Fairchild FDD7N60NZ, FDU7N60NZ service manual
FDD7N60NZ / FDU7N60NZ N-Channel MOSFET
G
S
D
G
S
D
G
S
D
D-PAK
I-PAK
G
D
S
FDD7N60NZ / FDU7N60NZ
N-Channel MOSFET
600V, 5.5A, 1.25
Features
•R
• Low Gate Charge ( Typ. 13nC)
•Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
•RoHS Compliant
= 1.05 ( Typ.)@ VGS = 10V, ID = 2.75A
DS(on)
( Typ. 7pF)
rss
Description
These N-Channel enhancement mode power field effect tran-
sistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor
correction.
December 2010
UniFET-II
TM
MOSFET Maximum Ratings T
Symbol Parameter FDD7N60NZ/FDU7N60NZ Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
P
D
, T
T
J
STG
T
L
Drain to Source Voltage 600 V
Gate to Source Voltage ±25 V
Drain Current
Drain Current - Pulsed (Note 1) 22 A
Single Pulsed Avalanche Energy (Note 2) 347 mJ
Avalanche Current (Note 1) 5.5 A
Repetitive Avalanche Energy (Note 1) 12.5 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
o
= 25
C unless otherwise noted*
C
-Continuous (T
-Continuous (T
(T
= 25oC) 90 W
C
- Derate above 25
= 25oC) 5.5
C
= 100oC) 3.3
C
o
C0.7W/
300
A
o
C
o
C
o
C
Thermal Characteristics
Symbol Parameter
R
JC
R
JA
©2010 Fairchild Semiconductor Corporation
FDD7N60NZ / FDU7N60NZ Rev. A
Thermal Resistance, Junction to Case 1.4
Thermal Resistance, Junction to Ambient 90
FDD7N60NZ/FDU7N60NZ
www.fairchildsemi.com1
Units
o
C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD7N60NZ FDD7N60NZ D-PAK 380mm 16mm 2500
FDU7N60NZ FDU7N60NZ I-PAK - - 70
FDD7N60NZ / FDU7N60NZ N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
BV
T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250A, VGS = 0V, TJ = 25oC 600 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±25V, V
I
= 250A, Referenced to 25oC-0.6-V/
D
V
= 600V, V
DS
= 480V, TC = 125oC - - 100
V
DS
= 0V - - 50
GS
= 0V - - ±10 A
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250A3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 2.75A - 1.05 1.25
= 20V, ID = 2.75A (Note 4)
Forward Transconductance
V
DS
-7.3-S
Dynamic Characteristics
C
C
C
Q
Q
Q
iss
oss
rss
g(tot)
gs
gd
Input Capacitance
Output Capacitance - 70 90 pF
Reverse Transfer Capacitance - 7 10 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 3 - nC
Gate to Drain “Miller” Charge - 5.6 - nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 30 70 ns
Turn-Off Delay Time - 40 90 ns
Turn-Off Fall Time - 25 60 ns
= 25V, VGS = 0V
V
DS
f = 1MHz
V
= 400V ID = 5.5A
DS
V
= 10V
GS
(Note 4, 5)
= 250V, ID = 5.5A
V
DD
V
= 10V, RG = 25
GS
(Note 4, 5)
- 550 730 pF
-1317nC
-17.545ns
A
o
C
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 23mH, IAS = 5.5A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 5.5A, di/dt 200A/s, VDD BV
4. Pulse Test: Pulse width 300s, Dual Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDD7N60NZ / FDU7N60NZ Rev. A
Maximum Continuous Drain to Source Diode Forward Current - - 5.5 A
Maximum Pulsed Drain to Source Diode Forward Current - - 22 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 1.4 - C
, Starting TJ = 25C
DSS
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/s (Note 4)
F
= 5.5A - - 1.4 V
SD
= 5.5A
SD
2
- 250 - ns
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Typical Performance Characteristics
2468
0.1
1
10
20
-55oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
s Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Volta g e [V ]
0.1 1 10 30
0.1
1
10
20
*Notes:
1. 250
s Pulse Test
2. T
C
= 25oC
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
V
GS
= 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
0.0 0.5 1.0 1.5
0.1
1
10
100
*Notes:
1. VGS = 0V
2. 250
s Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
036912
0.5
1.0
1.5
2.0
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[],
Drain-Source On-Resistance
ID, Drain Current [A]
10
-1
110
30
0
200
400
600
800
1000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MH z
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V ]
03691215
0
2
4
6
8
10
*Note: ID = 5.5A
VDS = 120V
V
DS
= 300V
V
DS
= 480V
V
GS
, Gate-Source Voltage [V]
Qg, Total Ga te Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDD7N60NZ / FDU7N60NZ N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDD7N60NZ / FDU7N60NZ Rev. A
3
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