Fairchild FDH45N50F-F133 service manual
FDH45N50F_F133
500V N-Channel MOSFET, FRFET
FDH45N50F_F133 500V N-Channel MOSFET, FRFET
October 2008
TM
UniFET
Features
• 45A, 500V, R
• Low gate charge ( typical 105 nC)
•Low C
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
( typical 62 pF)
rss
= 0.12Ω @VGS = 10 V
DS(on)
G
D
S
TO-247
FDH Series
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi
cient switched mode power supplies and active power factor
correction.
D
G
S
Absolute Maximum Ratings
Symbol Parameter FDH45N50F_F133 Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns
P
D
T
J, TSTG
T
L
Drain-Source Voltage 500 V
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source voltage ±30 V
Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 45 A
Repetitive Avalanche Energy (Note 1) 62.5 mJ
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
45
28.4
180 A
1868 mJ
625
5
300 °C
W/°C
-
A
A
W
Thermal Characteristics
Symbol Parameter Min. Max. Unit
R
θJC
R
θCS
R
θJA
©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDH45N50F_F133 Rev. C
Thermal Resistance, Junction-to-Case -- 0.2 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Widt h Quantity
FDH45N50F_F133 FDH45N50F_F133 TO-247 - - 30
FDH45N50F_F133 500V N-Channel MOSFET, FRFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Typ. Max Units
Off Characteristics
BV
DSS
ΔBV
/ ΔT
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 500 -- -- V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V
ID = 250μA, Referenced to 25°C -- 0.5 -- V/°C
VDS = 400V, TC = 125°C
--
--
--
--
25
250μAμA
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 40V, ID = 22.5A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 790 1030 pF
VGS = 10V, ID = 22.5A -- 0.105 0.12 Ω
(Note 4)
-- 49.0 -- S
-- 5100 6630 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 62 -- pF
Output Capacitance VDS = 400V, VGS = 0V, f = 1.0MHz -- 161 -- pF
eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 342 -- pF
Turn-O n Delay Time VDD = 250V, ID = 48A
Turn-O n Ris e Ti me -- 500 1010 ns
RG = 25Ω
-- 140 290 ns
Turn-O ff Delay Time -- 215 440 ns
Turn-O ff Fall Time -- 245 500 ns
Total Gate Charge VDS = 400V, ID = 48A
Gate-Source Charge -- 33 -- nC
VGS = 10V
Gate-Drain Charge -- 45 -- nC
(Note 4, 5)
-- 105 137 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 45 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 180 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 45A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 45A
Reverse Recovery Charge -- 0.64 -- μC
dIF/dt =100A/μs (Note 4)
-- 188 -- ns
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.46mH, IAS = 48A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 45A, di/dt ≤ 200A/μs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
, Starting TJ = 125°C
DSS
FDH45N50F_F133 Rev. C
2 www.fairchildsemi.com
Typical Performance Characteristics
FDH45N50F_F133 500V N-Channel MOSFET, FRFET
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
V
GS
Top : 15.0 V
10
10
, Drain Current [A]
D
I
10
2
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
0
-1
10
0
10
VDS, Drain-Source Voltage [V]
Notes :∝
1. 250レs Pulse Test
= 25∩
2. T
C
1
10
2
10
10
, Drain Current [A]
D
I
10
150oC
1
25oC
0
2 4 6 8 10 12
VGS, Gate-Source Voltage [V]
-55oC
Notes :∝
1. VDS = 40V
2. 250
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
0.30
0.25
0.20
VGS = 10V
[ヘ ],
0.15
DS(ON)
R
0.10
Drain-Source On-Resistance
0.05
0.00
0 20 40 60 80 100 120 140 160
VGS = 20V
ID, Drain Current [ A]
Note : T∝J = 25∩
2
10
1
10
, Reverse Drain Current [A]
DR
I
0
10
0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1.8
150∩
VSD, Source-Drain voltage [V]
25∩
Notes :∝
1. VGS = 0V
2. 250
レs Pulse Test
レs Pulse Test
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
12000
10000
8000
6000
4000
Capacitances [pF]
2000
0
-1
10
FDH45N50F_F133 Rev. C
C
oss
C
iss
C
rss
0
10
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
* Note :
1. V
2. f = 1 MHz
1
10
GS
= 0 V
12
VDS = 100V
10
VDS = 250V
VDS = 400V
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 20406080100120
Note : ID = 48A
QG, Total Gate Charge [nC]
3 www.fairchildsemi.com
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