Fairchild FDI030N06 service manual

tm

FDI030N06

D

G

S

I2-PAK
FDI Series

G SD

N-Channel PowerTrench® MOSFET

60V, 193A, 3.2mΩ

FDI030N06 N-Channel PowerTrench

June 2009

Features

• R

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

• RoHS Compliant

MOSFET Maximum Ratings

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 6 V/ns
P

D

TJ, T
T

L

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

= 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A

DS(on)

R

DS(on)

TC = 25oC unless otherwise noted

Symbol Parameter Ratings Units

Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V

-Continuous (TC = 25oC, Silicon Limited) 193*

Drain Current

-Continuous (TC = 25oC, Package Limited) 120
Drain Current - Pulsed (Note 1) 772 A
Single Pulsed Avalanche Energy (Note 2) 1434 mJ

(TC = 25oC) 231 W

- Derate above 25oC 1.54 W/oC

STG

Power Dissipation
Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

Description

This N-Channel MOSFET is produced using Fairchild Semicon­ductor’s advanced PowerTrench process that has been espe­cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• DC to DC Convertors / Synchronous Rectification

o

300

o

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

Thermal Resistance, Junction to Case 0.65
Thermal Resistance, Junction to Ambient 62.5

o

C/W

®

MOSFET

A-Continuous (TC = 100oC, Silicon Limited) 136*

C
C

©2009 Fairchild Semiconductor Corporation
FDI030N06 Rev. A

www.fairchildsemi.com1

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDI030N06 FDI030N06 TO-262 - - 50

FDI030N06 N-Channel PowerTrench

Electrical Characteristics

TC = 25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
∆BV

∆T
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC 60 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V

ID = 1mA, Referenced to 25oC - 0.05 - V/oC
VDS = 48V, V

= 0V - - 1

GS

VDS = 48V, TC = 150oC - - 500

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250µA 2.5 3.5 4.5 V
Static Drain to Source On Resistance VGS = 10V, ID = 75A - 2.6 3.2 mΩ
Forward Transconductance VDS = 10V, ID = 75A

(Note 4)

- 154 - S

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Input Capacitance
Output Capacitance - 1095 1455 pF
Reverse Transfer Capacitance - 415 625 pF

VDS = 25V, VGS = 0V
f = 1MHz

Total Gate Charge at 10V
Gate to Source Gate Charge - 40 - nC

Gate to Drain “Miller” Charge - 35 - nC

VDS = 48V, ID = 75A
VGS = 10V

(Note 4, 5)

- 7380 9815 pF

- 116 151 nC

Turn-On Delay Time
Turn-On Rise Time - 178 366 ns
Turn-Off Delay Time - 54 118 ns
Turn-Off Fall Time - 33 76 ns

VDD = 30V, ID = 75A
VGS = 10V, R

(Note 4, 5)

GEN

= 4.7Ω

- 39 87 ns

µA

®

MOSFET

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.51mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 75A, di/dt ≤ 450A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDI030N06 Rev. A

Maximum Continuous Drain to Source Diode Forward Current - - 193 A
Maximum Pulsed Drain to Source Diode Forward Current - - 772 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 50 - nC

, Starting TJ = 25°C

DSS

= 0V, I

GS

VGS = 0V, I

= 75A - - 1.3 V

SD
SD

dIF/dt = 100A/µs

2

= 75A

(Note 4)

- 46 - ns

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Typical Performance Characteristics

2 4 6 8

1

10

100

400

-55oC

150oC

*Notes:

1. VDS = 10V

2. 250

µµµµ

s Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0.1 1 5

10

100

700

*Notes:

1. 250

µµµµ

s Pulse Test

2. TC = 25oC

V

GS

=

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

0 70 140 210 280 350

2.0

2.5

3.0

3.5

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[

Ω

Ω

Ω

Ω

]

,

Drain-Source On-Resistance

ID, Drain Current [A]

0.0 0.5 1.0 1.5

1

10

100

400

*Notes:

1. VGS = 0V

2. 250

µµµµ

s Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0 20 40 60 80 100 120

0

2

4

6

8

10

*Note: ID = 75A

VDS = 15V
VDS = 30V
VDS = 48V

V

GS

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

0.1 1 10 30

0

3000

6000

9000

12000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted

)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. VGS = 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDI030N06 N-Channel PowerTrench

®

MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDI030N06 Rev. A

3

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