Fairchild FDG327NZ service manual
FDG327NZ
20V N-Channel PowerTrench MOSFET
FDG327NZ
August 2008
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
Features
• 1.5 A, 20 V. R
R
= 90 mΩ @ VGS = 4.5 V.
DS(ON)
= 100 mΩ @ VGS = 2.5 V
DS(ON)
R
= 140 mΩ @ VGS = 1.8 V
DS(ON)
in small switching regulators, providing an extremely
low R
Applications
• DC/DC converter
• Power management
• Load switch
and gate charge (QG) in a small package.
DS(ON)
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability.
S
D
D
G
Pin 1
SC70-6
Absolute Maximum Ratings T
D
D
=25oC unless otherwise noted
A
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 20 V
Gate-Source Voltage
± 8
Drain Current – Continuous (Note 1a) 1.5 A
– Pulsed 6
Power Dissipation for Single Operation (Note 1a) 0.42 W
(Note 1b)
0.38
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 300
Thermal Resistance, Junction-to-Ambient (Note 1b) 333
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.37 FDG327NZ 7’’ 8mm 3000 units
2008 Fairchild Semiconductor Corporation
°C/W
FDG327NZ Rev C1(W)
Electrical Characteristics T
FDG327NZ
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
20 V
11
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
Gate–Body Leakage
VGS = ± 8 V, VDS = 0 V ±10 µA
mV/°C
µA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 1.5 A
VGS = 2.5 V, ID = 1.4 A
VGS = 1.8 V, ID = 1.2 A
VGS = 4.5 V, ID = 1.5 A, TJ =125°C
0.4 0.7 1.5 V
–2
68
77
90
86
90
100
140
123
mV/°C
mΩ
On–State Drain Current VGS = 4.5V, VDS = 5 V 3 A
Forward Transconductance VDS = 10 V, ID = 1.5 A 2.2 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance 412 pF
Output Capacitance 81 pF
Reverse Transfer Capacitance
Gate Resistance
VDS = 10 V, V
GS
= 0 V
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
44 pF
1.9
Ω
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 6.2 13 ns
Turn–On Rise Time 2.3 10 ns
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, R
GEN
= 6 Ω
Turn–Off Delay Time 18 33 ns
Turn–Off Fall Time
Total Gate Charge 4.2 6 nC
Gate–Source Charge 0.4 nC
VDS = 10 V, ID = 1.5 A,
VGS = 4.5 V
Gate–Drain Charge
2.9 10 ns
1 nC
Drain–Source Diode Characteristics and Maximum Ratings
V
SD
t
rr
Q
rr
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 0.32 A (Note 2) 0.6 1.2 V
Diode Reverse Recovery Time IF = 1.5 A, diF/dt = 100 A/µs 4 nS
Diode Reverse Recovery Charge 2 nC
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
a) 300°C/W when
mounted on a 1in2 pad
of 2 oz copper.
b) 333°C/W when mounted
on a minimum pad of 2 oz
copper.
FDG327NZ Rev C1(W)
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