Fairchild FDD8876 service manual

N

April 2008

FDD8876 / FDU8876

N-Channel PowerTrench® MOSFET 30V, 73A, 8.2mΩ

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r

and fast switching speed.

DS(ON)

Applications

• DC/DC converters

D

G

S

D-PAK

TO-252

(TO-252)

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V V

I

E P T

D

DSS GS

AS

D

, T

J

STG

Drain to Source Voltage 30 V Gate to Source Voltage ±20 V Drain Current Continuous (T Continuous (T Continuous (T Pulsed Figure 4 A Single Pulse Avalanche Energy (Note 2) 95 mJ Power dissipation 70 W Derate above 25 Operating and Storage Te mperature -55 to 175

= 25oC, VGS = 10V) (Note 1)

C

= 25oC, VGS = 4.5V) (Note 1) 66 A

C

= 25oC, VGS = 10V, with R

amb

o

C0.47W/

G DS

= 25°C unless otherwise noted

C

Features

•r

• High performance trench technology for extremely low

• Low gate charge

• High power and current handling capability

• RoHS Compliant

= 52oC/W) 15 A

θJA

= 8.2mΩ, V

DS(ON)

= 10mΩ, V

DS(ON)

r

DS(ON)

I-PAK

(TO-251AA)

= 10V, ID = 35A

GS

= 4.5V, ID = 35A

GS

D

G

S

73 A

tm

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case TO-252, TO-251 2.14 Thermal Resistance Junction to Ambient TO-252, TO-251 100 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 52

o

C/W

o

C/W

o

C/W

FDD8876 / FDU8876 Rev. A3

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD8876 FDD8876 TO-252AA 13” 12mm 2500 units FDU8876 FDU8876 TO-251AA Tube N/A 75 units F F

FDD8876 / FDU8876

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Tes t Cond itions Min Typ Max Units

Off Characteristics

B

VDSS

I

DSS

I

GSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V

V

= 24V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC - - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V

I

= 35A, VGS = 10V - 0.0066 0.0082

D

= 35A, VGS = 4.5V - 0.008 0.010

I

Drain to Source On Resistance

D

I

= 35A, VGS = 10V,

D

= 175oC

T

J

- 0.011 0.013

Dynamic Characteristics

C

ISS

C

OSS

C

RSS

R

G

Q

g(TOT)

Q

g(5)

Q

g(TH)

Q

gs

Q

gs2

Q

gd

Input Capacitance Output Capacitance - 330 - pF Reverse Transfer Capacitance - 200 - pF

= 15V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance VGS = 0.5V, f = 1MHz - 2.2 - Ω Total Gate Charge at 10V VGS = 0V to 10V Total Gate Charge at 5V VGS = 0V to 5V - 18 26 nC

V

= 15V

Threshold Gate Charge VGS = 0V to 1V - 1.4 1.9 nC Gate to Source Gate Charge - 4.2 - n C Gate Charge Threshold to Plateau - 2.8 - nC

DD

= 35A

I

D

= 1.0mA

I

g

Gate to Drain “Miller” Charge - 8.0 - nC

- 1700 - pF

-3447nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 8 - ns Rise Time - 91 - ns Turn-Off Delay Time - 44 - ns Fall Time - 37 - n s Turn-Off Time - - 122 ns

(VGS = 10V)

= 15V, ID = 35A

V

DD

= 10V, RGS = 10Ω

V

GS

- - 149 ns

Drain-Source Diode Characteristics

I

= 35A - - 1.25 V

V

SD

t

rr

Q

RR

Notes: 1: Package current limitation is 35A. 2: Starting T 3

Source to Drain Diode Voltage Reverse Recovery Time ISD = 35A, dISD/dt = 100A/µs- -26ns

Reverse Recovered Charge ISD = 35A, dISD/dt = 100A/µs- -12nC

= 25°C, L = 0.24mH, IAS = 28A, VDD = 27V, VGS = 10V.

J

SD

I

= 15A - - 1.0 V

SD

FDD8876 / FDU8876

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULT IPL I ER

0

0 25 50 75 100 175

125

150

TC, CASE TEMPERATURE (oC)

Figure 1. Normali ze d Po we r Dis sip ation vs Case

Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

80

CURRENT LIMITED BY PACKAGE

60

VGS = 10V

40

, DRAIN CURRENT (A)

D

20

I

0

25 50 75 100 125 150

VGS = 4.5V

175

TC, CASE TEMPERATURE (oC)

Figure 2. Maximum Contin uous Drain Current vs

Case Temperature

P

DM

t

1

t

x R

θJC

+ T

2

C

1

10

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

1/t2

0

Figure 3. Normalized Maximum Transient Thermal Impedance

1000

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

VGS = 4.5V

100

, PEAK CURRENT (A)

DM

I

30

-5

10

-4

10

-3

10

-2

10

-1

10

t, PUL SE WIDTH (s)

TC = 25oC FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

FDD8876 / FDU8876

Typical Characteristics T

1000

100

10

OPERATION IN THIS

AREA MAY BE

, DRAIN CURRENT (A)

D

I

LIMITED BY r

1

SINGLE PULSE TJ = MAX RATED

= 25oC

T

C

0.1 110

DS(ON)

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

= 25°C unless otherwise noted

C

Figure 5. Forward Bias Safe Operating Area

100

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

V

= 15V

DD

80

60

TJ = 25oC

40

, DRAIN CURRENT (A)

D

I

20

TJ = 175oC

0

1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

10µs

100µs

1ms

10ms

DC

500

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0 t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

100

10

, AVALANCHE CURRENT (A)

AS

I

60

1

0.01 0.1 1

STARTING TJ = 150oC

tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

NOTE: Refer to Fairchild Applica ti on Note s AN75 14 and AN75 15

Figure 6. Unclamped Inductive Switching

Capability

100

VGS = 5V

80

VGS = 10V

60

40

, DRAIN CURRENT (A)

D

I

20

0

0 0.2 0.4 0.6 0.8 1.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 4V

VGS = 3V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

10

TC = 25oC

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

20

ID = 35A

15

, DRAIN TO SOURCE

10

ON RESISTANCE (mΩ)

DS(ON)

ID = 1A

r

5

246810

, GATE TO SOURCE VOLTAGE (V)

V

GS

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

Figure 9. Drain to Source On Resis tanc e vs Ga te

Voltage and Drain Current

1.6

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

1.4

1.2

1.0

ON RESISTANCE

0.8

NORMALIZED DRAIN TO SOURCE

0.6

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 35A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

Fairchild FDD8876 service manual

Specifications and Main Features

Frequently Asked Questions

User Manual