Fairchild FDH50N50, FDA50N50 service manual
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FDH50N50 / FDA50N50 500V N-Channel MOSFET
TM
UniFET
FDH50N50 / FDA50N50
500V N-Channel MOSFET
Features
• 48A, 500V, R
• Low gate charge ( typical 105 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
( typical 45 pF)
rss
G
= 0.105Ω @VGS = 10 V
DS(on)
D
S
TO-247
FDH Series
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor
correction.
D
!
!
"
"
"
"
!
!
"
"
"
"
!
!
S
GSD
TO-3P
FDA Series
!
!
G
Absolute Maximum Ratings
Symbol Parameter FDH50N50/FDA50N50 Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
Drain-Source Voltage 500 V
Drain Current - Continuous (TC = 25°C)
- Continuous (T
Drain Current - Pulsed
Gate-Source voltage ±20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 100°C)
C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
48
30.8
192 A
1868 mJ
48 A
62.5 mJ
4.5 V/ns
625
5
300 °C
Thermal Characteristics
Symbol Parameter Min. Max. Unit
R
θJC
R
θCS
R
θJA
Thermal Resistance, Junction-to-Case -- 0.2 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
A
A
W
W/°C
©2004 Fairchild Semiconductor Corporation
FDH50N50 / FDA50N50 Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDH50N50 FDH50N50 TO-247 - - 30
FDA50N50 FDA50N50 TO-3P - - 30
FDH50N50 / FDA50N50 500V N-Channel MOSFET
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Conditions Min. Typ. Max Units
Off Characteristics
BV
DSS
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 500 -- -- V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V
I
= 250µA, Referenced to 25°C--0.5--V/°C
D
V
= 400V, TC = 125°C
DS
--
--
--
--
25
250µAµA
Gate-Body Leakage Current, Forward VGS = 20V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -20V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 40V, ID = 48A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 760 1000 pF
= 10V, ID = 24A -- 0.089 0.105 Ω
V
GS
(Note 4)
-- 20 -- S
-- 4979 6460 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 50 65 pF
Output Capacitance VDS = 400V, VGS = 0V, f = 1.0MHz -- 161 -- pF
eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 342 -- pF
Turn-On Delay Time VDD = 250V, ID = 48A
R
= 25Ω
Turn-On Rise Time -- 360 730 ns
G
-- 105 220 ns
Turn-Off Delay Time -- 225 460 ns
Turn-Off Fall Time -- 230 470 ns
Total Gate Charge VDS = 400V, ID = 48A
= 10V
V
Gate-Source Charge -- 33 -- nC
GS
Gate-Drain Charge -- 45 -- nC
(Note 4, 5)
-- 105 137 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 48 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 192 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 48A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 48A
/dt =100A/µs
dI
Reverse Recovery Charge -- 10 -- µC
F
(Note 4)
-- 580 -- ns
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.46mH, I
3. ISD ≤ 48A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
= 48A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
FDH50N50 / FDA50N50 Rev. A
2
www.fairchildsemi.com
Typ ical Perform ance Character istics
FDH50N50 / FDA50N50 500V N-Channel MOSFET
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
V
2
10
1
10
0
10
, Drain Current [A]
D
I
-1
10
10
Top : 15.0 V
10 .0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
-1
GS
VDS, Drain-Source Voltage [V]
100
10
150oC
!
25oC
1
, Drain Current [A]
D
Notes :
1. 250
µ
s Pulse Test
2. T
= 25oC
!
0
10
C
1
10
I
0.1
45678910
!
VGS , Gate-Source Voltage [V]
-55oC
!
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
0.4
0.3
],
Ω
[
0.2
DS(ON)
R
0.1
Drain-Source On-Resistance
0.0
0 25 50 75 100 125 150 175
VGS = 10V
ID, Drain Current [A]
VGS = 20V
Note : TJ = 25oC
160
120
80
40
, Reverse Drain Current [A]
DR
I
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-Drain Voltage [V]
150oC
25oC
Notes :
1. V
2. 250
Notes :
1. V
2. 250
= 40V
DS
µ
s Pulse Test
= 0V
GS
µ
s Pulse Test
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
12,000
10,000
8,000
6,000
4,000
Capacitance [pF]
2,000
0
-1
10
FDH50N50 / FDA50N50 Rev. A
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
C
= C
rss
C
C
oss
C
rss
0
10
1
10
VDS, Drain-Source Voltage [V]
12
gd
gd
10
VDS = 100V
VDS = 250V
VDS = 400V
8
iss
Notes :
1. V
= 0 V
GS
2. f = 1 MHz
2
10
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 20 40 60 80 100 120
Note : ID = 48A
QG, Total Gate Charge [nC]
3
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