Fairchild FDH27N50 service manual

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FDH27N50

27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET

FDH27N50

August 2002

Applications

Switch Mode Power Supplies(SMPS), such as

• PFC Boost

• Two-Switch Forward Converter

• Single Switch Forward Converter

• Flyback Converter

• Buck Converter

• High Speed Switching

Package

JEDEC TO-247

DRAIN

(FLANGE)

SOURCE

DRAIN

Features

• Low Gate Charge Qg results in Simple Drive Require­ment

• Improved Gate, Avalanche and High Reapplied dv/dt
Ruggedness

• Reduced r

• Reduced Miller Capacitance and Low Input Capacitance

• Improved Switching Speed with Low EMI

• 175°C Rated Junction Temperature

DS(ON)

Symbol

GATE

D

G

S

Absolute Maximum Ratings TC = 25

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

P

, T

T

J

Drain to Source Voltage 500 V
Gate to Source Voltage ±30 V
Drain Current
Continuous (T
Continuous (T
Pulsed (Note 1) 108 A
Power dissipation

D

Derate above 25
Operating and Storage Temperature -55 to 175

STG

Soldering Temperature for 10 seconds 300 (1.6mm from case)
Mounting Torque, 8-32 or M3 Screw 10ibf*in (1.1N*m)

= 25oC, VGS = 10V)

C

= 100oC, VGS = 10V) 19 A

C

o

C

o

C unless otherwise noted

27 A

450

3

Thermal Characteristics

R

R

R

©2002 Fairchild Semiconductor Corporation

Thermal Resistance Junction to Case 0.33

θJC

Thermal Resistance Case to Sink, Flat, Greased Surface 0.24 TYP

θCS

Thermal Resistance Junction to Ambient 40

θJA

W

W/oC

o

C

o

C

o

C/W

o

C/W

o

C/W

FDH27N50 Rev. A2

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDH27N50 FDH27N50 TO-247 Tube - 30

FDH27N50

Electrical Characteristics

Tc = 25°C (unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Units

Statics

∆B

B

VDSS

VDSS

r

DS(ON)

V

GS(th)

I

DSS

I

GSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 500 - - V

/∆TJBreakdown Voltage Temp. Coefficient

Reference to 25

= 1mA

I

D

o

C

-0.64-V/°C

Drain to Source On-Resistance VGS = 10V, ID = 13.5A - 0.17 0.19 Ω
Gate Threshold Voltage VDS = VGS, ID = 250µA2.03.34.0V

V

= 500V TC =25oC- - 25

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- - 250

V

GS

Gate to Source Leakage Current VGS = ±30V - - ±100 nA

Dynamics

g

Q

g(TOT)

Q
Q

t

d(ON)

t

d(OFF)

C

C

OSS

C

RSS

Forward Transconductance VDS = 50V, ID = 13.5A 11 - - S

fs

Total Gate Charge at 10V
Gate to Source Gate Charge - 17 20 nC

gs

Gate to Drain “Miller” Charge - 18 22 nC

gd

Turn-On Delay Time
Rise Time - 54 - ns

t

r

Turn-Off Delay Time - 47 - ns

t

Fall Time - 54 - ns

f

Input Capacitance

ISS

Output Capacitance - 409 - pF
Reverse Transfer Capacitance - 22 - pF

V

= 10V

GS

V

= 400V

DS

= 27A

I

D

= 250V

V

DD

= 27A

I

D

= 4.3Ω

R

G

R

= 9.3Ω

D

= 25V, VGS = 0V

V

DS

f = 1MHz

-5667nC

-14-ns

-3550- pF

µA

Avalanche Characteristics

E

I

AR

Single Pulse Avalanche Energy (Note 2) 2552 - - mJ

AS

Avalanche Current - - 27 A

Drain-Source Diode Characteristics

I

I

SM

V

t

Q

Notes:

1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting T

©2002 Fairchild Semiconductor Corporation FDH27N50 Rev. A2

Continuous Source Current

S

(Body Diode)
Pulsed Source Current (Note 1)

(Body Diode)
Source to Drain Diode Voltage I

SD

Reverse Recovery Time ISD = 27A, dISD/dt = 100A/µs - 563 714 ns

rr

Reverse Recovered Charge ISD = 27A, dISD/dt = 100A/µs- 9.2 14 µC

RR

= 25°C, L = 7mH, IAS = 27A

J

MOSFET symbol
showing the
integral reverse
p-n junction diode.

= 27A - 0.89 1.2 V

SD

D

G

S

--27A

- - 108 A