Fairchild FDD8424H-F085A service manual

FDD8424H_F085A

Dual N & P-Channel PowerTrench® MOSFET

N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ

FDD8424H_F085A Dual N & P-Channel PowerTrench

October 2011

tm

Features

Q1: N-Channel

 Max r

Q2: P-Channel

 Max r

 Fast switching speed



Qualified to AEC Q101

 RoHS Compliant

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

P

D

E

AS

, T

T

J

= 24mΩ at VGS = 10V, ID = 9.0A

DS(on)

= 30mΩ at VGS = 4.5V, ID = 7.0A

DS(on)

= 54mΩ at VGS = -10V, ID = -6.5A

DS(on)

= 70mΩ at VGS = -4.5V, ID = -5.6A

DS(on)

D1/D2

Dual DPAK 4L

Drain to Source Voltage 40 -40 V

Gate to Source Voltage ±20 ±20 V

Drain Current - Continuous (Package Limited) 20 -20

- Continuous (Silicon Limited) T

- Continuous T

- Pulsed 55 -40

Power Dissipation for Single Operation TC = 25°C (Note 1) 30 35

T

Single Pulse Avalanche Energy (Note 3) 29 33 mJ

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

S1

G2

S2

G1

= 25°C unless otherwise noted

C

General Description

These dual N and P-Channel enhancement mode Power

MOSFETs are produced using Fairchild Semiconductor’s

advanced PowerTrench- process that has been especially

tailored to minimize on-state resistance and yet maintain

superior switching performance.

Application

 Inverter

 H-Bridge

G1

= 25°C 26 -20

C

= 25°C 9.0 -6.5

A

= 25°C (Note 1a) 3.1

A

= 25°C (Note 1b) 1.3

A

D1 D2

G2

S1

N-Channel P-Channel

S2

Thermal Characteristics

®

MOSFET

A

W T

R

θJC

R

θJC

Thermal Resistance, Junction to Case, Single Operation for Q1 (Note 1) 4.1

Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) 3.5

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD8424H FDD8424H_F085A TO-252-4L 13” 12mm 2500 units

°C/W

1

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FDD8424H_F085A Dual N & P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Typ e Min Typ Max Units

Off Characteristics

BV

∆BV ∆T

I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20V, V

On Characteristics

V

GS(th)

∆V ∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance

= 250µA, VGS = 0V

I

D

= -250µA, VGS = 0V

I

D

ID = 250µA, referenced to 25°C I

= -250µA, referenced to 25°CQ1Q2

D

V

= 32V, V

DS

= -32V, V

V

DS

GS

DS

= 0V = 0V

= 0V

V

= VDS, ID = 250µA

GS

= VDS, ID = -250µA

V

GS

ID = 250µA, referenced to 25°C

= -250µA, referenced to 25°C

I

D

V

= 10V, ID = 9.0A

GS

V

= 4.5V, ID = 7.0A

GS

= 10V, ID = 9.0A, TJ = 125°C

V

GS

= -10V, ID = -6.5A

V

GS

= -4.5V, ID = -5.6A

V

GS

= -10V, ID = -6.5A, TJ = 125°C

V

GS

= 5V, ID = 9.0A

V

DS

V

= -5V, ID = -6.5A

DS

Q1Q240

-40

Q1 Q2

Q1Q21

Q1 Q2

Q1

Q2

Q1 Q2

-1

V

34

-32

mV/°C

1

-1

±100 ±100nAnA

1.7

-1.6

-5.3

4.8

19 23 29

42 58 62

3

-3

mV/°C

24 30 37

54 70 80

29 13

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance f = 1MHz

Q1

= 20V, VGS = 0V, f = 1MHZ

V

DS

Q2

= -20V, VGS = 0V, f = 1MHZ

V

DS

Q1 Q2

750

115 140

75 75

1000 1330

155 185

115 115

1000

1.1

3.3

µA

V

mΩ

S

pF

Ω

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

Q1 V

= 20V, ID = 9.0A,

DD

V

GS

= 10V, R

GEN

= 6Ω

Q2

= -20V, ID = -6.5A,

V

DD

V

GS

= -10V, R

GEN

= 6Ω

Q1

= 10V, VDD = 20V, ID = 9.0A

V

GS

Q2 V

= -10V, VDD = -20V, ID = -6.5A

GS

2

Q1 Q2

7

13

17 20

14 17

2.3

3.0

3.2

3.6

14

7

14

24

3

10

31 36

6

12

3

10

20 24

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ns

nC

FDD8424H_F085A Dual N & P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

= 0V, IS = 9.0A (Note 2)

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

by the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Q1

Q2

a. 40°C/W when mounted on a 1 in

Scale 1 : 1 on letter size paper

a. 40°C/W when mounted on a 1 in

2

GS

= 0V, IS = -6.5A (Note 2)Q1Q2

V

GS

Q1

= 9.0A, di/dt = 100A/s

I

F

Q2

= -6.5A, di/dt = 100A/s

I

F

pad of 2 oz copper

0.87

0.88

Q1 Q2

is guaranteed by design while R

θJC

b. 96°C/W when mounted on a minimum pad of 2 oz copper

25 29

19 29

1.2

-1.2

38 44

29 44

is determined

θCA

V

ns

nC

®

MOSFET

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

3. Starting TJ = 25°C, N-ch: L = 0.3mH, IAS = 14A, VDD = 40V, VGS = 10V; P-ch: L = 0.3mH, IAS = -15A, VDD = -40V, VGS = -10V.

3

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FDD8424H_F085A Dual N & P-Channel PowerTrench

Typical Characteristics (Q1 N-Channel)T

60

50

VGS = 10V

40

30

VGS = 4.5V

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

20

, DRAIN CURRENT (A)

D

I

10

0

01234

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

On- Region Characteristics Figure 2.

1.8

ID = 9A

= 10V

V

GS

1.6

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (oC)

J

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

VGS = 4.0V

VGS = 3.5V

VGS = 3.0V

= 25°C unless otherwise noted

J

3.0

VGS = 3.0V

2.5

V

GS

= 3.5V

NORMALIZED

2.0

1.5

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 0 102030405060

ID, DRAIN CURRENT(A)

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

50

(mΩ)

40

30

, DRAIN TO

DS(on)

r

20

SOURCE ON-RESISTANCE

10

246810

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

ID = 9A

PULSE DURATI ON = 80µs DUTY CYCLE = 0.5%MAX

V

= 4.0V

GS

V

= 4.5V

GS

V

GS

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

TJ = 125oC

o

T

C

= 25

J

= 10V

®

MOSFET

60

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

50

V

= 5V

DS

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

1.5 2.0 2.5 3.0 3.5 4.0 4.5

TJ = 150oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

TJ = -55oC

TJ = 25oC

60

V

= 0V

GS

10

TJ = 150oC

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.0 0.3 0.6 0.9 1.2 1.5

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = 25oC

TJ = -55oC

Forward Voltage vs Source Current

4

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Fairchild FDD8424H-F085A service manual

Specifications and Main Features

Frequently Asked Questions

User Manual