Fairchild FDD86252 service manual

FDD86252

G

S

D

TO-252

D-PAK

(TO-252)

N-Channel PowerTrench® MOSFET

150 V, 27 A, 52 m:
Features

 Max r

 Max r

 100% UIL tested

 RoHS Compliant

= 52 m: at VGS = 10 V, ID = 5 A

DS(on)

= 72 m: at VGS = 6 V, ID = 4 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

Application

September 2011

®

process that has

FDD86252 N-Channel PowerTrench

 DC - DC Conversion

D

G

S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 150 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC = 25 °C 42

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 25

Single Pulse Avalanche Energy (Note 3) 72 mJ

Power Dissipation TC = 25 °C 89

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

C

= 25 °C 27

C

= 25 °C (Note 1a) 5

A

= 25 °C (Note 1a) 3.1

A

Thermal Characteristics

®

MOSFET

A

W

R

TJC

R

TJA

Thermal Resistance, Junction to Case 1.4

Thermal Resistance, Junction to Ambient ( Note 1a) 40

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD86252 FDD86252 D-PAK(TO-252) 13 ’’ 12 mm 2500 units

©2011 Fairchild Semiconductor Corporation
FDD86252 Rev.C

1

www.fairchildsemi.com

FDD86252 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV
'T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 150 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current VDS = 120 V, V

Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 PA, referenced to 25 °C 104 mV/°C

D

= 0 V 1 PA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

'V
'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 2.0 3.1 4.0 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 PA, referenced to 25 °C -10 mV/°C

D

V

= 10 V, ID = 5 A 41 52

GS

= 6 V, ID = 4 A 49 72

GS

= 10 V, ID = 5 A,TJ = 125 °C 81 103

V

GS

Forward Transconductance VDS = 10 V, ID = 5 A 15 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 78 130 pF

Reverse Transfer Capacitance 4.2 10 pF

Gate Resistance 0.4 :

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

Q

g

g

gs

gd

Turn-On Delay Time

Rise Time 1.8 10 ns

Turn-Off Delay Time 14 25 ns

Fall Time 310ns

Total Gate Charge VGS = 0 V to 10 V

Total Gate Charge VGS = 0 V to 5 V 6.3 9 nC

Gate to Source Charge 3.4 nC

Gate to Drain “Miller” Charge 2.6 nC

= 75 V, VGS = 0 V,

V

DS

f = 1 MHz

= 75 V, ID = 5 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 :

V

DD

I

= 5 A

D

= 75 V,

741 985 pF

8.3 17 ns

11.3 16 nC

m:V

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:
1: R

TJA

R

TJC

2: Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3: Starting TJ = 25 °C, L = 1 mH, IAS = 12 A, VDD = 135 V, VGS = 10 V.

©2011 Fairchild Semiconductor Corporation
FDD86252 Rev.C

Source-Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 72 115 nC

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

is guaranteed by design while R

is determined by the user’s board design.

TJA

a)

V

GS

V

GS

= 5 A, di/dt = 100 A/Ps

I

F

40 °C/W when mounted o n a

2

1 in

pad of 2 oz copper

= 0 V, IS = 5 A (Note 2) 0.80 1.3 V

= 0 V, IS = 2.6 A (Note 2) 0.77 1.2

60 97 ns

96 °C/W when mounted on

b)

a minimum pad

2

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