Fairchild FDD8453LZ service manual

tm

FDD8453LZ

(

)

N-Channel PowerTrench® MOSFET

40V, 50A, 6.7mΩ

Features

 Max r
 Max r
 HBM ESD protection level >7kV typical (Note 4)
 RoHS Compliant

= 6.7mΩ at VGS = 10V, ID = 15A

DS(on)

= 8.7mΩ at VGS = 4.5V, ID = 13A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.

Applications

 Inverter
 Synchronous Rectifier

FDD8453LZ N-Channel PowerTrench

September 2007

®

process that has

®

MOSFET

D

D

G

S

D-PAK

TO-252

G

TO-252

S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 50

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 100
Single Pulse Avalanche Energy (Note 3) 253 mJ
Power Dissipation TC = 25°C 65
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

C

= 25°C 75

C

= 25°C (Note 1a) 16.4

A

= 25°C (Note 1a) 3.1

A

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.9
Thermal Resistance, Junction to Ambient (Note 1a) 40

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD8453LZ FDD8453LZ D-PAK (TO-252) 13’’ 12mm 2500 units

©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev.C

°C/W

1

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FDD8453LZ N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 32V, V
Gate to Source Leakage Current VGS = ±20V, V

ID = 250µA, referenced to 25°C 36 mV/°C

= 0V 1 µA

GS

= 0V ±10 µA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 1.8 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDS = 5V, ID = 15A 77 S

ID = 250µA, referenced to 25°C -6.0 mV/°C
VGS = 10V, ID = 15A 5.8 6.7

VGS = 4.5V, ID = 13A 6.8 8.7
VGS = 10V, ID = 15A,

TJ = 125°C

9.1 10.6

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 320 425 pF
Reverse Transfer Capacitance 190 285 pF

VDS = 20V, VGS = 0V,
f = 1MHz

2640 3515 pF

Gate Resistance f = 1MHz 2.3 Ω

mΩ

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 6 12 ns
Turn-Off Delay Time 37 58 ns

VDD = 20V, ID = 15A,
VGS = 10V, R

GEN

= 6Ω

11 19 ns

Fall Time 5 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 7 nC

= 0V to 10V

GS

= 0V to 5V 24 33 nC

GS

VDD = 20V,
ID = 15A

46 64 nC

Gate to Drain “Miller” Charge 8 nC

Drain-Source Diode Characteristics

V

= 0V, IS = 2.0A (Note 2) 0.7 1.2

V

SD

t

rr

Q

rr

Notes:
1: R

R

θJA
θJC

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 20 32 nC

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

is guaranteed by design while R

is determined by the user’s board design.

θJA

a)

40°C/W when mounted on a

2

1 in

pad of 2 oz copper

GS

V

= 0V, IS = 15A (Note 2) 0.8 1.3

GS

IF = 15A, di/dt = 100A/µs

b)

25 40 ns

96°C/W when mounted
on a minimum pad.

V

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting T
4: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev.C

= 25°C, L = 3mH, IAS = 13A, VDD = 40V, VGS = 10V.

J

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FDD8453LZ N-Channel PowerTrench

Typical Characteristics T

100

VGS = 10V
VGS = 4.5V

80

60

40

, DRAIN CURRENT (A)

D

I

20

0

0.0 0.4 0.8 1.2 1.6 2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

On-Region Characteristics Figure 2.

1.8

ID = 15A
V

GS

= 10V

1.6

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (

J

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

VGS = 4V

= 25°C unless otherwise noted

J

VGS = 3.5V

VGS = 3V

o

C)

4.0

3.5

3.0

VGS = 3V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

VGS = 3.5V

2.5

2.0

NORMALIZED

1.5

VGS = 4V

1.0

V

DRAIN TO SOURCE ON-RESISTANCE

0.5
020406080100

I

, DRAIN CURRENT (A)

D

VGS = 4.5V

GS

= 10V

Norma l i z e d O n - R esistance

vs Drain Current and Gate Voltage

21

18

ID = 15A

(mΩ)

15

12

, DRAIN TO

9

DS(on)

r

6

SOURCE ON-RESISTANCE

3

246810

VGS, GATE TO SOURCE VOLTA G E (V)

Figure 4.

On-Resis tance vs Gate to

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

TJ = 125oC

o

T

= 25

C

J

Source Voltage

®

MOSFET

100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

80

V

= 5V

DS

60

40

, DRAIN CURRENT (A)

20

D

I

0

12345

TJ = 150oC

TJ = 25oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev.C

TJ = -55oC

100

V

= 0V

GS

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

1E-3

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drain Diode

TJ = 25oC

TJ = -55oC

Forward Voltage vs Source Current

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