Datasheet FDG8842CZ Datasheet (Fairchild)

tm

FDG8842CZ

Complementary PowerTrench® MOSFET

Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω

FDG8842CZ Complementary PowerTrench

April 2007

Features

Q1: N-Channel

 Max r

 Max r

Q2: P-Channel

 Max r

 Max r

 Very low level gate drive requirements allowing direct

operation in 3V circuits(V

 Very small package outline SC70-6

 RoHS Compliant

= 0.4Ω at VGS = 4.5V, ID = 0.75A

DS(on)

= 0.5Ω at VGS = 2.7V, ID = 0.67A

DS(on)

= 1.1Ω at VGS = –4.5V, ID = –0.41A

DS(on)

= 1.5Ω at VGS = –2.7V, ID = –0.25A

DS(on)

<1.5V)

GS(th)

S2

G2

D1

SC70-6

Pin 1

D2

G1

S1

General Description

These N & P-Channel logic level enhancement mode field effect

transistors are produced using Fairchild’s proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance. This

device has been designed especially for low voltage applica

tions as a replacement for bipolar digital transistors and small

signal MOSFETs. Since bias resistors are not required, this dual

digital FET can replace several different digital transistors, with

different bias resistor values.

S1

G1

D2

Q1

Q2

D1

G2

S2

-

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Thermal Characteristics

R

θJA

R

θJA

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B

Drain to Source Voltage 30 –25 V

Gate to Source Voltage ±12 –8 V

Drain Current -Continuous 0.75 –0.41

-Pulsed 2.2 –1.2

Power Dissipation for Single Operation (Note 1a)
(Note 1b)

Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Resistance, Junction to Ambient Single operation (Note 1a) 350

Thermal Resistance, Junction to Ambient Single operation (Note 1b) 415

.42 FDG8842CZ 7” 8mm 3000 units

= 25°C unless otherwise noted

A

1

0.36

0.30

A

W

°C/W

www.fairchildsemi.com

FDG8842CZ Complementary PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Typ e Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown
Voltage

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On
Resistance

Forward Transconductance

ID = 250μA, VGS = 0V
ID = –250μA, VGS = 0V

ID = 250μA, referenced to 25°C
ID = –250μA, referenced to 25°C

VDS = 24V, V
VDS = –20V, V

GS

GS

= 0V

= 0V

VGS = ±12V, VDS= 0V
VGS = –8V, VDS= 0V

VGS = VDS, ID = 250μA
VGS = VDS, ID = –250μA

ID = 250μA, referenced to 25°C
ID = –250μA, referenced to 25°C

VGS = 4.5V, ID = 0.75A
VGS = 2.7V, ID = 0.67A
VGS = 4.5V, ID = 0.75A ,TJ = 125°C

VGS = –4.5V, ID = –0.41A
VGS = –2.7V, ID = –0.25A
VGS = –4.5V, ID = –0.41A ,TJ = 125°C

VDS = 5V, ID = 0.75A
VDS = –5V, ID = –0.41A

Q1Q2 30

–25

Q1
Q2

Q1
Q2

Q1
Q2

Q1Q20.65

–0.65

Q1
Q2

Q1

Q2

Q1
Q2

V

25

–21

1.0

–0.8

–3.0

1.8

0.25

0.29

0.36

0.87

1.20

1.22

3
8

mV/°C

1

–1

±10

–100μAnA

1.5

–1.5

mV/°C

0.4

0.5

0.6

1.1

1.5

1.9

μA

Ω

S

V

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

(note 2)

Q1
V

= 10V, VGS = 0V, f= 1MHZ

DS

Q2
V

= –10V, VGS = 0V, f= 1MHZ

DS

Q1
VDD = 5V, ID = 0.5A,
VGS = 4.5V,R
Q2

GEN

= 6Ω

VDD = –5V, ID = –0.5A,
VGS = –4.5V,R

GEN

= 6Ω

Q1
V

=4.5V, VDD = 5V, ID = 0.75A

GS

Q2
V

= –4.5V, VDD = –5V, ID = –0.41A

GS

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

90
70

20
30

15
15

120
100

30
40

25
25

4

10

6

12

1

10
29

9

18
56

1

10
64

1.44

1.68

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

16

35

40

1.03

1.20

0.29

0.31

0.17

0.22

©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B

2

www.fairchildsemi.com

FDG8842CZ Complementary PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

θJA

R

θJC

2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.

Maximum Continuous Drain-Source Diode Forward Current

V

= 0V, IS = 0.3A (Note 2)

Source to Drain Diode Forward Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R

Scale 1:1 on letter size paper.

is determined by the user's board design.

θJA

a. 350°C/W when mounted on a
1 in2 pad of 2 oz copper .

GS

V

= 0V, IS = –0.3A (Note 2) Q1Q2

GS

Q1
Q2

0.76

–0.84

b. 415°C/W when mounted on a minimum pad
of 2 oz copper.

0.3

–0.3

1.2

–1.2

A

V

®

MOSFET

©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B

3

www.fairchildsemi.com

FDG8842CZ Complementary PowerTrench

Typical Characteristics (Q1 N-Channel)T

2.20

VGS = 4.5V

1.76

1.32

0.88

, DRAIN CURRENT (A)

0.44

D

I

0.00

0.0 0.5 1.0 1.5 2.0

V

DS

Figure 1.

1.6

ID = 0.75A
V

= 4.5V

GS

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

VGS = 2.7V

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

, DRAIN TO SOURCE VOLTAGE (V)

VGS = 2.0V

VGS =1.8V

VGS = 1.5V

On-Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

2.6

VGS = 1.8V

2.2

1.8

1.4

NORMALIZED

1.0

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

DRAIN TO SOURCE ON-RESISTANCE

0.6

0.00 0.44 0.88 1.32 1.76 2.20

I

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

0.8

ID =0.38A

(Ω)

0.6

, DRAIN TO

0.4

DS(on)

r

SOURCE ON-RESISTANCE

0.2
12345

Figure 4.

o

T

= 25

C

J

VGS, GATE TO SOURCE VOLTAGE (V)

O n - R es i s t a n c e vs G a t e t o

Source Voltage

VGS = 2.0V

V

GS

, DRAIN CURRENT(A)

D

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

TJ = 125oC

= 2.7V

V

= 3.5V

GS

V

= 4.5V

GS

®

MOSFET

2.20

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

1.76

VDD = 5V

1.32

0.88

0.44

, DRAIN CURRENT (A)

D

I

0.00

0.0 0.5 1.0 1.5 2.0 2.5

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B

TJ = 150oC

TJ = 25oC

TJ = -55oC

2

V

= 0V

GS

1

TJ = 150oC

0.1

TJ = 25oC

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55oC

Forward Voltage vs Source Current

4

www.fairchildsemi.com

FDG8842CZ Complementary PowerTrench

Typical Characteristics (Q1 N-Channel)T

5

ID = 0.22A

4

3

2

VDD = 5V

1

, GATE TO SOURCE VOLTAGE(V)

0

GS

V

0.00.20.40.60.81.01.21.4

Figure 7.

Qg, GATE CHARGE(nC)

Gate Charge Characteristics Figure 8.

4

1

S

r

D

0.1

SINGLE PULSE

, DRAIN CURRENT (A)

T

D

I

0.01

0.005

J

R

θJA

T

A

0.1 1 10 100

Figure 9.

D

E

T

I

M

I

L

)

n

o

(

= MAX RATED

O

= 415

C/W

O

= 25

C

VDS, DRAIN to SOURCE VOLTAGE (V)

F o r w ar d B i a s S a fe

Operating Area

VDD = 10V

V

= 15V

DD

100μs

1ms

10ms

100ms

1s
DC

= 25°C unless otherwise noted

J

200

100

10

CAPACITANCE (pF)

f = 1MHz

= 0V

V

GS

1

0.1 1 10

VDS, DRAIN TO SOURCE VOLTAGE (V)

to Source Voltage

50

10

1

, PEAK TRANSIENT POWER (W)

(PK)

P

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 10.

Single Pulse Maximum Power

C

iss

C

oss

C

rss

30

C a p a c i t a n c e v s D r a i n

SINGLE PULSE

O

R

= 415

C/W

θJA

TA = 25OC

t, PULSE WIDTH (s)

Dissipation

®

MOSFET

1

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

θJA

0.05

0.02

0.1

0.01

IMPEDANCE, Z

NORMALIZED THERMAL

0.01

SINGLE PULSE

0.0001 0.001 0.01 0.1 1 10 100 1000

©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

R

= 415oC/W

θJA

t, RECTANGULAR PULSE DURATION (s)

Figure 11. Transient Thermal Response Curve

5

P

DM

x R

θJA

t

1

t

2

2

+ T

θJA

A

www.fairchildsemi.com

FDG8842CZ Complementary PowerTrench

Typical Characteristics (Q2 P-Channel)

1.2

VGS = -4.5V

0.9

0.6

, DRAIN CURRENT (A)

D

0.3

-I

0.0
01234

Figure 13. On Region Characteristics

1.6

ID = -0.41A
V

= -4.5V

GS

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

Figure 15. Normalized On Resistance

vs Junction Temperature

VGS = -3.5V

VGS = -2.7V

VGS = -2.5V

VGS = -2.0V

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

VGS = -1.5V

-VDS, DRAIN TO SOURCE VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (oC)

TJ = 25°C unless otherwise noted

5

VGS = -1.5V

4

VGS = -2.0V

3

2

NORMALIZED

1

DRAIN TO SOURCE ON-RESISTANCE

0

0.0 0.3 0.6 0.9 1.2

Figure 14. Normalized on-Resistance vs Drain

Current and Gate Voltage

4

(Ω)

3

2

, DRAIN TO

DS(on)

r

1

SOURCE ON-RESISTANCE

0

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

ID =-0.22A

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 16. On-Resistance vs Gate to

Source Voltage

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

VGS = -2.5V

-ID, DRAIN CURRENT(A)

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

VGS = -2.7V

VGS = -3.5V

VGS = -4.5V

TJ = 125oC

o

T

= 25

J

®

MOSFET

C

0.6

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

VDS = -5V

0.4

0.2

, DRAIN CURRENT (A)

D

-I

0.0

0.5 1.0 1.5 2.0 2.5

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 17. Transfer Characteristics

©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B

TJ = -55oC

TJ = 150oC

TJ = 25oC

3

V

= 0V

GS

1

TJ = 150oC

0.1

TJ = 25oC

0.01

, REVERSE DRAIN CURRENT (A)

S

-I

0.001

0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

TJ = -55oC

Figure 18. Source to Drain Diode

Forward Voltage vs Source Current

6

www.fairchildsemi.com

FDG8842CZ Complementary PowerTrench

Typical Characteristics(Q2 P-Channel) T

5

ID = -0.41A

4

3

2

1

, GATE TO SOURCE VOLTAGE(V)

GS

-V

0

0.0 0.4 0.8 1.2 1.6

Figure 19. Gate Charge Characteristics

3

1

r

D

0.1

, DRAIN CURRENT (A)

D

-I

0.01

0.3

VDD = -5V

V

DD

Qg, GATE CHARGE(nC)

VDD = -10V

= -15V

ED

T

I

M

I

L

)

n

o

(

S

SINGLE PULSE

= MAX RATED

T

J

o

= 415

θJA

C/W

o

C

R

TA = 25

110

-VDS, DRAIN to SOURCE VOLTAGE (V)

1ms

10ms

100ms

1s

DC

50

F i g u r e 2 1 . F o r w a r d B i a s S a f e

Operating Area

= 25°C unless otherwise noted

J

200

100

10

CAPACITANCE (pF)

f = 1MHz

= 0V

V

GS

1

0.1 1 10

Figure 20. Capacitance vs Drain

20

10

1

, PEAK TRANSIENT POWER (W)

(PK)

P

0.1

0.001 0.01 0.1 1 10 100 1000

Fig ure 22. S ingle Pu lse Maxi mum Pow er

C

C

-VDS, DRAIN TO SOURCE VOLTAGE (V)

to Source Voltage

SINGLE PULSE

R

= 415

θJA

TA = 25OC

t, PULSE WIDTH (s)

Dissipation

C

iss

oss

rss

25

®

MOSFET

O

C/W

1

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

θJA

0.02

0.01

0.1

IMPEDANCE, Z

NORMALIZED THERMAL

0.01

-3

10

SINGLE PULSE

©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B

-2

10

-1

10

t, RECTANGULAR PULSE DURATION (s)

0

10

Figure 23. Transient Thermal Response Curve

7

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

R

= 415oC/W

θJA

1

10

P

DM

t

1

t

2

2

x R

+ T

θJA

θJA

A

2

10

3

10

www.fairchildsemi.com

TRADEMARKS

tm

tm

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

®

ACEx
Across the board. Around the world™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
CTL™
Current Transfer Logic™
DOME™

2

E

CMOS™

EcoSPARK

®

EnSigna™
FACT Quiet Series™

®

FACT

®

FAST
FASTr™
FPS™

®

FRFET
GlobalOptoisolator™
GTO™

HiSeC™

i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
MICROCOUPLER™
MicroPak™
MICROWIRE™
Motion-SPM™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR

®

®

PACMAN™
PDP-SPM™
POP™
Power220
Power247

®

®

PowerEdge™
PowerSaver™

Power-SPM™
PowerTrench
Programmable Active Droop™
QFET

®

®

QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
ScalarPump™
SMART START™

®

SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
The Power Franchise

®

™

TinyBoost™
TinyBuck™
TinyLogic

®

TINYOPTO™
TinyPower™
TinyWire™
TruTranslation™
µSerDes™

®

UHC
UniFET™
VCX™
Wire™

FDG8842CZ Complementary PowerTrench

®

MOSFET

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided in
the labeling, can be reasonably expected to result in a significant
injury of the user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification

Advance Information

Product Status

Formative or In Design

Preliminary First Production This datasheet contains preliminary data; supplementary data will

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete

Not In Production

2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.

Definition

This datasheet contains the design specifications for product
development. Specifications may change in any manner
without notice.

be published at a later date. Fairchild Semiconductor reserves the
right to make changes at any time without notice to improve
design.

Semiconductor reserves the right to make changes at any time
without notice to improve design.

This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor.The datasheet is printed
for reference information only.

Rev. I26

©2007 Fairchild Semiconductor Corporation

www.fairchildsemi.com