Fairchild FDH055N15A service manual

D

G

S

TO-220

G

SD

G

S

D

TO-247

FDH055N15A

N-Channel PowerTrench® MOSFET

150V, 167A, 5.9mΩ

FDH055N15A N-Channel PowerTrench

April 2011

Features

• R

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

• RoHS Compliant

= 4.8mΩ ( Typ.)@ VGS = 10V, ID = 120A

DS(on)

R

DS(on)

Description

This N-Channel MOSFET is produced using Fairchild Semi-

conductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• DC to DC Converters

• Synchronous Rectification for Server/Telecom PSU

• Battery Charger

• AC motor drives and Uninterruptible Power Supplies

• Off-line UPS

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

P

D

TJ, T

STG

T

L

*Calculated continuous current based on maximum allowable junction temperature, Package limitation current is 156A.

Drain to Source Voltage 150 V

Gate to Source Voltage ±20 V

Drain Current

Drain Current - Pulsed (Note 1) 668 A

Single Pulsed Avalanche Energy (Note 2,6) 835 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 25oC unless otherwise noted

C

- Continuous (TC = 25oC, Silicon Limited) 167*

- Continuous (TC = 25oC, Package Limited) 156

(TC = 25oC) 429 W

- Derate above 25oC 2.86 W/oC

300

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

θCS

R

θJA

©2011 Fairchild Semiconductor Corporation
FDH055N15A Rev. A4

Thermal Resistance, Junction to Case 0.35

Thermal Resistance, Case to Heat Sink (Typical) 0.24

Thermal Resistance, Junction to Ambient 40

www.fairchildsemi.com1

A- Continuous (TC = 100oC, Silicon Limited) 118

o

C

o

C

o

C/WR

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDH055N15A FDH055N15A TO-247 - - 30

FDH055N15A N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
∆BV

∆T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 150 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±20V, V

ID = 250µA, Referenced to 25oC - 0.1 - V/oC

VDS = 120V, V

= 0V - - 1

GS

VDS = 120V, TC = 150oC - - 500

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250µA 2.0 - 4.0 V

Static Drain to Source On Resistance VGS = 10V, I

= 120A - 4.8 5.9 mΩ

D

Forward Transconductance VDS = 10V, ID = 120A (Note 4) - 219 - S

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss(er)

Q

g(tot)

Q

gs

Q

gs2

Q

gd

Input Capacitance

Output Capacitance - 664 885 pF

Reverse Transfer Capacitance - 23 - pF

VDS = 75V, VGS = 0V
f = 1MHz

Energy Related Output Capacitance VDS = 75V, VGS = 0V - 1159 - pF

Total Gate Charge at 10V

Gate to Source Gate Charge - 31 - nC

Gate Charge Threshold to Plateau - 15 - nC

Gate to Drain “Miller” Charge - 16 - nC

VDS = 75V, ID = 120A
VGS = 10V
(Note 4,5)

ESR Equivalent Series Resistance(G-S) Drain Open - 1.2 - Ω

- 7100 9445 pF

- 92 120 nC

µA

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 67 144 ns

Turn-Off Delay Time - 71 152 ns

Turn-Off Fall Time - 21 52 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Starting TJ = 25°C, L = 3 mH, IAS = 23.6 A.

3. ISD ≤ 120A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%.

5. Essentially Independent of Operating Temperature Typical Characteristics.

6. Single Pulsed Avalanche Energy per Die.

Maximum Continuous Drain to Source Diode Forward Current - - 167* A

Maximum Pulsed Drain to Source Diode Forward Current - - 668 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 342 - nC

, Starting TJ = 25°C.

DSS

VDD = 75V, ID = 120A
VGS = 10V, R

GEN

= 4.7Ω

(Note 4,5)

= 0V, I

GS

VGS = 0V, I

= 120A - - 1.25 V

SD

= 120A, VDS = 75V

SD

dIF/dt = 100A/µs (Note 4)

- 35 80 ns

- 105 - ns

FDH055N15A Rev. A4

2

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Typical Performance Characteristics

2 3 4 5 6

1

10

100

500

-55oC

175oC

*Notes:

1. VDS = 10V

2. 250µs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0.1 1 4

10

100

500

*Notes:

1. 250µs Pulse Test

2. TC = 25oC

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

V

GS

= 15.0V

10.0V

8.0V

7.0V

6.5V

6.0V

5.5V

5.0V

0 50 100 150 200 250 300 350 400 450

4.0

4.5

5.0

5.5

6.0

6.5

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[mΩ],

Drain-Source On-Resistance

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4

1

10

100

500

*Notes:

1. VGS = 0V

2. 250µs Pulse Test

175oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0 25 50 75 100

0

2

4

6

8

10

*Note: ID = 120A

VDS = 30V
VDS = 75V
VDS = 120V

V

GS

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

0.1 1 10 100 200

10

100

1000

10000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. VGS = 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FDH055N15A N-Channel PowerTrench

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

®

MOSFET

FDH055N15A Rev. A4

3

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