Fairchild FDH038AN08A1 service manual

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FDH038AN08A1

N-Channel PowerTrench® MOSFET
75V, 80A, 3.8mΩ

FDH038AN08A1

February 2003

Features

•r

•Q

• Internal Gate Resistor, Rg = 20Ω (Typ.)

• Low Miller Charge

•Low Q

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82690

MOSFET Maximum Ra tings T

= 3.5mΩ (Typ.), V

DS(ON)

(tot) = 125nC (Typ.), V

g

Body Diode

RR

= 10V, ID = 80A

GS

= 10V

GS

SOURCE

DRAIN

TO-247

= 25°C unless otherwise noted

C

GATE

Applications

• 42V Automotiv e Load Control

• Starter / Alternator Systems

• Electronic Power Steering Systems

• Elec tr on ic Valve Train Sys tems

• DC-DC converter s and Off-line UPS

• Distributed P ower Arc hitectures and VRMs

• Primary Switch for 24V and 48V systems

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Sou r c e Voltage 75 V
Gate to Source Voltage ±20 V
Drain Curr e nt

I

D

Continuous (T
Continuous (T

< 158oC, VGS = 10V)

C

= 25oC, VGS = 10V, with R

A

= 30oC/W) 22 A

θJA

80 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse A valanch e Energy (Note 1) 1.17 J
Power dissipation 450 W

o

Derate above 25

C3.0W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

This product ha s been des igned to me et the e xtr eme test c ondit ions and envir onment deman ded by the automot ive indus t ry. For a

All Fairchild Semiconductor prod ucts are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

©2003 Fairchild Semiconductor Corporation

Thermal Resistance Junction t o Case TO-247 0.33
Thermal Resistance Junction to Ambient T O-247 30

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

certification.

FDH038AN08A1 Rev A

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDH038 AN08A1 FDH038 AN08A1 TO-247 Tube N/A 30 unit s

FDH038AN08A1

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Voltag e ID = 250µA, VGS = 0V 75 - - V

V

= 60V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

= 80A, VGS = 10V - 0.0035 0.0038

I

D

I

= 40A, VGS = 6V - 0.0047 0.0071

Drain to S ou r c e On Re si st ance

D

I

= 80A, VGS = 10V,

D

T

= 175oC

J

- 0.0074 0.008

Dynamic Characteristics

C
C
C
Q
Q
Q
Q
Q

ISS
OSS
RSS

g(TOT)
g(TH)
gs
gs2
gd

Input Capacitance
Output Capacitance - 1320 - pF
Reverse Transfer Capacitance - 340 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V
Threshold Gate Charge VGS = 0V to 2V - 17 22 nC
Gate to Source Gate Charg e - 57 - nC
Gate Charge Threshold to Plateau - 42 - nC

V

DD

I

= 80A

D

I

= 1.0m A

g

= 40V

Gate to Drain “Miller” Charge - 30 - nC

- 8665 - pF

125 160 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 88 - ns
Rise Time - 141 - ns
Turn-Off D elay Time - 23 2 - ns
Fall Time - 126 - ns
Turn-Off Time - - 530 ns

(VGS = 10V)

V

= 40V, ID = 80A

DD

V

= 10V, RGS = 2.4Ω

GS

--345ns

Drain-Source Diode Characteristics

I

= 80A - - 1.2 5 V

V

SD

t

rr

Q

RR

Notes:
1: Starting TJ = 25°C, L = 0.65mH, IAS = 60A.

©2003 Fairchild Semiconductor Corporation FDH038AN08A1 Rev. A

Source to Drain Diode Voltage
Reverse Recovery Time ISD = 75A, dISD/dt = 100A/µs- -50ns

Reverse Recovered Charge ISD = 75A, dISD/dt = 100A/µs- -65nC

SD

= 40A - - 1.0 V

I

SD

FDH038AN08A1

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

-5

SINGLE PULSE

-4

10

0.01
10

280

240

200

160

120

80

, DRAIN CURRENT (A)

D

I

40

V

GS

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

10

t, RECTANGULAR PULSE DURATION (s)

-2

10

= 10V

TC, CASE TEMPERATURE (oC)

Case Temperature

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-1

10

CURRENT LIMITED
BY PACKAGE

R

θJA

P

DM

2

x R

θJC

θJC

0

10

=30oC/W

t

1

t

2

+ T

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

3000

TRANSCONDUCTANCE
MAY LIMIT CURRENT

1000

IN THIS REGION

VGS = 10V

, PEAK CURRENT (A)

DM

I

100

50

-5

10

-4

10

-3

10

t, PULSE WIDTH (s)

-2

10

-1

10

TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

175 - T

I = I

25

0

10

C

150

1

10

Figure 4. Peak Current Capability

©2003 Fairchild Semiconductor Corporation FDH038AN08A1 Rev. A