Fairchild FDD8N50NZ service manual

FDD8N50NZ N-Channel MOSFET

FDD8N50NZ

N-Channel MOSFET

500V, 6.5A, 0.85Ω

Features

•R

• Low Gate Charge ( Typ. 14nC)

• Low C

• Fast Switching

• 100% Avalanche Tested

• Improve dv/dt Capability

• ESD Improved Capability

• RoHS Compliant

= 0.77Ω ( Typ.) @ VGS = 10V, ID = 3.25A

DS(on)

( Typ. 5pF)

rss

Description

This N-Channel enhancement mode power field effect transistors
are produced using Fairchild's proprietary, planar stripe, DMOS
technology.

This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.

August 2010

UniFET-II

D

D

TM

G

S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
P

D

, T

T

J

STG

T

L

*Drain current limited by maximum junction temperature

Drain to Source Voltage 500 V
Gate to Source Voltage ±25 V

Drain Current
Drain Current - Pulsed (Note 1) 26 A

Single Pulsed Avalanche Energy (Note 2) 287 mJ
Avalanche Current (Note 1) 6.5 A
Repetitive Avalanche Energy (Note 1) 9 mJ

Power Dissipation
Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

D-PAK

= 25oC unless otherwise noted

C

-Continuous (T

-Continuous (T

(T

- Derate above 25

D

G

G

S

S

= 25oC) 6.5

C

= 100oC) 3.9

C

= 25oC) 90 W

C

o

C0.7W/

300

o

o

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.4
Thermal Resistance, Junction to Ambient 62.5

o

C/W

A

o

C

C
C

©2010 Fairchild Semiconductor Corporation
FDD8N50NZ Rev. A

www.fairchildsemi.com1

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD8N50NZ FDD8N50NZ

70 D-PAK 380mm 16mm 2500

FDD8N50NZ N-Channel MOSFET

Electrical Characteristics T

S

ymbol Parameter Test Conditions Min. Typ. Max. Units

= 25oC unless otherwise noted

C

Off Characteristics

BV
ΔBV

ΔT
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 500 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±25V, V

I

= 250μA, Referenced to 25oC-0.5-V/

D

V

= 500V, V

DS

= 400V, TC = 125oC--10

V

DS

= 0V - - 1

GS

= 0V - - ±10 μA

DS

On Characteristics

V
R
g

FS

GS(th)
DS(on)

Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 3.25A - 0.77 0.85 Ω
Forward Transconductance VDS = 20V, ID = 3.25A (Note 4) -6.3-S

Dynamic Characteristics

C
C
C
Q
Q
Q

iss
oss
rss
g(tot)
gs
gd

Input Capacitance
Output Capacitance - 80 105 pF
Reverse Transfer Capacitance - 5 8 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 400V,ID = 6.5A

Gate to Source Gate Charge - 4 - nC
Gate to Drain “Miller” Charge - 6 - nC

DS

V

= 10V

GS

(Not e 4, 5)

- 565 735 pF

-1418nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

= 250V, ID = 6.5A

Turn-On Rise Time - 34 80 ns
Turn-Off Delay Time - 43 95 ns
Turn-Off Fall Time - 27 60 ns

V

DD

= 25Ω, VGS = 10V

R

G

(Note 4, 5)

-1745ns

μA

o

C

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 13.6mH, I

3. I

≤ 6.5A, di/dt ≤ 200A/μs, VDD ≤ BV

SD

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDD8N50NZ Rev. A

Maximum Continuous Drain to Source Diode Forward Current - - 8 A
Maximum Pulsed Drain to Source Diode Forward Current - - 30 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 1.43 - μC

= 6.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

/dt = 100A/μs (Note 4)

dI

F

= 6.5A - - 1.4 V

SD

= 6.5A

SD

2

- 228 - ns

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Typical Performance Characteristics

0.03 0.1 1 10 20

0.03

0.1

1

10

30

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

V

GS

= 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

246810

0.1

1

10

30

-55oC

150oC

*Notes:

1. V

DS

= 20V

2. 250

μs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0369121518

0.4

0.8

1.2

1.6

2.0

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.4 0.8 1.2 1.6 2.0 2.4

1

10

100

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0.1 1 10 30

0

300

600

900

1200

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

03691215

0

2

4

6

8

10

*Note: ID = 6.5A

VDS = 100V
V

DS

= 250V

V

DS

= 400V

V

GS

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDD8N50NZ N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDD8N50NZ Rev. A

3

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