Fairchild FDG1024NZ service manual

FDG1024NZ

Dual N-Channel PowerTrench® MOSFET

20 V, 1.2 A, 175 mΩ

Features

 Max r  Max r  Max r  Max r  HBM ESD protection level >2 kV (Note 3)  Very low level gate drive requirements allowing operation in

1.5 V circuits (V

 Very small package outline SC70-6  RoHS Compliant

= 175 mΩ at VGS = 4.5 V, ID = 1.2 A

DS(on)

= 215 mΩ at VGS = 2.5 V, ID = 1.0 A

DS(on)

= 270 mΩ at VGS = 1.8 V, ID = 0.9 A

DS(on)

= 389 mΩ at VGS = 1.5 V, ID = 0.8 A

DS(on)

< 1 V)

GS(th)

General Description

This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

FDG1024NZ Dual N-Channel Power Trench

June 2010

MOSFET

1 2

6 5

D1 G2

SC70-6

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 20 V Gate to Source Voltage ±8 V

-Continuous TA = 25°C (Note 1a) 1.2

-Pulsed 6 Power Dissipation TA = 25°C (Note 1a) 0.36 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25°C (Note 1b) 0.30

Thermal Characteristics

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 350 Thermal Resistance, Junction to Ambient (Note 1b) 415

Package Marking and Ordering Information

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

.4N FDG1024NZ SC70-6 7 ” 8 mm 3000 units

www.fairchildsemi.com

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

∆BV ∆T

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 20 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 16 V, V Gate to Source Leakage Current VGS = ±8 V, V

= 250 µA, referenced to 25 °C 14 mV/°C

= 0 V 1 µA

= 0 V ±10 µA

On Characteristics

GS(th)

∆V ∆T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 0.4 0.8 1.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 µA, referenced to 25 °C -3 mV/°C

= 4.5 V, ID = 1.2 A 160 175

= 2.5 V, ID = 1.0 A 185 215

= 1.8 V, ID = 0.9 A 232 270

= 1.5 V, ID = 0.8 A 321 389

= 4.5 V, ID = 1.2 A,

=125 °C

220 259

Forward Transconductance VDD = 5 V, ID = 1.2 A 4 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 25 35 pF Reverse Transfer Capacitance 20 25 pF

= 10 V, VGS = 0 V,

f = 1 MHz

Gate Resistance 4.6 Ω

115 150 pF

FDG1024NZ Dual N-Channel Power Trench

mΩ

MOSFET

Switching Characteristics

d(on)

d(off)

Q Q Q

g gs gd

Turn-On Delay Time Rise Time 1.7 10 ns Turn-Off Delay Time 11 19 ns Fall Time 1.5 10 ns Total Gate Charge Gate to Source Charge 0.3 nC Gate to Drain “Miller” Charge 0.4 nC

= 10 V, ID = 1.2 A,

= 4.5 V, R

= 4.5 V, VDD = 10 V,

= 1.2 A

GEN

Drain-Source Diode Characteristics

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 m ateri al. R

θJA

the user's board design.

Maximum Continuous Drain-Source Diode Forward Current 0.3 A Source to Drain Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge 1.9 10 nC

a. 350 °C/W when mounted

on a 1 in

pad of 2 oz copper.

= 0 V, IS = 0.3 A (Note 2) 0.7 1.2 V

= 1.2 A, di/dt = 100 A/µs

= 6 Ω

is guaranteed by design while R

θJC

b. 415 °C/W when mounted on a minimum pad of 2 oz copper.

3.7 10 ns

1.8 2.6 nC

10 20 ns

is determined by

θJA

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

10 Fairchild Semiconductor Corporation

www.fairchildsemi.com

Typical Characteristics T

= 25 °C unless otherwise noted

FDG1024NZ Dual N-Channel Power Trench

VGS = 4.5 V VGS = 3.5 V

VGS = 2.5 V

PULSE DURATION = 80 µs

DRAIN CURRENT (A)

0 0.4 0.8 1.2 1.6 2.0

DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

1.6

ID = 1.2 A V

1.4

On-Region Characteristics Figure 2.

= 4.5 V

DUTY CYCLE = 0.5% MAX

VGS = 1.8 V

VGS = 1.5 V

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

JUNCTION TEMPERATURE

(

)

Figu r e 3. Norm a lized On - R esista n c e

vs Junction Temperature

2.5

= 1.5 V

VGS = 1.8 V

= 2.5 V

2.0

1.5

NORMALIZED

1.0

PULSE DURATION = 80 µs

DRAIN TO SOURCE ON-RESISTANCE

0.5 0123456

DUTY CYCLE = 0.5% MAX

DRAIN CURRENT (A)

VGS = 3.5 V

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

600

)

Ω

500

400

300

DRAIN TO

200

DS(on)

100

SOURCE ON-RESISTANCE

1.01.52.02.53.03.54.04.5

GATE TO SOURCE VOLTAGE (V)

Figure 4.

On-Resista nce vs Gate to

PULSE DURA TION = 80 µs DUTY CYCLE = 0.5% MAX

ID = 1.2 A

TJ = 125 oC

TJ = 25 oC

Source Voltage

= 4.5 V

MOSFET

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

= 5 V

, DRAIN CURRENT (A)

TJ = 125 oC

01234

VGS, GATE TO SOURC E V OLTAGE (V)

Figure 5. Transfer Characteristics

10 Fairchild Semiconductor Corporation

TJ = -55 oC

TJ = 25 oC

= 0 V

TJ = 125 oC

TJ = 25 oC

0.1

, REVERSE DRAIN CURRENT (A)

0.01

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drain Diode

TJ = -55 oC

Forward Voltage vs Source Current

www.fairchildsemi.com

+ 4 hidden pages