Fairchild FDD850N10L service manual

FDD850N10L

D-PAK

G

S

D

D

G

S

N-Channel PowerTrench® MOSFET

100V, 15.7A, 75mΩ

FDD850N10L N-Channel PowerTrench

December 2010

Features

•R

•R

• Low Gate Charge ( Typ. 22.2nC)

•Low C

• Fast Switching

• 100% Avalanche Tested

• Improve dv/dt Capability

•RoHS Compliant

= 61mΩ ( Typ.) @ VGS = 10V, ID = 12A

DS(on)

= 64mΩ ( Typ.) @ VGS = 5V, ID = 12A

DS(on)

( Typ. 42pF)

rss

Description

This N-Channel MOSFET is produced using Fairchild Semicon­ductor’s advance PowerTrench process that has been especially
tailored to minimize the on-state resistance and yet maintain
superior switching performance.

Application

• DC to DC Converters / Synchronous Rectification

MOSFET Maximum Ratings T

Symbol Parameter Rating Units

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P

D

, T

T

J

STG

T

L

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V

Drain Current
Drain Current - Pulsed (Note 1) 63 A

Single Pulsed Avalanche Energy (Note 2) 41 mJ

Power Dissipation
Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

o

= 25

C unless otherwise noted*

C

- Continuous (T

- Continuous (T

(T

= 25oC) 50 W

C

- Derate above 25

= 25oC) 15.7

C

= 100oC) 11.1

C

o

C0.33W/

300

o

o

®

MOSFET

A

o

C

C
C

Thermal Characteristics

Symbol Parameter

R

θJC

R

θJA

©2010 Fairchild Semiconductor Corporation
FDD850N10L Rev. A5

Thermal Resistance, Junction to Case - 3.0
Thermal Resistance, Junction to Ambient - 87

Min. Max.

www.fairchildsemi.com1

Units

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD850N10L FDD850N10L D-PAK 380mm 16mm 2500

FDD850N10L N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
ΔBV

ΔT
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 100 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V

I

= 250μA, Referenced to 25oC-0.1-V/

D

V

= 80V, V

DS

= 80V, TC = 150oC - - 500

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA1.0-2.5V

V

= 10V, ID = 12A - 61 75 mΩ

Static Drain to Source On Resistance
Forward Transconductance

GS

= 5V, ID = 12A - 64 96 mΩ

V

GS

= 10V, ID = 15.7A (Note 4)

V

DS

-31-S

Dynamic Characteristics

C
C
C
Q
Q
Q
Q

iss
oss
rss

g(tot)
g(tot)
gs
gd

Input Capacitance
Output Capacitance - 80 105 pF
Reverse Transfer Capacitance - 42 - pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 10V
Total Gate Charge at 5V VGS = 5V - 12.3 16.0 nC
Gate to Source Gate Charge
Gate to Drain “Miller” Charge - 5.7 - nC

= 80V

V

DS

I

= 15.7A

D

- 1100 1465 pF

- 22.2 28.9 nC

-3.0-nC

μA

o

C

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 21 52 ns
Turn-Off Delay Time - 27 64 ns
Turn-Off Fall Time - 8 26 ns

-1744ns

= 50V, ID = 15.7A

V

DD

V

= 5V, R

GS

(Note 4, 5)

GEN

= 4.7Ω

ESR Equivalent Series Resistance (G-S) - 1.75 - Ω

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1mH, I

3. I

≤ 15.7A, di/dt ≤ 200A/μs, VDD ≤ BV

SD

4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 15.7 A
Maximum Pulsed Drain to Source Diode Forward Current - - 63 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 50 - nC

= 9.1A, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, VDS = 80V, I

GS

dI

/dt = 100A/μs (Note 4)

F

= 12A - - 1.3 V

SD

= 15.7A

SD

-38-ns

FDD850N10L Rev. A5

2

www.fairchildsemi.com

Typical Performance Characteristics

0.1 1 10

1

10

100

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

V

GS

= 15.0V

10.0V

6.0V

5.0V

3.5V

3.0V

0246

0.1

1

10

100

-55oC

175oC

*Notes:

1. V

DS

= 10V

2. 250

μs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Volt a g e [V]

0.2 0.4 0.6 0.8 1.0 1.2 1.4

1

10

100

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

175oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0 1020304050

0.00

0.04

0.08

0.12

0.16

0.20

*Note: TC = 25oC

VGS = 10V

VGS = 5V

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.1 1 10 100

10

100

1000

5000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MH z

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

0 4 8 12162024

0

2

4

6

8

10

*Note: ID = 15.7A

VDS = 20V
V

DS

= 50V

V

DS

= 80V

V

GS

, Gate-Source Voltage [V]

Qg, Total Ga te Charge [nC ]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDD850N10L N-Channel PowerTrench

®

MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDD850N10L Rev. A5

3

www.fairchildsemi.com