Fairchild FDD8770, FDU8770 service manual
March 2006
FDD8770/FDU8770 N-Channel PowerTrench
FDD8770/FDU8770
N-Channel PowerTrench® MOSFET
25V, 35A, 4.0mΩ
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
and fast switching speed.
DS(on)
Application
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
G
DS
(TO-251AA)
Features
Max r
Max r
Low gate charge: Q
Low gate resistance
RoHS Compliant
I-PAK
= 4.0mΩ at V
DS(on)
= 5.5mΩ at V
DS(on)
G
D
S
Short Lead I-PAK
= 10V, ID = 35A
GS
= 4.5V, ID = 35A
GS
= 52nC(Typ), VGS = 10V
g(10)
G
E
E
R
F
I
D
A
E
L
M
P
L
E
M
E
N
T
A
T
I
O
N
D
®
MOSFET
S
MOSFET Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter Ratings Units
V
DS
V
GS
Drain to Source Voltage 25 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package Limited) 35
I
D
-Pulsed (Note 1) 407
E
AS
P
D
, T
T
J
STG
Single Pulse Avalanche Energy (Note 2) 113 mJ
Power Dissipation 115 W
Operating and Storage Temperature -55 to 175 °C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case TO-252,TO-251 1.3 °C/W
Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD8770 FDD8770 TO-252AA 13’’ 12mm 2500 units
FDU8770 FDU8770 TO-251AA N/A(Tube) N/A 75 units
FDU8770 FDU8770_F071 TO-251AA N/A(Tube) N/A 75 units
©2006 Fairchild Semiconductor Corporation
FDD8770/FDU8770 Rev. A
www.fairchildsemi.com1
A -Continuous (Die Limited) 210
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
VDSS
∆B
∆T
I
DSS
I
GSS
VDSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250µA, referenced to
25
°C
VDS = 20V,
V
GS
= 0V
TJ = 150°C 250
13.6 mV/°C
1
Gate to Source Leakage Current VGS = ±20V ±100 nA
FDD8770/FDU8770 N-Channel PowerTrench
µA
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 1.6 2.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 685 915 pF
Reverse Transfer Capacitance 450 675 pF
Gate Resistance f = 1MHz 1.5 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 12 22 ns
Turn-Off Delay Time 49 78 ns
Fall Time 25 40 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Gate Charge 8.1 nC
Gate to Drain “Miller”Charge 11 nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting T
Source to Drain Diode Forward Voltage
Reverse Recovery Time IF = 35A, di/dt = 100A/µs 32 48 ns
Reverse Recovery Charge IF = 35A, di/dt = 100A/µs 25 38 nC
= 25oC, L = 0.3mH, IAS = 27.5A ,VDD = 23V, VGS = 10V.
J
ID = 250µA, referenced to
25
°C
-5.9 mV/°C
VGS = 10V, ID = 35A 3.3 4.0
VGS = 4.5V, ID = 35A 4.0 5.5
VGS = 10V, ID = 35A
TJ = 175°C
VDS = 13V, VGS = 0V,
4.8 5.9
2795 3720 pF
f = 1MHz
10 20 ns
VDD = 13V, ID = 35A
VGS = 10V, RGS = 5Ω
= 0V to 10V
GS
= 0V to 5V 29 41 nC
GS
V
= 0V, IS = 35A 0.84 1.25
GS
V
= 0V, IS = 15A 0.79 1.0
GS
VDD = 13V
I
= 35A
D
Ig = 1.0mA
52 73 nC
mΩ
®
MOSFET
V
FDD8770/FDU8770 Rev. A
www.fairchildsemi.com2
Loading...