Fairchild FDD86326 service manual
FDD86326
N-Channel PowerTrench® MOSFET
80 V, 37 A, 23 m:
Features
Max r
Max r
High performance trench technology for extremely low r
High power and current handling capability in a widely used
surface mount package
Very low Qg and Qgd compared to competing trench
technologies
Fast switching speed
100% UIL tested
RoHS Compliant
= 23 m: at VGS = 10 V, ID = 8 A
DS(on)
= 37 m: at VGS = 6 V, ID = 4.6 A
DS(on)
DS(on)
June 2010
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for r
ruggedness.
, switching performance and
DS(on)
®
process that has
Applications
DC - DC Conversion
FDD86326 N-Channel PowerTrench
®
MOSFET
D
D
G
S
D-PAK
TO-252
(TO-252)
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 80 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC= 25 °C 42
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 40
Single Pulse Avalanche Energy (Note 3) 121 mJ
Power Dissipation TC = 25 °C 62
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
C
= 25 °C 37
C
= 25 °C (Note 1a) 8
A
= 25 °C (Note 1a) 3.1
A
G
S
Thermal Characteristics
A
W
R
TJC
R
TJA
Thermal Resistance, Junction to Case 2.0
Thermal Resistance, Junction to Ambient (Note 1a) 40
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD86326 FDD86326 D-PAK(TO-252) 13 ’’ 12 mm 2500 units
©2010 Fairchild Semiconductor Corporation
FDD86326 Rev.C1
°C/W
1
www.fairchildsemi.com
FDD86326 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
'BV
DSS
'T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
'V
GS(th)
'T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 80 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 64 V, V
I
= 250 PA, referenced to 25 °C 67 mV/°C
D
= 0 V 1 PA
GS
Gate to Source Leakage Current VGS = ±20 V, VDS= 0 V ±100 nA
(Note 2)
Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 2 3.1 4 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
= 250 PA, referenced to 25 °C -8.5 mV/°C
I
D
V
= 10 V, ID = 8 A 19 23
GS
= 6 V, ID = 4.6 A 26 37
GS
= 10 V, ID = 8 A, TJ= 125 °C 33 44
V
GS
Forward Transconductance VDS = 10 V, ID = 8 A 21 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 180 240 pF
Reverse Transfer Capacitance 15 25 pF
= 50 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.4 :
780 1035 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 3.0 10 ns
Turn-Off Delay Time 13.4 24 ns
= 50 V, ID = 8 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 :
7.6 15 ns
Fall Time 2.9 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 5 V 7.6 11 nC
Gate to Source Gate Charge 4.0 nC
V
DD
I
D
= 8 A
= 50 V,
13.4 19 nC
Gate to Drain “Miller” Charge 3.7 nC
m:V
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
TJA
R
TJC
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. Starting TJ=25°C, L = 3 mH, IAS = 9 A, VDD = 80 V, VGS = 10 V.
FDD86326 Rev.C1
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 43 68 nC
is guaranteed by design while R
is determined by the user’s board design.
TJA
V
= 0 V, IS= 8 A (Note 2) 0.8 1.3
GS
= 0 V, IS= 2.6 A (Note 2) 0.7 1.2
V
GS
= 8 A, di/dt = 100 A/Ps
I
F
a. 40 °C/W when mounted on a
1 in2pad of 2 oz copper.
V
43 68 ns
b. 96 °C/W when mounted on a
minimum pad of 2 oz copper.
2
www.fairchildsemi.com
Loading...