Fairchild FDD8882, FDU8882 service manual

2

April 2008

FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET

FDD8882 / FDU8882 N-Channel PowerTrench

®

30V, 55A, 11.5mΩ

Features

! r ! r ! High performance trench technology for extremely low

! Low gate charge ! High power and current handling capability

 RoHS Complicant

Application

! DC/DC converters

DS(ON) DS(ON)

r

DS(ON)

= 11.5mΩ, V = 15mΩ, V

= 10V, ID = 35A

GS

= 4.5V, ID = 35A

GS

MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r

and fast switching speed.

DS(ON)

tm

G

D

S

D-PAK

TO-252

(TO-252)

FDD8882/FDU8882 Rev. C

G DS

1

I-PAK

(TO-251AA)

D

G

S

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FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 30 V Gate to Source Voltage ±20 V Drain Current Continuous (T

I

D

Continuous (T Continuous (T

= 25oC, VGS = 10V) (Note 1)

C

= 25oC, VGS = 4.5V) (Note 1) 50 A

C

= 25oC, VGS = 10V, with R

amb

= 52oC/W) 12.6 A

θJA

55 A

Pulsed Figure 4 A

E

AS

P

D

T

, T

J

STG

Single Pulse Avalanche Energy (Note 2) 41 mJ Power dissipation 55 W Derate above 25

o

C0.37W/

Operating and Storage Te mperature -55 to 175

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case TO-252, TO-251 2.73 Thermal Resistance Junction to Ambient TO-252, TO-251 100 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 52

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD8882 FDD8882 TO-252AA 13” 12mm 2500 units FDU8882 FDU8882 TO-251AA N/A (Tube) N/A 75 units F F

o

C/W

o

C/W

o

C/W

o

C

o

C

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Tes t Cond itions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V

V

= 24V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC - - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V

I

= 35A, VGS = 10V - 0.0094 0.0115

D

= 35A, VGS = 4.5V - 0.0130 0.0150

I

Drain to Source On Resistance

D

I

= 35A, VGS = 10V,

D

= 175oC

T

J

- 0.0150 0.0190

µA

Ω

FDD8882/FDU8882 Rev. C

2

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Dynamic Characteristics

C C C R Q Q Q Q Q Q

ISS OSS RSS G

g(TOT) g(5) g(TH) gs gs2 gd

Input Capacitance Output Capacitance - 240 - pF Reverse Transfer Capacitance - 140 - pF Gate Resistance VGS = 0.5V, f = 1MHz - 2.4 - Ω Total Gate Charge at 10V VGS = 0V to 10V Total Gate Charge at 5V VGS = 0V to 5V - 11.7 17.6 nC Threshold Gate Charge VGS = 0V to 1V - 1.2 1.8 nC Gate to Source Gate Charge - 3.7 - nC Gate Charge Threshold to Plateau - 2.5 - nC Gate to Drain “Miller” Charge - 4.6 - nC

= 15V, VGS = 0V,

V

DS

f = 1MHz

V

DD

= 35A

I

D

= 1.0mA

I

g

FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET

- 1260 - pF

-2233nC

= 15V

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 8 - ns Rise Time - 82 - ns Turn-Off Delay Time - 40 - ns Fall Time - 25 - n s Turn-Off Time - - 98 ns

(VGS = 10V)

Drain-Source Diode Characteristics

V

SD

t

rr

Q

RR

Notes: 1: Package current limitation is 35A. 2: Starting T 3

Source to Drain Diode Voltage Reverse Recovery Ti me ISD = 35A, dISD/dt = 100A/µs- -32ns

Reverse Recovered Charge ISD = 35A, dISD/dt = 100A/µs- -21nC

= 25°C, L = 0.1mH, IAS = 28A, VDD = 27V, VGS = 10V.

J

- - 135 ns

= 15V, ID = 35A

V

DD

= 10V, RGS = 13Ω

V

GS

I

= 35A - - 1.25 V

SD

I

= 15A - - 1.0 V

SD

FDD8882/FDU8882 Rev. C

3

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FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET

Typical Characteristics T

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

= 25°C unless otherwise noted

C

150

125

Figure 1. Normali ze d Po we r Dis sip ation vs Case

Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

60

CURRENT LIMITED BY PACKAGE

40

20

, DRAIN CURRENT (A)

D

I

VGS = 10V

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

Figure 2. Maximum Contin uous Drain Current vs

Case Temperature

P

DM

t

1

t

x R

2

+ T

θJC

C

0

1

10

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

1/t2

10

600

100

, PEAK CURRENT (A)

DM

I

30

VGS = 4.5V

-5

10

FDD8882/FDU8882 Rev. C

Figure 3. Normalized Maximum Transient Thermal Impedance

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

-4

10

-3

10

t, PULSE WIDTH (s)

-2

10

-1

10

TC = 25oC

FOR TEMPERATURES ABOVE 25 CURRENT AS FOLLOWS:

I = I

Figure 4. Peak Current Capability

4

o

C DERATE PEAK

175 - T

25

150

0

10

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C

1

10