Fairchild FDB3632, FDP3632, FDI3632, FDH3632 service manual

FDB3632 / FDP3632 / FDI3632 / FDH3632

N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ

FDB3632 / FDP3632 / FDI3632 / FDH3632

November 2004

Features

•r

•Q

• Low Miller Charge

•Low Q

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

= 7.5mΩ (Typ.), V

DS(ON)

(tot) = 84nC (Typ.), V

g

Body Diode

RR

= 10V, ID = 80A

GS

= 10V

GS

Applications

• DC/DC converters and Off-Line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• High Voltage Synchronous Rectifier

• Direct Injection / Diesel Injection Systems

• 42V Automotive Load Control

• Electronic Valve Train Systems

S

DRAIN

D

G

DRAIN

(FLANGE)

TO-220AB

FDP SERIES

S

G

D

G

S

TO-263AB

FDB SERIES

MOSFET Maximum Ratings T

DRAIN

(FLANGE)

DRAIN

(FLANGE)

TO-262AB

FDI SERIES

= 25°C unless otherwise noted

C

S

D

G

TO-247

FDH SERIES

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 100 V Gate to Source Voltage ±20 V Drain Current

I

D

Continuous (T Continuous (T

< 111oC, VGS = 10V)

C

= 25oC, VGS = 10V, R

amb

= 43oC/W) 12 A

θJA

80 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 393 mJ Power dissipation 310 W

o

Derate above 25

C2.07W/

Operating and Storage Temperature -55 to 175

D

S

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

R

θJA

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

Thermal Resistance Junction to Case TO-220, TO-263, TO-262, TO-247

Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) 62 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43 Thermal Resistance Junction to Ambient TO-247 (Note 2) 30

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

certification.

0.48

FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C1

o

C/W

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB3632 FDB3632 TO-263AB 330mm 24mm 800 units FDP3632 FDP3632 TO-220AB Tube N/A 50 units

FDI3632 FDI3632 TO-262AA Tube N/A 50 units

FDH3632 FDH3632 TO-247 Tube N/A 30 units

FDB3632 / FDP3632 / FDI3632 / FDH3632

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 100 - - V

V

= 80V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC= 150oC - - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

I

=80A, VGS=10V - 0.0075 0.009

D

Drain to Source On Resistance

=40A, VGS = 6V, - 0.009 0.015

D

=80A, VGS=10V, TC=175oC - 0.018 0.022

I

D

Dynamic Characteristics

C C C Q Q Q Q Q

ISS OSS RSS

g(TOT) g(TH) gs gs2 gd

Input Capacitance Output Capacitance - 820 - pF Reverse Transfer Capacitance - 200 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V Threshold Gate Charge VGS = 0V to 2V - 11 14 nC Gate to Source Gate Charge - 30 - nC Gate Charge Threshold to Plateau - 20 - nC

= 50V

V

DD

I

= 80A

D

I

= 1.0mA

g

Gate to Drain “Miller” Charge - 20 - nC

- 6000 - pF

- 84 110 nC

µA

ΩI

Resistive Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 30 - ns Rise Time - 39 - ns Turn-Off Delay Time - 96 - ns Fall Time - 46 - ns Turn-Off Time - - 213 ns

(VGS = 10V)

V

DD

V

GS

- - 102 ns

= 50V, ID = 80A = 10V, RGS = 3.6Ω

Drain-Source Diode Characteristics

I

= 80A - - 1.25 V

V

SD

t

rr

Q

RR

Notes: 1: Starting T 2: Pulse Width = 100s

Source to Drain Diode Voltage Reverse Recovery Time ISD = 75A, dISD/dt= 100A/µs- - 64ns

Reverse Recovered Charge ISD = 75A, dISD/dt= 100A/µs - - 120 nC

= 25°C, L = 0.12mH, IAS = 75A, VDD = 80V.

J

SD

= 40A - - 1.0 V

I

SD

FDB3632 / FDP3632 / FDI3632 / FDH3632

Typical Characteristics T

= 25°C unless otherwise noted

A

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

150

125

CURRENT LIMITED BY PACKAGE

100

75

V

= 10V

GS

50

, DRAIN CURRENT (A)

D

I

25

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

Figure 2. Maximum Continuous Drain Current vs

Case Temperature

, NORMALIZED Z

, PEAK CURRENT (A) I

θJC

DM

THERMAL IMPEDANCE

2000

1000

100

50

0.1

0.01

10

-5

10

VGS = 10V

-5

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

-2

10

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

TRANSCONDUCTANCE MA Y LIMIT CURRENT IN THIS REGION

-4

10

-3

10

-2

10

t, PULSE WIDTH (s)

-1

10

TC = 25oC

FOR TEMPERATURES ABOVE 25 CURRENT AS FOLLOWS:

I = I

P

DM

2

x R

θJC

0

10

o

C DERATE PEAK

175 - T

25

0

10

t

1

θJC

150

t

2

+ T

C

1

10

C

1

10

Figure 4. Peak Current Capability

Typical Characteristics T

= 25°C unless otherwise noted

A

FDB3632 / FDP3632 / FDI3632 / FDH3632

400

100

OPERATION IN THIS

10

, DRAIN CURRENT (A)

1

D

I

0.1

AREA MAY BE

LIMITED BY r

SINGLE PULSE TJ = MAX RATED

TC = 25oC

110100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

10µs

100µs

1ms

10ms

DC

200

Figure 5. Forward Bias Safe Operating Area

150

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

V

= 15V

DD

120

90

60

, DRAIN CURRENT (A)

D

I

30

0

3.0 3.5 4.0 4.5 5.0 5.5 6.0

TJ = 25oC

TJ = 175oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

200

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

100

STARTING TJ = 150oC

, AVALANCHE CURRENT (A)

AS

I

10

0.01

0.1 1 10

tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

150

VGS = 10V

120

90

60

, DRAIN CURRENT (A)

D

30

I

0

01234

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 6V

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

VGS = 5.5V

VGS = 5V

TC = 25oC

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

10

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

9

8

7

DRAIN TO SOURCE ON RESISTANCE (m Ω)

6

0 20406280

ID, DRAIN CURRENT (A)

VGS = 6V

VGS = 10V

Figure 9. Drain to Source On Resistance vs Drain

Current

2.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID =80A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature