Fairchild FDH34N40 service manual

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FDH34N40

34A, 400V, 0.115 Ohm, N-Channel SMPS Power MOSFET

FDH34N40

August 2002

Applications

Switch Mode Power Supplies(SMPS), such as

• PFC Boost

• Two-Switch Forward Converter

• Single Switch Forward Converter

• Flyback Converter

• Buck Converter

• High Speed Switching

Package

Features

• Low Gate Charge Qg results in Simple Drive
Requirement

• Improved Gate, Avalanche and High Reapplied dv/dt
Ruggedness

• Reduced r

• Reduced Miller Capacitance and Low Input Capacitance

• Improved Switching Speed with Low EMI

• 175°C Rated Junction Temperature

DS(ON)

Symbol

JEDEC TO-247

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

Absolute Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 400 V
Gate to Source Voltage ±30 V
Drain Current
Continuous (T
Continuous (T
Pulsed
Power dissipation

Derate above 25
Operating and Storage Temperature -55 to 175
Soldering Temperature for 10 seconds 300 (1.6mm from case)
Mounting Torque, 8-32 or M3 Screw 10ibf*in (1.1N*m)

= 25oC, VGS = 10V)

C

= 100oC, VGS = 10V) 24 A

C

(Note 1) 136 A

o

C

= 25°C unless otherwise noted

C

34 A

469

3.1

D

G

S

W

W/oC

o

C

o

C

Thermal Characteristics

R
R
R

©2002 Fairchild Semiconductor Corporation

Thermal Resistance Junction to Case 0.32

θJC

Thermal Resistance Case to Sink, Flat, Greased Surface 0.24 TYP

θCS

Thermal Resistance Junction to Ambient 40

θJA

o

C/W

o

C/W

o

C/W

FDH34N40 Rev. A,

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDH34N40 FDH34N40 TO-247 Tube - 30

FDH34N40

Electrical Characteristics

TC = 25°C (unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Units

Statics

B

VDSS

∆B

VDSS

r

DS(ON)

V

GS(th)

I

DSS

I

GSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 400 - - V

/∆TJBreakdown Voltage Temp. Coefficient

V/°C Reference to 25°C
I

= 1mA

D

-0.4-

Drain to Source On-Resistance VGS = 10V, ID = 17A - 0.106 0.115 Ω
Gate Threshold Voltage VDS = VGS, ID = 250µA 2.0 3.4 4.0 V

V

= 400V TC = 25oC- - 25

Zero Gate Voltage Drain Current

DS

= 0V TC =150oC - - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

Dynamics

g

fs

Q

g(TOT)

Q

gs

Q

gd

t

d(ON)

t

r

t

d(OFF)

t

f

C

ISS

C

OSS

C

RSS

Forward Transconductance VDS = 50V, ID = 17A 15 - - S
Total Gate Charge at 10V
Gate to Source Gate Charge - 17 20 nC
Gate to Drain “Miller” Charge - 18 22 nC
Tur n-On Delay Time
Rise Time - 72 - ns
Turn-Off Delay Time - 42 - ns
Fall Time - 58 - ns
Input Capacitance
Output Capacitance - 460 - pF
Reverse Transfer Capacitance - 29.5 - pF

V

= 10V

GS

V

= 320V

DS

= 34A

I

D

= 200V

V

DD

= 34A

I

D

= 4.3Ω

R

G

R

= 5.88Ω

D

= 25V, VGS = 0V

V

DS

f = 1MHz

-5768nC

-16-ns

-3370- pF

µA

Avalanche Characteristics

E

AS

I

AR

Single Pulse Avalanche Energy (Note 2) 2312 - - mJ
Avalanche Current - - 34 A

Drain-Source Diode Characteristics

Continuous Source Current

I

S

(Body Diode)

I

SM

V

t

Q

Notes:

1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting T

©2002 Fairchild Semiconductor Corporation FDH34N40 Rev. A

Pulsed Source Current (Note 1)
(Body Diode)

Source to Drain Diode Voltage I

SD

Reverse Recovery Time ISD = 34A, dISD/dt = 100A/µs - 445 534 ns

rr

Reverse Recovered Charge ISD = 34A, dISD/dt = 100A/µs - 7.16 8.6 µC

RR

= 25°C, L = 4mH, IAS = 34A

J

MOSFET symbol
showing the
integral reverse
p-n junction diode.

= 34A - 0.9 1.2 V

SD

D

G

S

--34A

- - 136 A