Fairchild FDH15N50, FDP15N50, FDB15N50 service manual
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FDH15N50 / FDP15N50 / FDB15N50
15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET
FDH15N50 / FDP15N50 / FDB15N50
August 2003
Applications
Switch Mode Power Supplies(SMPS), such as
• PFC Boost
• Two-Switch Forward Converter
• Single Switch Forward Converter
• Flyback Converter
• Buck Converter
• High Speed Switching
Features
• Low Gate Charge Qg results in Simple Drive
Requirement
• Improved Gate, Avalanche and High Reapplied dv/dt
Ruggedness
• Reduced r
• Reduced Miller Capacitance and Low Input Capacitance
• Improved Switching Speed with Low EMI
DS(ON)
• 175°C Rated Junction Temperature
Package
DRAIN
(BOTTOM)
SOURCE
DRAIN
GATE
TO-247
FDH SERIES
GATE
SOURCE
TO-263AB
FDB SERIES
Absolute Maximum Ratings T
DRAIN
(FLANGE)
o
= 25
C unless otherwise noted
C
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
SOURCE
DRAIN
GATE
Symbol
G
Symbol Parameter Ratings Units
V
DSS
V
GS
Drain to Source Voltage 500 V
Gate to Source Voltage ±30 V
Drain Current
I
D
P
, T
T
J
Continuous (T
Continuous (T
1
Pulsed
Power dissipation
D
Derate above 25
Operating and Storage Temperature -55 to 175
STG
= 25oC, VGS = 10V)
C
= 100oC, VGS = 10V) 11 A
C
o
C
15 A
60 A
300
2
Soldering Temperature for 10 seconds 300 (1.6mm from case)
D
S
W
W/oC
o
C
o
C
Thermal Characteristics
R
R
R
©2003 Fairchild Semiconductor Corporation
Thermal Resistance Junction to Case 0.50
θJC
Thermal Resistance Junction to Ambient (TO-247) 40
θJA
Thermal Resistance Junction to Ambient (TO-220, TO-263) 62
θJA
o
C/W
o
C/W
o
C/W
FDH15N50 / FDP15N50 / FDB15N50 RevD2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDH15N50 FDH15N50 TO-247 Tube - 30
FDP15N50 FDP15N50 TO-220 Tube - 50
FDB15N50 FDB15N50 TO-263 330mm 24mm 800
FDH15N50 / FDP15N50 / FDB15N50
Electrical Characteristics
TJ = 25°C (unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Units
Statics
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 500 - - V
/∆TJBreakdown Voltage Temp. Coefficient
Reference to 25
ID = 1mA
o
C,
-0.58-V/°C
Drain to Source On-Resistance VGS = 10V, ID = 7.5A - 0.33 0.38 Ω
Gate Threshold Voltage VDS = VGS, ID = 250µA 2.0 3.4 4.0 V
V
= 500V TC = 25oC- - 25
Zero Gate Voltage Drain Current
DS
= 0V TC = 150oC- - 250
V
GS
Gate to Source Leakage Current VGS = ±30V - - ±100 nA
∆B
B
VDSS
VDSS
r
DS(ON)
V
GS(th)
I
DSS
I
GSS
Dynamics
g
Q
g(TOT)
Q
Q
t
d(ON)
t
d(OFF)
C
C
OSS
C
RSS
Forward Transconductance VDD = 10V, ID = 7.5A 10 - - S
fs
Total Gate Charge at 10V
Gate to Source Gate Charge - 7.2 10 nC
gs
Gate to Drain “Miller” Charge - 12 16 nC
gd
Tur n-On Delay Time
t
Rise Time - 5.4 - ns
r
Turn-Off Delay Time - 26 - ns
t
Fall Time - 5 - ns
f
Input Capacitance
ISS
Output Capacitance - 230 - pF
Reverse Transfer Capacitance - 16 - pF
V
= 10V,
GS
V
= 400V,
DS
= 15A
I
D
= 250V,
V
DD
= 15A,
I
D
= 6.2Ω,
R
G
R
= 17Ω
D
= 25V, VGS = 0V,
V
DS
f = 1MHz
-3341nC
-9-ns
-1850- pF
µA
Avalanche Characteristics
E
I
AR
Single Pulse Avalanche Energy
AS
Avalanche Current - - 15 A
2
760 - - mJ
Drain-Source Diode Characteristics
I
I
SM
V
t
Q
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting T
©2003 Fairchild Semiconductor Corporation FDH15N50 / FDP15N50 / FDB15N50 RevD2
Continuous Source Current
S
(Body Diode)
Pulsed Source Current
1
(Body Diode)
Source to Drain Diode Voltage I
SD
Reverse Recovery Time ISD = 15A, diSD/dt = 100A/µs - 470 730 ns
rr
Reverse Recovered Charge ISD = 15A, diSD/dt = 100A/µs - 5 6.6 µC
RR
= 25°C, L = 7.0mH, IAS = 15A
J
MOSFET symbol
showing the
integral reverse
p-n junction diode.
= 15A - 0.86 1.2 V
SD
D
G
S
--15A
--60A
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