Fairchild FDD8424H service manual

tm

FDD8424H

Dual N & P-Channel PowerTrench® MOSFET

N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ

FDD8424H Dual N & P-Channel PowerTrench

March 2007

Features

Q1: N-Channel

 Max r
 Max r

Q2: P-Channel

 Max r
 Max r
 Fast switching speed

 RoHS Compliant

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

P

D

E

AS

, T

T

J

= 24mΩ at VGS = 10V, ID = 9.0A

DS(on)

= 30mΩ at VGS = 4.5V, ID = 7.0A

DS(on)

= 54mΩ at VGS = -10V, ID = -6.5A

DS(on)

= 70mΩ at VGS = -4.5V, ID = -5.6A

DS(on)

D1/D2

Dual DPAK 4L

Drain to Source Voltage 40 -40 V
Gate to Source Voltage ±20 ±20 V
Drain Current - Continuous (Package Limited) 20 -20

- Continuous (Silicon Limited) T

- Continuous T

- Pulsed 55 -40
Power Dissipation for Single Operation TC = 25°C (Note 1) 30 35

T
Single Pulse Avalanche Energy (Note 3) 29 33 mJ

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

S1

G2

S2

G1

= 25°C unless otherwise noted

C

General Description

These dual N and P-Channel enhancement mode Power
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench- process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.

Application

 Inverter
 H-Bridge

G1

N-Channel P-Channel

= 25°C 26 -20

C

= 25°C 9.0 -6.5

A

= 25°C (Note 1a) 3.1

A

= 25°C (Note 1b) 1.3

A

D1 D2

G2

S1

S2

Thermal Characteristics

®

MOSFET

A

W T

R

θJC

R

θJC

Thermal Resistance, Junction to Case, Single Operation for Q1 (Note 1) 4.1
Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) 3.5

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD8424H FDD8424H TO-252-4L 13” 12mm 2500 units

©2007 Fairchild Semiconductor Corporation
FDD8424H Rev.C

°C/W

1

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FDD8424H Dual N & P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

∆BV
∆T

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20V, V

On Characteristics

V

GS(th)

∆V
∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance

ID = 250µA, VGS = 0V
ID = -250µA, VGS = 0V

ID = 250µA, referenced to 25°C
ID = -250µA, referenced to 25°CQ1Q2

VDS = 32V, V
VDS = -32V, V

GS
GS

DS

= 0V
= 0V

= 0V

VGS = VDS, ID = 250µA
VGS = VDS, ID = -250µA

ID = 250µA, referenced to 25°C
ID = -250µA, referenced to 25°C

VGS = 10V, ID = 9.0A
VGS = 4.5V, ID = 7.0A
VGS = 10V, ID = 9.0A, TJ = 125°C

VGS = -10V, ID = -6.5A
VGS = -4.5V, ID = -5.6A
VGS = -10V, ID = -6.5A, TJ = 125°C

VDS = 5V, ID = 9.0A
VDS = -5V, ID = -6.5A

Q1Q240

-40

Q1
Q2

Q1
Q2

Q1Q21

Q1
Q2

Q1

Q2

Q1
Q2

-1

V

34

-32

mV/°C

1

-1

±100
±100nAnA

1.7

-1.6

-5.3

4.8
19

23
29

42
58
62

3

-3
mV/°C

24
30
37

54
70
80

29
13

µA

V

mΩ

S

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance f = 1MHz

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

Q1
V

= 20V, VGS = 0V, f = 1MHZ

DS

Q2
V

= -20V, VGS = 0V, f = 1MHZ

DS

Q1
VDD = 20V, ID = 9.0A,
VGS = 10V, R

GEN

= 6Ω

Q2
VDD = -20V, ID = -6.5A,
VGS = -10V, R

GEN

= 6Ω

Q1
VGS = 10V, VDD = 20V, ID = 9.0A

Q2
VGS = -10V, VDD = -20V, ID = -6.5A

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

750

115
140

75
75

1.1

3.3

7
7

13

3

17
20

6
3

14
17

2.3

3.0

3.2

3.6

1000
1330

155
185

115
115

14
14

24
10

31
36

12
10

20
24

pF

pF

pF

Ω

ns

ns

ns

ns

nC

nC

nC

1000

©2007 Fairchild Semiconductor Corporation
FDD8424H Rev.C

2

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FDD8424H Dual N & P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

V

= 0V, IS = 9.0A (Note 2)

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

by the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Q1

Q2

a. 40°C/W when mounted on
a 1 in

Scale 1 : 1 on letter size paper

a. 40°C/W when mounted on
a 1 in

2

2

GS

V

= 0V, IS = -6.5A (Note 2)Q1Q2

GS

Q1
I

= 9.0A, di/dt = 100A/s

F

Q2
I

= -6.5A, di/dt = 100A/s

F

pad of 2 oz copper

pad of 2 oz copper

0.87

0.88

Q1
Q2

Q1
Q2

is guaranteed by design while R

θJC

b. 96°C/W when mounted on a
minimum pad of 2 oz copper

b. 96°C/W when mounted on a
minimum pad of 2 oz copper

25
29

19
29

1.2

-1.2
38

44
29

44

is determined

θCA

V

ns

nC

®

MOSFET

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

3. Starting TJ = 25°C, N-ch: L = 0.3mH, IAS = 14A, VDD = 40V, VGS = 10V; P-ch: L = 0.3mH, IAS = -15A, VDD = -40V, VGS = -10V.

©2007 Fairchild Semiconductor Corporation
FDD8424H Rev.C

3

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FDD8424H Dual N & P-Channel PowerTrench

Typical Characteristics (Q1 N-Channel)T

60

50

VGS = 10V

40

30

VGS = 4.5V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

20

, DRAIN CURRENT (A)

D

I

10

0

01234

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

On- Region Characteristics Figure 2.

1.8

ID = 9A
V

= 10V

GS

1.6

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

Fig ure 3. N ormalize d On -Re sis tan ce

vs Junction Temperature

VGS = 4.0V

VGS = 3.5V

VGS = 3.0V

= 25°C unless otherwise noted

J

3.0

VGS = 3.0V

2.5

V

GS

= 3.5V

NORMALIZED

2.0

1.5

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5
0 102030405060

ID, DRAIN CURRENT(A)

Nor mal i zed On- R esi sta n ce

vs Drain Current and Gate Voltage

50

(mΩ)

40

30

, DRAIN TO

DS(on)

r

20

SOURCE ON-RESISTANCE

10

246810

VGS, GATE TO SO URCE VOLT AGE ( V)

Figure 4.

On-Re sistance vs Gate to

Source Voltage

ID = 9A

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

V

= 4.0V

GS

V

= 4.5V

GS

V

GS

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

TJ = 125oC

o

T

= 25

C

J

= 10V

®

MOSFET

60

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

50

V

= 5V

DS

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

1.5 2.0 2.5 3.0 3.5 4.0 4.5

TJ = 150oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

©2007 Fairchild Semiconductor Corporation
FDD8424H Rev.C

TJ = -55oC

TJ = 25oC

60

V

= 0V

GS

10

TJ = 150oC

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.0 0.3 0.6 0.9 1.2 1.5

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Sourc e to Dr ain Di ode

TJ = 25oC

TJ = -55oC

Forward Voltage vs Source Current

4

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