Fairchild FDG6342L service manual
tm
FDG6342L
Integrated Load Switch
FDG6342L Integrated Load Switch
March 2008
Features
Max r
Max r
Max r
Max r
Control MOSFET (Q1) includes Zener protection for ESD
ruggedness ( >4KV Human body model)
High performance trench technology for extremely low r
Compact industry standard SC70-6 surface mount package
RoHS Compliant
= 150mΩ at VGS = 4.5V, ID = –1.5A
DS(on)
= 195mΩ at VGS = 2.5V, ID = –1.3A
DS(on)
= 280mΩ at VGS = 1.8V, ID = –1.1A
DS(on)
= 480mΩ at VGS = 1.5V, ID = –0.9A
DS(on)
DS(on)
Q2
Vin,R1
4
ON/OFF
R1,C1
Pin 1
5
6
General Description
This device is particularly suited for compact power
management in portable electronic equipment where 2.5V to 8V
input and 1.5A output current capability are needed. This load
switch integrates a small N-Channel power MOSFET (Q1) that
drives a large P-Channel power MOSFET (Q2) in one tiny
SC70-6 package.
Applications
Power management
Load switch
Equivalent Circuit
IN
ON/OFF
V
DROP
OUT
Q1
3
2
1
Vout,C1
Vout,C1
R2
SC70-6
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
IN
V
ON/OFF
I
Load
P
D
, T
T
J
STG
Thermal Characteristics
R
θJA
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
©2008 Fairchild Semiconductor Corporation
FDG6342L Rev.B1
Gate to Source Voltage (Q2) ±8 V
Gate to Source Voltage (Q1) –0.5 to 8 V
Load Current -Continuous (Note 2) –1.5
-Pulsed (Note 2) –6
Power Dissipation for Single Operation (Note 1a) 0.36
(Note 1b) 0.3
Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Resistance, Junction to Ambient Single operation (Note 1a) 350
Thermal Resistance, Junction to Ambient Single operation (Note 1b) 415
.2L FDG6342L SC70-6 7’’ 8mm 3000units
See Application Circuit
= 25°C unless otherwise noted
A
1
A
W
°C/W
www.fairchildsemi.com
FDG6342L Integrated Load Switch
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
IN
I
Load
I
FL
I
RL
On Characteristics
V
ON/OFF(th)
r
DS(on)
VIN Breakdown Voltage ID = -250µA, V
Zero Gate Voltage Drain Current VIN = -6.4V, V
Leakage Current, Forward VIN = 8V, V
ON/OFF
Leakage Current, Reverse VIN = –8V, V
(note 2)
Gate Threshold Voltage VIN = V
Static Drain to Source On Resistance (Q2)
Static Drain to Source On Resistance (Q1)
ON/OFF
VIN = 4.5V, ID = –1.5A 125 150
VIN = 2.5V, ID = –1.3A 150 195
VIN = 1.8V, ID = –1.1A 200 280
VIN = 1.5V, ID = –0.9A 250 480
VIN = 4.5V, ID = 0.4A 2.6 4.0
VIN = 2.7V, ID = 0.2A 3.3 5.0
= 0V 8 V
ON/OFF
= 0V –1 µA
ON/OFF
= 0V 10 µA
= 0V –10 µA
ON/OFF
, ID = -250µA 0.65 0.8 1.5 V
Drain-Source Diode Characteristics
I
S
V
SD
NOTES:
1. R
is determined with the device m o unt ed on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
Maximum Continuous Drain to Source Diode Forward Current –0.25 V
Source to Drain Diode Forward Voltage V
= 0V, IS = –0.25A (Note 2) –0.6 –1.2 V
ON/OFF
is guaranteed by design while R
θJC
θJA
is determined by
mΩ
Ω
a. 350°C/W when mounted on a
2
pad of 2 oz copper .
1 in
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDG6342LLoad Switch Application circuit
Q2
IN
R1
Q1
ON/OFF
External Component Recommendation:
For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030
OUT
C1
LOAD
R2
b. 415°C/W when mounted on
a minimum pad of 2 oz copper.
©2008 Fairchild Semiconductor Corporation
FDG6342L Rev.B1
2
www.fairchildsemi.com
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