FDD86102LZ
G
S
D
TO-252
D-PAK
(TO-252)
D
S
G
N-Channel PowerTrench® MOSFET
100 V, 35 A, 22.5 mΩ
FDD86102LZ N-Channel PowerTrench
October 2010
Features
Max r
Max r
HBM ESD protection level > 6 kV typical (Note 4)
Very low Qg and Qgd compared to competing trench
technologies
Fast switching speed
100% UIL tested
RoHS Compliant
= 22.5 mΩ at VGS = 10 V, ID = 8 A
DS(on)
= 31 mΩ at VGS = 4.5 V, ID = 7 A
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
®
process that has
Applications
DC - DC Conversion
Inverter
Synchronous Rectifier
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 42
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 40
Single Pulse Avalanche Energy (Note 3) 84 mJ
Power Dissipation TC = 25 °C 54
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
C
= 25 °C 35
C
= 25 °C (Note 1a) 8
A
= 25 °C (Note 1a) 3.1
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 2.3
Thermal Resistance, Junction to Ambient (Note 1a ) 40
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD86102LZ FDD86102LZ D-PAK(TO-252) 13 ’’ 12 mm 2500 units
©2010 Fairchild Semiconductor Corporation
FDD86102LZ Rev.C
1
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FDD86102LZ N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
ΔV
GS(th)
ΔT
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V
(Note 2)
I
= 250 μA, referenced to 25 °C 69 mV/°C
D
= 0 V 1 μA
GS
= 0 V ±10 μA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.5 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -6 mV/°C
D
V
= 10 V, ID = 8 A 17.8 22.5
GS
= 4.5 V, ID = 7 A 23.2 31
GS
V
= 10 V, ID = 8 A, TJ = 125 °C 31.1 40
GS
Forward Transconductance VDS = 5 V, ID = 8 A 31 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 181 245 pF
Reverse Transfer Capacitance 7.7 15 pF
Gate Resistance 0.6 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 2.3 10 ns
Turn-Off Delay Time 20 32 ns
Fall Time 2.3 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 8.7 13 nC
Gate to Source Gate Charge 2.7 nC
Gate to Drain “Miller” Charge 2.4 nC
= 50 V, VGS = 0 V,
V
DS
f = 1 MHz
= 50 V, ID = 8 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
V
DD
I
= 8 A
D
= 50 V,
1157 1540 pF
6.6 14 ns
18 26 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
= 0 V, IS = 8 A (Note 2) 0.82 1.3
V
SD
t
rr
Q
rr
Notes:
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
1. R
θJA
R
θJC
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 43 70 nC
is guaranteed by design while R
is determined by the user’s board design.
θJA
a. 40 °C/W when mounted on a
1 in2 pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 1 mH, IAS = 13 A, VDD = 90 V, VGS = 10 V.
4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2010 Fairchild Semiconductor Corporation
FDD86102LZ Rev.C
GS
= 0 V, IS = 2.6 A (Note 2) 0.75 1.2
V
GS
= 8 A, di/dt = 100 A/μs
I
F
2
43 70 ns
b. 96 °C/W when mounted on a
minimum pad of 2 oz copper.
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V
FDD86102LZ N-Channel PowerTrench
012345
0
10
20
30
40
VGS = 3.5 V
VGS = 3 V
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 2.5 V
VGS = 4.5 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 10203040
0
1
2
3
4
5
VGS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5 V
VGS = 3.5 V
VGS = 3 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = 8 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
0
30
60
90
120
TJ = 125 oC
ID = 8 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
012345
0
10
20
30
40
TJ = 25 oC
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
50
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On-Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
®
MOSFET
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
©2010 Fairchild Semiconductor Corporation
FDD86102LZ Rev.C
Figure 5. Transfer Characteristics
Figure 4.
O n - R es i s t a n c e vs G a t e t o
Source Voltage
Figure 6.
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
3
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FDD86102LZ N-Channel PowerTrench
0 5 10 15 20
0
2
4
6
8
10
ID = 8 A
VDD = 50 V
V
DD
= 25 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 75 V
0.1 1 10 100
1
10
100
1000
2000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.001 0.01 0.1 1 10 30
1
10
40
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
0 5 10 15 20 25 30 35
10
-9
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
V
GS
= 0 V
TJ = 125 oC
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
I
g
, GATE LEAKAGE CURRENT (A)
25 50 75 100 125 150
0
10
20
30
40
V
GS
= 4.5 V
R
θJC
= 2.3 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
0.1 1 10 100 300
0.05
0.1
1
10
100
100us
10 ms
DC
1 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJC
= 2.3
o
C/W
T
C
= 25
o
C
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
C a p a c i t a n c e v s D r a i n
to Source Voltage
®
MOSFET
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
©2010 Fairchild Semiconductor Corporation
FDD86102LZ Rev.C
Figure 11.
Current vs Case Temperature
M a x i m u m C o n t i n u o u s D r a i n
Figure 10.
G a t e L e a k a g e C u r r e n t v s G a t e t o
Source Voltage
Figure 12.
F o r w ar d B i a s S a fe
Operating Area
4
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FDD86102LZ N-Channel PowerTrench
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
100
1000
10000
P
(PK)
, PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θJC
= 2.3 oC/W
T
C
= 25 oC
t, PULSE WIDTH (sec)
10
-5
10
-4
10
-3
10
-2
10
-1
1
0.005
0.01
0.1
1
SINGLE PULSE
R
θJC
= 2.3 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJC
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJC
x R
θJc
+ T
C
Typical Characteristics T
Figure 13.
= 25 °C unless otherwise noted
J
Single Pulse Maximum Power Dissipation
®
MOSFET
©2010 Fairchild Semiconductor Corporation
FDD86102LZ Rev.C
Figure 14. Junction-to-Case Transient Thermal Response Curve
5
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TRADEMARKS
®
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
®
®
ESBC™
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
FastvCore™
FETBench™
FlashWriter
®
*
FPS™
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
®
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
®
SM
®
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
®
®*
The Power Franchise
TinyBoost™
TinyBuck™
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TINYOPTO™
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TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
μSerDes™
UHC
Ultra FRFET™
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VCX™
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®
®
®
®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDD86102LZ N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2010 Fairchild Semiconductor Corporation
FDD86102LZ Rev.C
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
6
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Rev. I48
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