FDG6301N
Dual N-Channel, Digital FET
General Description Features
These dual N-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. This device has been
designed especially for low voltage applications as a
replacement for bipolar digital transistors and small
signal MOSFETs.
SC70-6
SOT-23
SuperSOTTM-6
July 1999
25 V, 0.22 A continuous, 0.65 A peak.
R
R
Very low level gate drive requirements allowing direct
operation in 3 V circuits (V
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
Compact industry standard SC70-6 surface mount
package.
SuperSOTTM-8
= 4 Ω @ VGS= 4.5 V,
DS(ON)
= 5 Ω @ VGS= 2.7 V.
DS(ON)
< 1.5 V).
GS(th)
SO-8
SOT-223
S2
1 or 4
2 or 5
*
6 or 3
5 or 2
D1
G2
.01
D2
SC70-6
*The pinouts are symmetrical; pin 1 and 4 are interchangeable.
Units inside the carrier can be of either orientation and will not affect the functionality of the device.
Absolute Maximum Ratings T
Symbol Parameter FDG6301N Units
V
DSS
V
GSS
I
D
P
D
TJ,T
ESD Electrostatic Discharge Rating MIL-STD-883D
THERMAL CHARACTERISTICS
R
θJA
Drain-Source Voltage 25 V
Gate-Source Voltage 8 V
Drain/Output Current - Continuous 0.22 A
Maximum Power Dissipation (Note 1) 0.3 W
Operating and Storage Temperature Range -55 to 150 °C
STG
Human Body Model(100 pF / 1500 Ω)
Thermal Resistance, Junction-to-Ambient 415 °C/W
G1
S1
= 25°C unless otherwise noted
A
- Pulsed 0.65
3 or 6
6.0 kV
4 or 1
*
FDG6301N Rev.E1
Electrical Characteristics (T
= 25 OC unless otherwise noted )
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
∆BV
I
DSS
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 25 V
Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C 25 mV / oC
/∆T
J
Zero Gate Voltage Drain Current VDS = 20 V, V
= 0 V 1 µA
GS
TJ = 55°C 10 µA
I
GSS
Gate - Body Leakage Current VGS = 8 V, V
= 0 V 100 nA
DS
ON CHARACTERISTICS (Note 2)
V
∆V
R
GS(th)
GS(th)
DS(ON)
Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.65 0.85 1.5 V
Gate Threshold Voltage Temp.Coefficient ID = 250 µA, Referenced to 25 o C -2.1 mV / oC
/∆T
J
Static Drain-Source On-Resistance VGS = 4.5 V, ID = 0.22 A 2.6 4
Ω
TJ =125°C 5.3 7
VGS = 2.7 V, ID = 0.19 A 3.7 5
I
g
D(ON)
FS
On-State Drain Current VGS = 4.5 V, VDS = 5 V 0.22 A
Forward Transconductance VDS = 5 V, ID= 0.22 A 0.2 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = 10 V, VGS = 0 V,
Output Capacitance 6 pF
f = 1.0 MHz
9.5 pF
Reverse Transfer Capacitance 1.3 pF
SWITCHING CHARACTERISTICS (Note 2)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 5 V, ID = 0.5 A,
Turn - On Rise Time 4.5 10 ns
VGS = 4.5 V, R
GEN
= 50 Ω
5 10 ns
Turn - Off Delay Time 4 8 ns
Turn - Off Fall Time 3.2 7 ns
Total Gate Charge VDS = 5 V, ID = 0.22 A,
Gate-Source Charge 0.12 nC
VGS = 4.5 V
0.29 0.4 nC
Gate-Drain Charge 0.03 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Notes:
1. R
JA
θ
by design while R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Maximum Continuous Source Current 0.25 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.25 A (Note 2) 0.8 1.2 V
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
is determined by the user's board design. R
CA
θ
= 415OC/W on minimum pad mounting on FR-4 board in still air.
JA
θ
is guaranteed
JC
θ
FDG6301N Rev.E1
Typical Electrical Characteristics
0.5
0.4
0.3
0.2
0.1
D
I , DRAIN-SOURCE CURRENT (A)
V =4.5V
GS
3.5V
3.0V
2.7V
2.5V
2.0V
0
0 1 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
1.8
I = 0.22A
D
1.6
V = 4.5V
GS
1.4
1.2
1
DS(ON)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
5
4.5
4
V = 2.5V
GS
2.7V
3.0V
3.5
3.5V
3
DS(ON)
R , NORMALIZED
2.5
DRAIN-SOURCE ON-RESISTANCE
2
0 0.1 0.2 0.3 0.4
I , DRAIN CURRENT (A)
D
4.0V
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
20
16
12
8
T =125°C
4
DS(ON)
R , ON-RESISTANCE(OHM)
0
1 2 3 4 5
V ,GATE TO SOURCE VOLTAGE (V)
GS
A
25°C
4.5V
5.0V
I = 0.10A
D
Figure 3. On-Resistance Variation
with Temperature.
0.2
V = 5V
DS
0.15
0.1
0.05
D
I , DRAIN CURRENT (A)
0
0.5 1 1.5 2 2.5 3
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics.
T = -55°C
J
25°C
125°C
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0.4
V = 0V
GS
0.1
T = 125°C
0.01
0.001
S
I , REVERSE DRAIN CURRENT (A)
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
V , BODY DIODE FORWARD VOLTAGE (V)
SD
J
25°C
-55°C
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDG6301N Rev.E1
Typical Electrical Characteristics ( continued)
6
I = 0.22A
D
5
4
3
2
1
GS
V , GATE-SOURCE VOLTAGE (V)
0
0 0.1 0.2 0.3 0.4 0.5 0.6
V = 5V
DS
Q , GATE CHARGE (nC)
g
10V
Figure 7. Gate Charge Characteristics.
1
0.3
RDS(ON) LIMIT
0.1
V = 4.5V
GS
SINGLE PULSE
D
0.03
I , DRAIN CURRENT (A)
0.01
JA
R = 415 °C/W
θ
T = 25°C
A
0.4 0.8 2 5 10 25 40
V , DRAIN-SOURCE VOLTAGE (V)
DS
100ms
1s
10s
DC
10ms
30
15
C
8
5
CAPACITANCE (pF)
f = 1 MHz
3
V = 0 V
GS
2
0.1 0.3 1 3 10 25
V , DRAIN TO SOURCE VOLTAGE (V)
DS
iss
C
oss
C
rss
Figure 8. Capacitance Characteristics.
50
40
30
20
POWER (W)
10
0
0.0001 0.001 0.01 0.1 1 10 200
SINGLE PULSE TIME (SEC)
SINGLE PULSE
R =415°C/W
JA
θ
T = 25°C
A
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
0.5
0.2
0.2
0.1
0.1
0.05
0.02
0.01
r(t), NORMALIZED EFFECTIVE
0.005
TRANSIENT THERMAL RESISTANCE
0.002
0.05
0.02
0.01
Single Pulse
0.0001 0.001 0.01 0.1 1 10 100 200
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1.
Transient thermal response will change depending on the circuit board design.
t , TIME (sec)
1
R (t) = r(t) * R
JA
θ
R =415 °C/W
JA
θ
P(pk)
t
1
t
2
T - T = P * R (t)
J
A
Duty Cycle, D = t / t
JA
θ
JA
θ
1 2
FDG6301N Rev.E1
SC70-6 Tape and Reel Data and Package Dimensions
SC70-6 Packaging
Configuration: Figure 1.0
SC70-6 Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
Customized Label
Standard
(no flow code)
184x187x47 343x343x64
0.0055 0.0055
0.1140 0.3960
D87Z
TNR
3,000 10,000
7" Dia
9,000 30,000
TNR
13"
Antistatic Cover Tape
F63TNR
Label
Static Dissipative
Embos s e d Car rier Tape
Intermediate box for D87Z Option
Packaging Description:
SC70-6 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 uni ts p er 7 " or 17 7cm di amet er re el. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13"
or 330cm diam eter reel. T his a nd some othe r opti ons ar e
described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a pizza box (illustrated in f igure 1.0) made of
recyclable corrugated brown paper with a Fairchild logo
printi ng. One pizza box contain s three r eels maximu m.
And these pizza boxes are placed inside a barcode
labeled shipping box which comes in different sizes
depending on the number of parts shipped.
21 21 21 21
SC70-6 Unit Orientatio n
343mm x 342mm x 64mm
21
Pin 1
F63TNR Barcode Label
184mm x 187mm x 47mm
Pizza Box for Standar d Option
SC70-6 Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Trailer Tape
300mm minimum or
75 empty pockets
F63TNR
Label
F63TNR
Label
Components
F63TNR Label sample
LOT: CBVK741B019
FSID: FDG6302P
D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:
QTY: 3000
SPEC:
N/F: F (F63TNR)3
Leader Tape
500mm minimum or
125 empty pockets
August 1999, Rev. C
SC70-6 Tape and Reel Data and Package Dimensions, continued
SC70-6 Embossed Carrier Tape
Configuration: Figure 3.0
T
K0
Wc
B0
P0
D0
E1
F
W
E2
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
SC70-6
(8mm)
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
SC70-6 Reel Configuration: Figure 4.0
A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
2.24
2.34
8.0
1.55
1.125
1.75
6.25
+/-0.10
+/-0.10
+/-0.3
+/-0.05
+/-0.125
+/-0.10
rotational and lateral movement requirements (see sketches A, B, and C).
B0
20 deg maximum component rotation
Sketch A (Side or Front Sectional View)
Component Rotation
3.50
min
+/-0.05
20 deg maximum
A0
Sketch B (Top View)
Component Rotation
W1 Measured at Hub
4.0
+/-0.1
Typical
component
cavity
center line
Typical
component
center line
Dim A
Max
4.0
+/-0.1
1.20
0.255
+/-0.150
5.2
+/-0.3
0.5mm
maximum
+/-0.10
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
0.06
+/-0.02
Dim A
max
Tape Size
8mm 7" Dia
8mm 13" Dia
Reel
Option
Dim N
Diameter Option
7"
See detail AA
B Min
Dim C
13" Diameter Option
See detail AA
W2 max Measured at Hub
Dim D
W3
min
DETAIL AA
Dimensions are in inches and millimeters
Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
7.00
0.059
177.8
13.00
330
1.5
0.059
1.5
0.512 +0.020/-0.008
13 +0.5/-0.2
0.512 +0.020/-0.008
13 +0.5/-0.2
0.795
2.165550.331 +0.059/-0.000
20.2
0.795
4.00
20.2
100
8.4 +1.5/0
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.567
14.4
0.311 – 0.429
7.9 – 10.9
0.311 – 0.429
7.9 – 10.9
July 1999, Rev. C
SC70-6 Tape and Reel Data and Package Dimensions, continued
SC70-6 (FS PKG Code 76)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0055
September 1998, Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
2
E
CMOS
TM
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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