures and VRMs

Formerly developme ntal type 82584

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

TO-220AB

FDP SERIES

MOSFET Maximum Ratings T

DRAIN

(FLANGE)

= 25°C unless otherwise noted

C

• Primary Switch for 12V and 24V systems

SOURCE

TO-262AB

FDI SERIES

DRAIN

GATE

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 60 V Gate to Source Voltage ±20 V Drain Current

I

D

Continuous (T Continuous (T

< 151oC, VGS = 10V)

C

= 25oC, VGS = 10V, with R

amb

= 62oC/W) 17 A

θJA

80 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 625 mJ Power dissipation 310 W

o

Derate above 25

C2.07W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance Junction to Case TO-220, TO-262 0.48 Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) 62

o

C/W

o

C/W

FDP038AN06A0 / FDI038AN06A0 Rev. B2

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP038AN06A0 FDP038AN06A0 TO-220AB Tube N/A 50 units

FDI038AN06A0 FDI038AN06A0 TO-262AB Tube N/A 50 units

FDP038AN06A0 / FDI038AN06A0

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Tes t Cond itions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain to Source Breakdown Volt age ID = 250µA, VGS = 0V 60 - - V

V

= 50V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC - - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

= 80A, VGS = 10V - 0.0035 0.0038

I

D

I

= 40A, VGS = 6V - 0.0049 0.0074

Drain to Source On Resistance

D

= 80A, VGS = 10V,

I

D

T

= 175oC

J

- 0.0071 0.0078

Dynamic Characteristics

C C C Q Q Q Q Q

ISS OSS RSS

g(TOT) g(TH) gs gs2 gd

Input Capacitance Output Capacitance - 1123 - pF Reverse Transfer Capacitance - 367 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V Threshold Gate Charge VGS = 0V to 2V - 12 15 nC Gate to Source Gate Charge - 26 - nC Gate Charge Threshold to Plateau - 15 - nC

V

DD

= 80A

I

D

= 1.0mA

I

g

= 30V

Gate to Drain “Miller” Charge - 27 - nC

- 6400 - pF

96 124 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 17 - ns Rise Time - 144 - ns Tur n-Off Delay Time - 34 - ns Fall Time - 60 - n s Turn-Off Time - - 115 ns

(VGS = 10V)

= 30V, ID = 80A

V

DD

= 10V, RGS = 2.4Ω

V

GS

- - 175 ns

Drain-Source Diode Characteristics

I

= 80A - - 1.25 V

V

SD

t

rr

Q

RR

Notes: 1: Starting T 2: Pulse Width = 100s

Source to Drain Diode Voltage Reverse Recovery Time ISD = 75A, dISD/dt = 100A/µs- -38ns

Reverse Recovered Charge ISD = 75A, dISD/dt = 100A/µs- -39nC

= 25°C, L = 0.255mH, IAS = 70A.

J

SD

= 40A - - 1.0 V

I

SD

FDP038AN06A0 / FDI038AN06A0

Typical Characteristics T

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

= 25°C unless otherwise noted

C

125

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

250

200

150

100

, DRAIN CURRENT (A)

D

I

50

0

150

25 50 75 100 125 150 175

Figure 2. Maximum Contin uous Drain Current vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

CURRENT LIMITED BY PACKAGE

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

1/t2

θJC

0

10

x R

θJC

t

+ T

1

t

2

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

3000

TRANSCONDUCTANCE MAY LIMIT CURRENT

-4

IN THIS REGION

-3

10

-2

10

t, PULSE WIDT H (s)

-1

10

1000

VGS = 10V

100

, PEAK CURRENT (A)

DM

I

10

-5

10

TC = 25oC FOR TEMPERATURES

o

ABOVE 25 CURRENT AS FOLLOWS:

I = I

25

C DERATE PEAK

175 - T

150

0

10

C

1

10

Figure 4. Peak Current Capability

FDP038AN06A0 / FDI038AN06A0

Typical Characteristics T

2000 1000

100

OPERATION IN THIS

AREA MAY BE

10

LIMITED BY r

, DRAIN CURRENT (A)

D

I

1

SINGLE PULSE TJ = MAX RATED

T

= 25oC

C

0.1 110100

Figure 5. Forward Bias Safe Operating Area

160

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

V

DD

120

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

= 15V

= 25°C unless otherwise noted

C

10µs

100µs

1ms

10ms

DC

NOTE: Refer to Fairchild Applica tion N ote s AN7514 and AN7515

100

STARTING TJ = 25oC

STARTING TJ = 150oC

10

, AVALANCHE CURRENT (A) I

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

AS

If R ≠ 0 t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

1

0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms)

DSS

- VDD)

DSS

- VDD) +1]

Figure 6. Unclamped Inductive Switching

Capability

160

120

VGS = 20V

VGS = 6V

VGS = 10V

VGS = 5V

80

, DRAIN CURRENT (A)

D

I

40

0

3.0 3.5 4.0 4.5 5.0 5.5 6

TJ = 175oC

TJ = 25oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 7. Transfer Ch aracteri stics Figur e 8. Satura tion Characteristics

6

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

5

4

DRAIN TO SOURCE ON RESISTANCE(mΩ)

3

0 20406080

, DRAIN CURRENT (A)

I

D

VGS = 6V

VGS = 10V

Figure 9. Drain to Sour ce On Resistan ce vs Drain

Current

80

, DRAIN CURRENT (A)

D

I

40

PULSE DURATION = 80µs

0

0 0.5 1.0 1.5

2.5

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200

DUTY CYCLE = 0.5% MAX

VDS, DRAIN TO SOURCE VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (oC)

TC = 25oC

VGS = 10V, ID =80A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

FDP038AN06A0 / FDI038AN06A0

Typical Characteristics T

1.4

1.2

1.0

0.8

0.6

NORMALIZED GATE

THRESHOLD VOLTAGE

0.4

0.2

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

= 25°C unless otherwise noted

C

VGS = VDS, ID = 250µA

Figure 11. Normalized Gate Thresho ld Voltage vs

Junction Temperature

10000

C

= CGS + C

C

≅ C

+ C

OSS

DS

GD

1000

C, CAPACITANCE (pF)

C

= C

RSS

GD

V

= 0V, f = 1MHz

GS

100

0.1 1 10 60 VDS, DRAIN TO SOURCE VOLTAGE (V)

ISS

GD

1.2 ID = 250µA

1.1

1.0

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.9

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

10

VDD = 30V

8

6

4

WAVEFORMS IN

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

0 255075100

Qg, GATE CHARGE (nC)

DESCENDING ORDER:

ID = 80A I

= 40A

D

Figure 13. Capacitance vs Drain to Source

Voltage

Figure 14. Gate Charge Waveforms for Constant

Gate Current

Test Circuits and Waveforms

V

DS

L

TO OBTAIN

VARY t

P

REQUIRED PEAK I

V

GS

R

AS

G

+

V

DD

-

I

AS

DUT

t

0V

P

I

AS

0.01Ω

0

Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms

BV

DSS

t

P

t

AV

FDP038AN06A0 / FDI038AN06A0

V

DS

V

DD

V

DS

I

g(REF)

V

DD

L

V

GS

DUT

+

V

DD

-

V

GS

0

I

g(REF)

= 2V

Q

gs2

Q

g(TH)

Q

gs

Q

g(TOT)

V

DS

Q

gd

V

0

Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveforms

V

DS

R

L

V

GS

R

GS

V

GS

DUT

+

V

DD

-

V

DS

0

V

GS

10%

0

t

d(ON)

90%

t

ON

50%

10%

t

r

PULSE WIDTH

GS

t

d(OFF)

V

= 10V

GS

t

OFF

t

f

90%

10%

90%

50%

Figure 19. Switching Time Test Circuit Figure 20. Switching Time Waveforms

PSPICE Electrical Model

.SUBCKT FDP038AN06A0 2 1 3 ; rev July 04, 2002 Ca 12 8 1.5e-9 Cb 15 14 1.5e-9 Cin 6 8 6.1e-9

Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD

Ebreak 11 7 17 18 69.3 Eds 14 8 5 8 1 Egs 13 8 6 8 1 Esg 6 10 6 8 1 Evthres 6 21 19 8 1 Evtemp 20 6 18 22 1

It 8 17 1 Lgate 1 9 4.81e-9

Ldrain 2 5 1.0e-9 Lsource 3 7 4.63 e -9

RLgate 1 9 48.1 RLdrain 2 5 10 RLsource 3 7 46.3

Mmed 16 6 8 8 MmedMOD Mstro 16 6 8 8 MstroMOD Mweak 16 21 8 8 MweakMOD

Rbreak 17 18 RbreakMOD 1 Rdrain 50 16 RdrainMOD 1e-4 Rgate 9 20 1.36 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 Rsource 8 7 RsourceMOD 2.8e-3 Rvthres 22 8 RvthresMOD 1 Rvtemp 18 19 RvtempMOD 1 S1a 6 12 13 8 S1AMOD S1b 13 12 13 8 S1BMOD S2a 6 15 14 13 S2AMOD S2b 13 15 14 13 S2BMOD

GATE

1

LGATE

RLGATE

RGATE

9

CA

ESG

+

EVTEMP +

-

18 22

20

S1A

12

13

8

S1B

EGS EDS

-

13

6 8

10

RSLC2

6

14 13

+

6 8

-

DPLCAP

EVTHRES

+

S2A

S2B

5

RSLC1

51

+

5

51

50

RDRAIN

21

-

19

8

MSTRO

CIN

15

CB

14

+

5 8

-

ESLC

16

8

MMED

8

DBREAK

11

+

17

EBREAK

IT

18

-

MWEAK

RSOURCE

RBREAK

17 18

RVTHRES

7

+

RVTEMP 19

-

22

LDRAIN

RLDRAIN

DBODY

LSOURCE

RLSOURCE

VBAT

DRAIN

2

SOURCE

3

FDP038AN06A0 / FDI038AN06A0

Vbat 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*250),10))} .MODEL DbodyMOD D (IS=2.4E-11 N=1.04 RS=1.65e-3 TRS1=2.7e-3 TRS2=2e-7

+ CJO=4.35e-9 M=5.4e-1 TT=1e-9 XTI=3.9) .MODEL DbreakMOD D (RS=1.5e-1 TRS1=1e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=1. 7e-9 IS=1e-30 N =1 0 M=0.47)

.MODEL MmedMOD NMOS (VTO=3.3 KP=9 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.36 T_abs=25) .MODEL MstroMOD NMOS (VTO=4.00 KP=275 IS=1e-30 N=10 TOX=1 L=1u W=1u T_abs=25) .MODEL MweakMOD NMOS (VTO=2.72 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=13.6 RS=0.1 T_abs=25)

.MODEL RbreakMOD RES (TC1=9e-4 TC2=-9e-7) .MODEL RdrainMOD RES (TC1=4e-2 TC2=3e-4 ) .MODEL RSLCMOD RES (TC1=1e -3 TC2=1e-5) .MODEL RsourceMOD RES (TC1=5e-3 TC2=1e-6) .MODEL RvthresMOD RES (TC1=-6.7e-3 TC2=-1.5e-5) .MODEL RvtempMOD RES (TC1=- 2.5e-3 TC2=1e-6)

.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-1.5) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=-4) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1 VOFF=0.5) .MODEL S2BMOD VSW ITCH (RON=1e-5 ROFF=0.1 VON=0.5 VOFF=-1) .ENDS

Note: For further disc ussio n of the PSPI CE model, c onsult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.

SABER Electrical Model

rev July 4, 2002 template FDP038AN06A0 n2,n1,n3 = m_temp electrical n2,n1, n3 number m_temp=25 { var i iscl dp..model dbodymod = (isl=2.4e-11,nl=1.04,rs=1.65e-3,trs1=2.7e-3,trs2=2e-7,cjo=4.35e-9,m=5.4e-1,tt=1e-9,xti=3.9) dp..model dbreakmod = (rs=1.5e-1,trs1=1e-3,trs2=-8.9e-6) dp..model dplcapmod = (cjo=1.7e-9,isl=10e-30,nl=10,m=0.47) m..model mmedmod = (type=_n,vto=3.3,kp=9,is=1e-30, tox=1) m..model mstrong mod = (type=_n,vto=4.00,kp=275,is= 1e-30, tox=1) m..model mweakmod = (type=_n,vto=2.72,kp=0.03,is=1e-30, tox=1,rs=0.1) sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-1.5) sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-1.5,voff=-4) sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1,voff=0.5) sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.5,voff=-1) c.ca n12 n8 = 1.5e-9 c.cb n15 n14 = 1.5e-9 c.cin n6 n8 = 6.1e-9

dp.dbody n7 n5 = model=dbodymod dp.dbreak n5 n11 = model=dbreakmod dp.dplcap n10 n5 = model=dplcapmod

spe.ebreak n11 n7 n17 n18 = 69.3

GATE

spe.eds n14 n8 n5 n8 = 1 spe.egs n13 n8 n6 n8 = 1

LGATE

1

9

RLGATE

RGATE

ESG

EVTEMP +

20

18 22

spe.esg n6 n10 n6 n8 = 1 spe.evthres n6 n21 n19 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1

CA

S1A

12

S1B

i.it n8 n17 = 1 l.lgate n1 n9 = 4.81e-9

l.ldrain n2 n5 = 1.0e-9 l.lsource n3 n7 = 4.63e-9

res.rlgate n1 n9 = 48.1 res.rldrain n2 n5 = 10 res.rlsource n3 n7 = 46.3

m.mmed n16 n6 n8 n8 = model=mmedmod, temp=m_temp, l=1u, w=1u m.mstrong n16 n6 n8 n8 = model=mstrongmod, temp=m_temp, l=1u, w=1u m.mweak n16 n21 n8 n8 = model= mweakmod, temp=m_temp, l=1u, w=1u

res.rbreak n17 n18 = 1, tc1=9e-4,tc2=-9e - 7 res.rdrain n50 n16 = 1e-4, tc1=4e-2,tc2=3e-4 res.rgate n9 n20 = 1.3 6 res.rslc1 n5 n51 = 1e-6, tc1=1e-3,tc2=1 e-5 res.rslc2 n5 n50 = 1e3 res.rsource n8 n7 = 2.8e-3, tc1=5e-3,tc2=1e-6 res.rvthres n22 n8 = 1, tc1=-6.7e-3,tc2= -1.5e-5 res.rvtemp n18 n19 = 1, tc1=-2.5e-3,tc2=1e-6 sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod

DPLCAP

10

RSLC2

6

8

EVTHRES

+

19

8

6

-

S2A

14

13

8

S2B

13

+

6

EGS EDS

8

-

15

CIN

CB

-

+

-

5

51

21

MSTRO

14

5 8

RSLC1

ISCL

50 RDRAIN

16

8

MMED

8

DBREAK

11

MWEAK

EBREAK

+

-

RSOURCE

RBREAK

17 18

IT

RVTHRES

17 18

7

RVTEMP 19

-

+

22

RLSOURCE

LDRAIN

RLDRAIN

DBODY

LSOURCE

VBAT

DRAIN

2

SOURCE

3

FDP038AN06A0 / FDI038AN06A0

v.vbat n22 n19 = dc=1 equations { i (n51->n50) +=iscl iscl: v(n51,n50) = ((v(n 5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/250))** 10)) }

PSPICE Thermal Model

REV 23 July 4, 2002 FDP038AN06A0T CTHERM1 TH 6 6. 45e-3

CTHERM2 6 5 3e-2 CTHERM3 5 4 1.4e-2 CTHERM4 4 3 1.65e-2 CTHERM5 3 2 4.85e-2 CTHERM6 2 TL 1e-1

RTHERM1 TH 6 3. 24e-3 RTHERM2 6 5 8.08e-3 RTHERM3 5 4 2.28e-2 RTHERM4 4 3 1e-1 RTHERM5 3 2 1.1e-1 RTHERM6 2 TL 1.4e-1

SABER Thermal Model

th

RTHERM1

6

RTHERM2

5

FDP038AN06A0 / FDI038AN06A0

JUNCTION

CTHERM1

CTHERM2

SABER thermal model FDP035AN06A0T template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 t h 6 =6.45e-3 ctherm.ctherm2 6 5 =3e-2 ctherm.ctherm3 5 4 =1.4e-2 ctherm.ctherm4 4 3 =1.65e-2 ctherm.ctherm5 3 2 =4.85e-2 ctherm.ctherm6 2 tl =1e-1

rtherm.rtherm1 th 6 =3.24e-3 rtherm.rtherm2 6 5 =8.08e-3 rtherm.rtherm3 5 4 =2.28e-2 rtherm.rtherm4 4 3 =1e-1 rtherm.rtherm5 3 2 =1.1e-1 rtherm.rtherm6 2 tl=1.4 e-1 }

RTHERM3

RTHERM4

RTHERM5

RTHERM6

CTHERM3

4

CTHERM4

3

CTHERM5

2

CTHERM6

tl

CASE

TRADEMARKS

The following intended to be an exhaustive list of all such trademarks.

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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHI RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

includes registered and unregistered trademarks and service marks, owned by Fairchild Semico nductor and/or its global subsidiaries, an d is not

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®*

®

chnology for Y our Success™

LD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

FDP038AN06A0 / FDI038AN06A0

LIFE SUPPORT

FAIRCHIL EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

POLICY

D’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

As used here in:

1. Life support devices or syst ems are devices or syst ems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semico www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor pa parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand repu tation, su bsta ndard perfo rmance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to pro tect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts eith er directly from Fa irchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fair child is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS Definition of Terms

Datasheet I

Advance Information Formative / In

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

2010 Fairchild Sem iconductor Corporation

©

nductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,

rts is a growing problem in the industry. All manufactures of semiconducto r products are experiencing counterfeiting of their

.

DEFINITIONS

dentification Product Status Definition

Design

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplement ary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I51

FDP038AN06A0 / FDI038AN06A0 Rev. B2

Fairchild FDP038AN06A0, FDI038AN06A0 service manual

Specifications and Main Features

Frequently Asked Questions

User Manual