Fairchild FDG410NZ service manual
FDG410NZ
Single N-Channel PowerTrench® MOSFET
20 V, 2.2 A, 70 mΩ
Features
Max r
Max r
Max r
Max r
HBM ESD protection level > 2 kV (Note 3)
High performance trench technology for extremely low r
High power and current handling capability
Fast switching speed
Low gate charge
RoHS Compliant
= 70 mΩ at VGS = 4.5 V, ID = 2.2 A
DS(on)
= 77 mΩ at VGS = 2.5 V, ID = 2.0 A
DS(on)
= 87 mΩ at VGS = 1.8 V, ID = 1.8 A
DS(on)
= 115 mΩ at VGS = 1.5 V, ID = 1.5 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized use in small switching regulaters, providing an
extremely low r
DS(on)
Applications
DC/DC converter
Power management
Load switch
FDG410NZ Single N-Channel PowerTrench
March 2009
and gate charge (Qg) in a small package.
®
MOSFET
S
D
D
1
D
D
2
D
6
D
5
G
D
D
3
G
S
4
SC70-6
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage 20 V
Gate to Source Voltage ±8 V
-Continuous TA = 25 °C (Note 1a) 2.2
-Pulsed 6.0
Power Dissipation TA = 25 °C (Note 1a) 0.42
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C (Note 1b) 0.38
A
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 300
Thermal Resistance, Junction to Ambient (Note 1b) 333
Package Marking and Ordering Information
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
.41 FDG410NZ SC70-6 7 ” 8 mm 3000 units
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
1
www.fairchildsemi.com
FDG410NZ Single N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 20 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 16 V, V
Gate to Source Leakage Current VGS = ±8 V, V
I
= 250 µA, referenced to 25 °C 17 mV/°C
D
= 0 V 1 µA
GS
= 0 V ±10 µA
DS
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 0.4 0.7 1.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 µA, referenced to 25 °C -3 mV/°C
D
V
= 4.5 V, ID = 2.2 A 50 70
GS
= 2.5 V, ID = 2.0 A 56 77
V
GS
= 1.8 V, ID = 1.8 A 67 87
V
GS
= 1.5 V, ID = 1.5 A 83 115
V
GS
= 4.5 V, ID = 2.2 A,
V
GS
T
= 125 °C
J
71 100
Forward Transconductance VDD = 5 V, ID = 2.2 A 11 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 70 95 pF
Reverse Transfer Capacitance 45 70 pF
= 10 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 2.8 Ω
400 535 pF
mΩ
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Rise Time 2.3 10 ns
Turn-Off Delay Time 18 33 ns
Fall Time 2.3 10 ns
Total Gate Charge
Gate to Source Charge 0.6 nC
Gate to Drain “Miller” Charge 1.0 nC
= 10 V, ID = 2.2 A,
V
DD
V
= 4.5 V, R
GS
= 4.5 V, VDD = 10 V,
V
GS
I
= 2.2 A
D
GEN
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boar d of FR-4 mate ria l. R
θJA
the user's board design.
Maximum Continuous Drain-Source Diode Forward Current 0.35 A
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 2.5 10 nC
a. 300 °C/W when mounted
on a 1 in
= 0 V, IS = 0.35 A (Note 2) 0.6 1.2 V
GS
= 2.2 A, di/dt = 100 A/µs
I
F
2
pad of 2 oz copper.
= 6 Ω
5.3 11 ns
5.1 7.2 nC
11 20 ns
is guaranteed by design whil e R
θJC
b. 333 °C/W when mounted on a
minimum pad of 2 oz copper.
is determined by
θJA
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
2
www.fairchildsemi.com
FDG410NZ Single N-Channel PowerTrench
Typical Characteristics T
6
VGS = 4.5 V
5
4
3
2
DRAIN CURRENT (A)
,
D
I
1
0
0 0.2 0.4 0.6 0.8 1.0
V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1.
1.6
ID = 2.2 A
V
GS
1.4
On Region Characteristics Figure 2.
= 4.5 V
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
T
,
JUNCTION TEMPERATURE
J
VGS = 3.5 V
VGS = 2.5 V
VGS = 1.8 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
= 25 °C unless otherwise noted
J
VGS = 1.5 V
o
(
C
)
2.5
V
= 1.5 V
GS
2.0
= 3.5 V
VGS = 1.8 V
V
V
1.5
V
NORMALIZED
GS
1.0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
DRAIN TO SOURCE ON-RESIST AN CE
0.5
123456
I
,
DRAIN CURRENT (A)
D
Norma l i z e d O n - Resistance
vs Drain Current and Gate Voltage
180
)
Ω
160
m
(
140
120
DRAIN TO
,
100
DS(on)
r
80
60
SOURCE ON-RESISTANCE
40
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
,
GATE TO SOURCE VOLTAGE (V)
GS
PULSE DURA TION = 80 µs
DUTY CYCLE = 0.5% MAX
ID = 1.1 A
TJ = 125 oC
TJ = 25 oC
GS
GS
= 2.5 V
= 4.5 V
®
MOSFET
Fi g ure 3 . Norm a lize d On Re sista n ce
vs Junction Temperature
6
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
5
V
= 5 V
DS
4
3
2
, DRAIN CURRENT (A)
D
I
1
0
0.0 0.5 1.0 1.5 2.0
TJ = 125 oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
Figure 4.
On-Resistanc e vs Gate to
Source Voltage
6
V
= 0 V
GS
1
TJ = 125 oC
TJ = 25 oC
0.1
TJ = 25 oC
, REVERSE DRAIN CURRENT (A)
S
TJ = -55 oC
I
0.01
0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Source to Dr ai n Diode
TJ = -55 oC
Forward Voltage vs Source Current
3
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