Fairchild FDP038AN06A0, FDI038AN06A0 service manual

FDP038AN06A0 / FDI038AN06A0

N-Channel PowerTrench® MOSFET
60V, 80A, 3.8mΩ

FDP038AN06A0 / FDI038AN06A0

December 2010

Features

•r

•Q

• Low Miller Charge

•Low Q

• UIS Capability (Single Pulse and Repetitive Pulse)

= 3.5mΩ (Typ.), V

DS(ON)

(tot) = 95nC (Typ.), V

g

Body Diode

RR

= 10V, ID = 80A

GS

= 10V

GS

Applications

• Motor / Body Load Control

•ABS Systems

• Powertrain Management

• Injection Systems

• DC-DC converters and Off-line UPS

• Distributed Power Architectures and VRMs

Formerly developme ntal type 82584

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

TO-220AB

FDP SERIES

MOSFET Maximum Ratings T

DRAIN

(FLANGE)

= 25°C unless otherwise noted

C

• Primary Switch for 12V and 24V systems

SOURCE

TO-262AB

FDI SERIES

DRAIN

GATE

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
Drain Current

I

D

Continuous (T
Continuous (T

< 151oC, VGS = 10V)

C

= 25oC, VGS = 10V, with R

amb

= 62oC/W) 17 A

θJA

80 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 625 mJ
Power dissipation 310 W

o

Derate above 25

C2.07W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

©2010 Fairchild Semiconductor Corporation

Thermal Resistance Junction to Case TO-220, TO-262 0.48
Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) 62

o

C/W

o

C/W

FDP038AN06A0 / FDI038AN06A0 Rev. B2

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP038AN06A0 FDP038AN06A0 TO-220AB Tube N/A 50 units

FDI038AN06A0 FDI038AN06A0 TO-262AB Tube N/A 50 units

FDP038AN06A0 / FDI038AN06A0

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Tes t Cond itions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain to Source Breakdown Volt age ID = 250µA, VGS = 0V 60 - - V

V

= 50V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC - - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

= 80A, VGS = 10V - 0.0035 0.0038

I

D

I

= 40A, VGS = 6V - 0.0049 0.0074

Drain to Source On Resistance

D

= 80A, VGS = 10V,

I

D

T

= 175oC

J

- 0.0071 0.0078

Dynamic Characteristics

C
C
C
Q
Q
Q
Q
Q

ISS
OSS
RSS

g(TOT)
g(TH)
gs
gs2
gd

Input Capacitance
Output Capacitance - 1123 - pF
Reverse Transfer Capacitance - 367 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V
Threshold Gate Charge VGS = 0V to 2V - 12 15 nC
Gate to Source Gate Charge - 26 - nC
Gate Charge Threshold to Plateau - 15 - nC

V

DD

= 80A

I

D

= 1.0mA

I

g

= 30V

Gate to Drain “Miller” Charge - 27 - nC

- 6400 - pF

96 124 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 17 - ns
Rise Time - 144 - ns
Tur n-Off Delay Time - 34 - ns
Fall Time - 60 - n s
Turn-Off Time - - 115 ns

(VGS = 10V)

= 30V, ID = 80A

V

DD

= 10V, RGS = 2.4Ω

V

GS

- - 175 ns

Drain-Source Diode Characteristics

I

= 80A - - 1.25 V

V

SD

t

rr

Q

RR

Notes:
1: Starting T
2: Pulse Width = 100s

©2010 Fairchild Semiconductor Corporation FDP038AN06A0 / FDI038AN06A0 Rev. B2

Source to Drain Diode Voltage
Reverse Recovery Time ISD = 75A, dISD/dt = 100A/µs- -38ns

Reverse Recovered Charge ISD = 75A, dISD/dt = 100A/µs- -39nC

= 25°C, L = 0.255mH, IAS = 70A.

J

SD

= 40A - - 1.0 V

I

SD

FDP038AN06A0 / FDI038AN06A0

Typical Characteristics T

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

= 25°C unless otherwise noted

C

125

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

10

250

200

150

100

, DRAIN CURRENT (A)

D

I

50

0

150

25 50 75 100 125 150 175

Figure 2. Maximum Contin uous Drain Current vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

CURRENT LIMITED
BY PACKAGE

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

1/t2

θJC

0

10

x R

θJC

t

+ T

1

t

2

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

3000

TRANSCONDUCTANCE
MAY LIMIT CURRENT

-4

IN THIS REGION

-3

10

-2

10

t, PULSE WIDT H (s)

-1

10

1000

VGS = 10V

100

, PEAK CURRENT (A)

DM

I

10

-5

10

10

TC = 25oC
FOR TEMPERATURES

o

ABOVE 25
CURRENT AS FOLLOWS:

I = I

25

C DERATE PEAK

175 - T

150

0

10

C

1

10

Figure 4. Peak Current Capability

©2010 Fairchild Semiconductor Corporation FDP038AN06A0 / FDI038AN06A0 Rev. B2