Fairchild FDD86250 service manual

FDD86250

G

S

D

TO-252

D-PAK

(TO-252)

D

G

S

N-Channel PowerTrench® MOSFET

150 V, 50 A, 22 mΩ
Features

 Max r

 Max r

 100% UIL tested

 RoHS Compliant

= 22 mΩ at VGS = 10 V, ID = 8 A

DS(on)

= 31 mΩ at VGS = 6 V, ID = 6.5 A

DS(on)

FDD86250 N-Channel PowerTrench

December 2010

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

Application

 DC - DC Conversion

MOSFET Maximum Ratings

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

TJ, T

STG

Drain to Source Voltage 150 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC = 25 °C 50

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 40

Single Pulse Avalanche Energy (Note 3) 180 mJ

Power Dissipation TC = 25 °C 132

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

TC = 25 °C unless otherwise noted

= 25 °C 51

C

= 25 °C (Note 1a) 8

A

= 25 °C (Note 1a) 3.1

A

Thermal Characteristics

®

MOSFET

A

W

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD86250 FDD86250 D-PAK(TO-252) 13 ’’ 12 mm 2500 units

Thermal Resistance, Junction to Case 0.94

Thermal Resistance, Junction to Ambient (Note 1a) 40

°C/W

©2010 Fairchild Semiconductor Corporation
FDD86250 Rev.C

1

www.fairchildsemi.com

FDD86250 N-Channel PowerTrench

Electrical Characteristics

TJ = 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current VDS = 120 V, V

Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 106 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 2.9 4.0 V

Gate to Source Threshold Voltage
Temperature Coefficient

I

= 250 μA, referenced to 25 °C -10 mV/°C

D

VGS = 10 V, ID = 8 A 18.4 22

Static Drain to Source On Resistance

= 10 V, ID = 8 A, TJ = 125 °C 35.8 45

V

GS

Forward Transconductance VDS = 10 V, ID = 8 A 28 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 167 225 pF

Reverse Transfer Capacitance 7 15 pF

Gate Resistance 0.6 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

Q

g

g

gs

gd

Turn-On Delay Time

Rise Time 3.7 10 ns

Turn-Off Delay Time 20 32 ns

Fall Time 410ns

Total Gate Charge VGS = 0 V to 10 V

Total Gate Charge VGS = 0 V to 5 V 12.8 18 nC

Gate to Source Charge 6.7 nC

Gate to Drain “Miller” Charge 4.7 nC

VDS = 75 V, VGS = 0 V,
f = 1 MHz

= 75 V, ID = 8 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

VDD = 75 V,
ID = 8 A

1585 2110 pF

11.2 20 ns

23 33 nC

mΩVGS = 6 V, ID = 6.5 A 21.4 31

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:
1: R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

θJA

R

θJC

2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3: Starting TJ = 25 °C, L = 1.0 mH, IAS = 19 A, VDD = 135 V, VGS = 10 V.

©2010 Fairchild Semiconductor Corporation
FDD86250 Rev.C

Source-Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 104 166 nC

is guaranteed by design while R

is determined by the user’s board design.

θJA

a)

40 °C/W when mounted on a
1 in2 pa d of 2 oz cop per

V

= 0 V, IS = 8 A (Note 2) 0.78 1.3 V

GS

V

= 0 V, IS = 2.6 A (Note 2) 0.73 1.2

GS

IF = 8 A, di/dt = 100 A/μs

2

71 113 ns

b) 96 °C/W when mounted on

a minimum pad

www.fairchildsemi.com