Fairchild FDD8796, FDU8796 service manual
FDD8796/FDU8796
N-Channel PowerTrench® MOSFET
25V, 35A, 5.7mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
and fast switching speed.
DS(on)
Features
Max r
Max r
Low gate charge: Q
Low gate resistance
= 5.7mΩ at V
DS(on)
= 8.0mΩ at V
DS(on)
= 10V, ID = 35A
GS
= 4.5V, ID = 35A
GS
= 37nC(Typ), VGS = 10V
g(10)
March 2006
E
E
R
F
D
A
E
L
FDD8796/FDU8796 N-Channel PowerTrench
I
M
P
L
E
M
E
N
T
A
T
I
O
N
Application
Vcore DC-DC for Desktop Computers and Servers
Avalanche rated and 100% tested
RoHS Compliant
VRM for Intermediate Bus Architecture
G
G
MOSFET Maximum Ratings T
D
DS
= 25°C unless otherwise noted
C
I-PAK
(TO-251AA)
Short Lead I-PAK
S
G
Symbol Parameter Ratings Units
V
DS
V
GS
Drain to Source Voltage 25 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package Limited) 35
I
D
-Pulsed (Note 1) 305
E
AS
P
D
, T
T
J
STG
Single Pulse Avalanche Energy (Note 2) 91 mJ
Power Dissipation 88 W
Operating and Storage Temperature -55 to 175 °C
Thermal Characteristics
D
®
MOSFET
S
A -Continuous (Die Limited) 98
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case TO_252, TO_251 1.7 °C/W
Thermal Resistance, Junction to Ambient TO_252, TO_251 100 °C/W
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD8796 FDD8796 TO-252AA 13’’ 12mm 2500 units
FDU8796 FDU8796 TO-251AA N/A (Tube) N/A 75 units
FDU8796 FDU8796_F071 TO-251AA N/A (Tube) N/A 75 units
©2006 Fairchild Semiconductor Corporation
FDD8796/FDU8796 Rev. B
www.fairchildsemi.com1
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
VDSS
∆B
VDSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250µA, referenced to
25
°C
VDS = 20V
V
= 0V TJ = 150°C
GS
7 mV/°C
1
250
Gate to Source Leakage Current VGS = ±20V ±100 nA
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 1.8 2.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
ID = 250µA, referenced to
25
°C
-6.7 mV/°C
VGS = 10V, ID = 35A 4.5 5.7
VGS = 4.5V, ID = 35A 6.0 8.0
V
= 10V, ID = 35A
DS
TJ = 175°C
6.9
9.5
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance 455 605 pF
Reverse Transfer Capacitance 315 475 pF
VDS = 13V, VGS = 0V,
f = 1MHz
1960 2610 pF
Gate Resistance f = 1MHz 1.1 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 24 39 ns
Turn-Off Delay Time 99 158 ns
VDD =13V, ID = 35A
VGS = 10V, RGS = 20Ω
10 20 ns
Fall Time 57 91 ns
Total Gate Charge VGS = 0 to10V
Total Gate Charge VGS = 0 to 5V 19 27 nC
Gate to Source Gate Charge 6 nC
Gate to Drain Charge 6 nC
VDD =13V,
ID = 35A,
Ig = 1.0mA
37 52 nC
Drain-Source Diode Characteristics
V
= 0V, IS = 35A 0.9 1.25 V
V
SD
t
rr
Q
rr
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting T
Source to Drain Diode Voltage
Reverse Recovery Time IF = 35A, di/dt = 100A/µs 30 45 ns
Reverse Recovery Charge IF = 35A, di/dt = 100A/µs 23 35 nC
= 25°C, L = 0.3mH, IAS = 24.7A, VDD = 23V, VGS = 10V.
J
GS
V
= 0V, IS = 15A 0.8 1.0 V
GS
FDD8796/FDU8796 N-Channel PowerTrench
µA
mΩ
®
MOSFET
FDD8796/FDU8796 Rev. B
2 www.fairchildsemi.com
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