Fairchild FDD8878, FDU8878, FDD8878, FDU8878 Schematics

0

April 2008

FDD8878 / FDU8878 N-Channel PowerTrench

FDD8878 / FDU8878
N-Channel PowerTrench® MOSFET

30V, 40A, 15mΩ
Features



r

= 15mΩ, V

DS(ON)



r

= 18.5mΩ, V

DS(ON)



High pe rformance trench tech nology for e xtremely low
r

DS(ON)



Low gat e ch arge



High power and current handling capability



RoHS Compliant

= 10V, ID = 35A

GS

= 4.5V, ID = 35A

GS

General Description

This N- Channe l MOSF ET has been desig ned sp ecif icall y to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
contro llers. It ha s be en optimize d for low gate cha r ge , low
r

and fast switching speed.

DS(ON)

Application

 DC / DC Converters

tm

®

MOSFET

G

D

S

D-PAK

(TO-252)

©2008 Fairchild Semiconductor Corporation

DD8878 / FDU8878 Rev.

F

A4

G DS

1

I-PAK

(TO-251AA)

D

G

S

www.fairchildsemi.com

FDD8878 / FDU8878 N-Channel PowerTrench

Absolute Maximum Rating s T

= 25°C unless otherwise noted

C

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Sou r c e Voltage 30 V
Gate to Source Voltage ±20 V
Drain Cur re nt
Continuous (T

I

D

Continuous (T
Continuous (T

= 25oC, VGS = 10V) ( Note 1)

C

= 25oC, VGS = 4.5V) (Note 1) 36 A

C

= 25oC, VGS = 10V, with R

amb

= 52oC/W) 11 A

θJA

40 A

Pulsed Figure 4 A

E

AS

P

D

T

, T

J

STG

Single Pulse Avalanche Energy (Note 2) 25 mJ
Power dissipation 40 W
Derate above 25

o

C0.27W/

Operating and Storage Temperature -55 to 175

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case TO-252, TO-251 3.75
Thermal Resistance Junction to Ambient TO-252, TO-251 100
Thermal Resistance Junction to Am bient TO-252, 1in2 copper pad ar ea 52

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD8878 FDD8878 TO-252AA 13” 12mm 2500 units
FDU88 78 FDU8878 TO- 251AA Tube N/A 75 unit s
F
F

o

C/W

o

C/W

o

C/W

o

C

o

C

®

MOSFET

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Condit ions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Voltage ID = 250µA, VGS = 0V 30 - - V

V

= 24V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V

I

= 35A, VGS = 10V - 0.011 0.015

D

= 35A, VGS = 4.5V - 0.014 0.0185

I

Drain to S ou r c e On Re si st ance

D

I

= 35A, VGS = 10V,

D

T

= 175oC

J

- 0.018 0.024

µA

Ω

©2008 Fairchild Semiconductor Corporation

DD8878 / FDU8878 Rev. A

F

4

2

www.

fairchildsemi.com

Dynamic Characteristics

C
C
C
R
Q
Q
Q
Q
Q
Q

ISS
OSS
RSS
G

g(TOT)
g(5)
g(TH)
gs
gs2
gd

Input Capacitance
Output Capacit ance - 195 - pF
Reverse Transfer Capacitance - 110 - pF
Gate Resistance VGS = 0.5V, f = 1MHz - 3.1 - Ω
Total Gate Charge at 10V VGS = 0V to 10V
Total Gate Charge at 5V VGS = 0V to 5V - 10 14 nC
Threshold Gate Charge VGS = 0V to 1V - 0.9 1.3 nC
Gate to Source Gate Charg e - 2.6 - nC
Gate Charge Threshold to Plateau - 1.7 - nC
Gate to Drain “Miller” Charge - 4.5 - nC

= 15V, VGS = 0V,

V

DS

f = 1MHz

V

DD

I

= 35A

D

= 1.0m A

I

g

FDD8878 / FDU8878 N-Channel PowerTrench

-880- pF

-1926nC

= 15V

Switching Characteristi cs

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Ti me
Turn-On Delay Time - 7 - ns
Rise Time - 79 - ns
Turn-Off Delay Time - 38 - ns
Fall Time - 27 - ns
Turn-Off Time - - 97 ns

(VGS = 10V)

Drain-Source Diode Character istics

V

SD

t

rr

Q

RR

Notes:
1: Package current limitation is 35A.
2: Starting TJ = 25°C, L = 65uH, IAS = 28A, VDD = 27V, VGS = 10V.
3

Source to Drain Diode Voltage
Reverse Recovery Time ISD = 35A, dISD/dt = 100A/µs- -23ns

Reverse Recovered Charge ISD = 35A, dISD/dt = 100A/µs- - 9nC

--129ns

= 15V, ID = 35A

V

DD

= 4.5V, RGS = 16Ω

V

GS

I

= 35A - - 1.2 5 V

SD

I

= 3.2A - - 1.0 V

SD

®

MOSFET

©2008 Fairchild Semiconductor Corporation

DD8878 / FDU8878 Rev. A

F

4

3

www.

fairchildsemi.com

FDD8878 / FDU8878 N-Channel PowerTrench

Typical Characteristics T

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

TC, CASE TEMPERATURE (oC)

= 25°C unless otherwise noted

C

150

125

Figure 1. Normalized Power Dissipation vs Case

Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

VGS = 4.5V

CURRENT LIMITED
BY PACKAGE

VGS = 10V

175

Figure 2. Maximum Continuous Drain Curr ent vs

Case Temperature

P

DM

t

1

t

x R

2

2

+ T

θJC

C

1

10

NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

0

®

MOSFET

Figure 3. Normalized Maximum Transient Thermal Impedance

500

100

, PEAK CURRENT (A)

DM

I

30

©2008 Fairchild Semiconductor Corporation
F

DD8878 / FDU8878 Rev. A

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

VGS = 4.5V

-5

10

VGS = 10V

4

-4

10

-3

10

-2

10

t, PULSE WIDTH (s)

Figure 4. Peak Current Capability

4

TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

I = I

-1

10

175 - T

25

150

0

10

www.

C

1

10

fairchildsemi.com