Fairchild FDD8445 service manual

tm

FDD8445

D

G

S

N-Channel PowerTrench® MOSFET

40V, 50A, 8.7mΩ

FDD8445 N-Channel PowerTrench

March 2007

Features

 R

 Q

 Low Miller Charge

 Low Qrr Body Diode

 UIS Capability (Single Pulse/ Repetitive Pulse)

 Qualified to AEC Q101

 RoHS Compliant

= 6.7 mΩ (Typ), VGS = 10V, ID=50A

DS(ON)

= 45nC (Typ), VGS=10V

g(10)

E

E

R

F

I

D

A

E

L

M

P

L

E

M

E

N

T

A

T

I

O

N

Applications

 Automotive Engine Control

 Powertrain Management

 Solenoid and Motor Drivers

 Electronic Transmission

 Distributed Power Architecture and VRMs

 Primary Switch for 12V Systems

®

MOSFET

©2007 Fairchild Semiconductor Corporation
FDD8445 Rev A (W)

www.fairchildsemi.com1

Absolute Maximum Ratings T

= 25°C unless otherwise noted

c

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

Drain Current Continuous (VGS=10v) (Note 1) 70 A

I

D

Continuous (V

=10v,with R

GS

= 52oC/W) 15.2 A

θJA

Pulsed Figure 4

E

AS

P

D

, T

T

J

STG

S i n g l e P u l s e A v a l a n c h e E n e r g y ( N o t e 2 ) 1 4 4 mJ

Power Dissipation 79 W

o

Derate above 25

C0.53W/oC

Operating and Storage Temperature -55 to +175

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.9

Thermal Resistance, Junction to Ambient TO-252, lin2 copper pad area 52

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD8445 FDD8445 TO-252AA 13” 12mm 2500 units

o

C/W

o

C/W

FDD8445 N-Channel PowerTrench

o

C

®

MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

I

DSS

I

GSS

DSS

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 40 - - V

Zero Gate Voltage Drain Current

VDS = 32V
V

= 0V

GS

TJ=150°C - - 250

- - 1 μA

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(th)

R

DS(ON)

Gate to Source Threshold Voltage VDS = VGS, ID = 250μA 2 2.8 4 V

ID = 50A, VGS = 10V - 6.7 8.7

Drain to Source On Resistance

ID = 50A, VGS = 10V,
TJ = 175°C

- 12.5 16.3

Dynamic Characteristics

C

ISS

C

OSS

C

RSS

R

G

Q

g(TOT)

Q

g(5)

Q

g(TH)

Q

gs

Q

gs2

Q

gd

Input Capacitance

Output Capacitance - 295 390 pF

Reverse Transfer Capacitance - 178 270 pF

VDS = 25V, VGS = 0V,
f = 1MHz

- 3040 4050 pF

Gate Resistance f = 1MHz - 1.7 - Ω

Total Gate Charge at 10V VGS = 0 to 10V

- 45 59 nC

Total Gate Charge at 5V VGS = 0 to 5V - 17 22 nC

Threshold Gate Charge VGS = 0 to 2V - 5.8 7.6 nC

Gate to Source Gate Charge

Gate Charge Threshold to Plateau - 9.5 - nC

VDD = 20V,

ID = 5 0 A

- 12.5 - nC

Gate to Drain “Miller” Charge - 10.5 - nC

mΩ

FDD8445 Rev A (W) www.fairchildsemi.com2

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Switching Characteristics

t

(on)

t

d(on)

t

r

t

d(off)

t

f

t

off

Turn-On Time

Turn-On Delay Time - 10 - ns

Turn-On Rise Time - 82 - ns

Turn-Off Delay Time - 26 - ns

V

= 20V, ID = 50A

DD

V

= 10V, RGS = 2Ω

GS

Turn-Off Fall Time - 9.6 - ns

Turn-Off Time - - 53 ns

- - 138 ns

Drain-Source Diode Characteristics

I

=50A - - 1.25 V

V

SD

t

rr

Q

rr

Notes:
1: Maximum package current capability is 50A.
2: Starting T

Source to Drain Diode Voltage

Reverse Recovery Time IF= 50A, dIF/dt=100A/μs--39ns

Reverse Recovery Charge IF= 50A, dIF/dt=100A/μs--38nC

= 25oC, L=0.18mH, IAS=40A.

J

SD

=25A - - 1.0 V

I

SD

FDD8445 N-Channel PowerTrench

®

MOSFET

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

FDD8445 Rev A (W) www.fairchildsemi.com3

a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

certification.