Fairchild FDD8444 service manual

tm

FDD8444

N-Channel PowerTrench® MOSFET

40V, 50A, 5.2mΩ

Features

 Typ r

 Typ Q

 Low Miller Charge

 Low Qrr Body Diode

 UIS Capability (Single Pulse/ Repetitive Pulse)

 Qualified to AEC Q101

 RoHS Compliant

E

L

= 4mΩ at V

DS(on)

= 89nC at VGS = 10V

g(10)

E

E

R

F

I

D

A

M

P

L

E

M

E

N

T

A

T

I

O

N

= 10V, ID = 50A

GS

June 2007

Applications

 Automotive Engine Control

 Powertrain Management

 Solenoid and Motor Drivers

 Electronic Transmission

 Distributed Power Architecture and VRMs

 Primary Switch for 12V Systems

FDD8444 N-Channel PowerTrench

®

MOSFET

©2006 Fairchild Semiconductor Corporation
FDD8444 Rev B (W)

www.fairchildsemi.com1

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

Drain Current Continuous (V

= 10V, with R

GS

= 10V) (Note 1) 145

GS

= 52oC/W) 20

θJA

Pulsed Figure 4

E

AS

P

D

T

J

Single Pulse Avalanche Energy (Note 2) 535 mJ

Power Dissipation 153 W

o

Derate above 25

, T

Operating and Storage Temperature -55 to +175

STG

C1.02W/

Thermal Characteristics

FDD8444 N-Channel PowerTrench

AContinuous (V

o

C

o

C

R

θJC

R

θJA

Thermal Resistance, Junction to Case 0.98

Thermal Resistance, Junction to Ambient TO-252, 1in2 copper pad area 52

o

o

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD8444 FDD8444 TO-252AA 13” 12mm 2500 units

Electrical Characteristics T

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

VDSS

I

DSS

I

GSS

On Characteristics

V

GS(th)

r

DS(on)

Dynamic Characteristics

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 40 - - V

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

Gate to Source Threshold Voltage VGS = VDS, ID = 250μA22.54V

Drain to Source On Resistance

= 25°C unless otherwise noted

J

V

= 32V - - 1

DS

= 0V TJ = 150oC - - 250

V

GS

= 50A, VGS= 10V - 4 5.2

I

D

I

= 50A, VGS= 10V,

D

T

= 175oC

J

-7.29.4

C/W

C/W

μA

mΩ

®

MOSFET

C

iss

C

oss

C

rss

R

G

Q

g(TOT)

Q

g(5)

Q

g(TH)

Q

gs

Q

gs2

Q

gd

Input Capacitance

Output Capacitance - 585 - pF

Reverse Transfer Capacitance - 332 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance f = 1MHz - 1.9 - Ω

Total Gate Charge at 10V VGS = 0 to 10V

Total Gate Charge at 5V VGS = 0 to 5V 43 56 nC

Threshold Gate Charge VGS = 0 to 2V - 11 14.3 nC

Gate to Source Gate Charge

Gate Charge Threshold to Plateau - 11 - nC

Gate to Drain “Miller“ Charge - 20 - nC

FDD8444 Rev B (W) www.fairchildsemi.com2

V

DD

I

= 50A

D

I

= 1.0mA

g

- 6195 - pF

-89116nC

= 20V

-23-nC

FDD8444 N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Switching Characteristics

t

on

t

d(on)

t

r

t

d(off)

t

f

t

off

Turn-On Time

Turn-On Delay Ti me - 12 - ns

Turn-On Rise Time - 78 - n s

Turn-Off Delay Time - 48 - n s

Turn-Off Fall Time - 15 - n s

Turn-Off Time - - 9 5 ns

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: Package current limitation is 50A.
2: Starting TJ = 25oC, L = 0.67mH, IAS = 40A

Source to Drain Diode Voltage

Reverse Recovery Time

Reverse Recovery Charge - 45 59 nC

= 20V, ID = 50A

V

DD

V

= 10V, RGS = 2Ω

GS

I

= 50A - 0.9 1.25

SD

= 25A - 0.8 1.0

I

SD

= 50A, dIF/dt = 100A/μs

I

F

- - 135 ns

-3951ns

V

®

MOSFET

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

FDD8444 Rev B (W) www.fairchildsemi.com3

a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

certification.