Fairchild FDH44N50 service manual

查询FDH44N50供应商查询FDH44N50供应商

FDH44N50

44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET

FDH44N50

August 2002

Applications

Switch Mode Power Supplies(SMPS), such as

• PFC Boost

• Two-Switch Forward Converter

• Single Switch Forward Converter

• Flyback Converter

• Buck Converter

• High Speed Switching

Package

JEDEC TO-247

SOURCE

DRAIN

DRAIN

(FLANGE)

GATE

Features

• Low Gate Charge Qg results in Simple Drive
Requirement

• Improved Gate, Avalanche and High Reapplied dv/dt
Ruggedness

• Reduced r

DS(ON)

• Reduced Miller Capacitance and Low Input Capacitance

• Improved Switching Speed with Low EMI

• 175°C Rated Junction Temperature

Symbol

D

G

S

Absolute Maximum Ratings T

o

= 25

C unless otherwise noted

C

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 500 V
Gate to Source Voltage ±30 V
Drain Current

I

D

Continuous (T
Continuous (T
Pulsed

P

, T

T

J

Power dissipation 750 W

D

Derate above 25
Operating and Storage Temperature -55 to 175

STG

= 25oC, VGS = 10V) 44 A

C

= 100oC, VGS = 10V) 32 A

C

1

o

C5W/

176 A

Soldering Temperature for 10 seconds 300 (1.6mm from case)
Mounting Torque, 8-32 or M3 Screw 10ibf*in (1.1N*m)

Thermal Characteristics

R

R

R

©2002 Fairchild Semiconductor Corporation

Thermal Resistance Junction to Case 0.2

θJC

Thermal Resistance Case to Sink, Flat, Greased Surface 0.24

θCS

Thermal Resistance Junction to Ambient 40

θJA

o

C

o

C

o

C

o

C/W

o

C/W

o

C/W

FDH44N50 Rev. A4, August 2002

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDH44N50 FDH44N50 TO-247 - - 30

FDH44N50

Electrical Characteristics

TJ = 25°C (unless otherwise noted)

Symbol Parameter Tes t C onditions Min Typ Max Units

Statics

∆B

B

VDSS

VDSS

r

DS(ON)

V

GS(th)

I

DSS

I

GSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 500 - - V

/∆TJBreakdown Voltage Temp. Coefficient

Reference to 25
ID = 1mA

o

C,

-0.61-V/°C

Drain to Source On-Resistance VGS = 10V, ID = 22A - 0.11 0.12 Ω
Gate Threshold Voltage VDS = VGS, ID = 250µA 23.154 V

V

= 500V TC = 25oC- - 25

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

Dynamics

g

Q

g(TOT)

Q
Q

t

d(ON)

t

d(OFF)

C

C

OSS

C

RSS

Forward Transconductance VDS = 50V, ID = 22A 11 - - S

fs

Total Gate Charge at 10V
Gate to Source Gate Charge - 24 29 nC

gs

Gate to Drain “Miller” Charge - 31 37 nC

gd

Tur n-On Delay Time
Rise Time - 84 - ns

t

r

Turn-Off Delay Time - 45 - ns

t

Fall Time -79-ns

f

Input Capacitance

ISS

Output Capacitance - 645 - pF
Reverse Transfer Capacitance - 40 - pF

V

= 10V,

GS

V

= 400V,

DS

= 44A

I

D

= 250V,

V

DD

= 44A,

I

D

= 2.15Ω,

R

G

R

= 5.68Ω

D

= 25V, VGS = 0V,

V

DS

f = 1MHz

- 90 108 nC

-16-ns

-5335- pF

µA

Avalanche Characteristics

E

I

AR

Single Pulse Avalanche Energy

AS

Avalanche Current - - 44 A

2

1500 - - mJ

Drain-Source Diode Characteristics

I

I

SM

V

t

Q

Notes:

1: Repetitive rating; pulse width limited by maximum junction temperature

2: Starting T

©2002 Fairchild Semiconductor Corporation FDH44N50 Rev. A4, August 2002

Continuous Source Current

S

(Body Diode)
Pulsed Source Current

1

(Body Diode)
Source to Drain Diode Voltage I

SD

Reverse Recovery Time ISD = 44A, dISD/dt = 100A/µs - 920 1100 ns

rr

Reverse Recovered Charge ISD = 44A, dISD/dt = 100A/µs -1418µC

RR

= 25°C, L = 1.61mH, IAS = 44

J

MOSFET symbol
showing the
integral reverse
p-n junction diode.

= 44A - 0.900 1.2 V

SD

D

G

S

--44A

- - 176 A