Fairchild FDD7N25LZ service manual
FDD7N25LZ
G
S
D
G
S
D
G
S
D
D-PAK
N-Channel MOSFET
250V, 6.2A, 0.55Ω
FDD7N25LZ 250V N-Channel MOSFET
December 2010
TM
UniFET
Features
•R
• Low Gate Charge ( Typ.12nC)
•Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
•RoHS Compliant
= 0.43Ω ( Typ.)@ VGS = 10V, ID = 3.1A
DS(on)
( Typ. 8pF)
rss
Description
These N-Channel enhancement mode power field effect transis
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
P
D
, T
T
J
STG
T
L
Drain to Source Voltage 250 V
Gate to Source Voltage ±20 V
Drain Current
Drain Current - Pulsed (Note 1) 25 A
Single Pulsed Avalanche Energy (Note 2) 115 mJ
Avalanche Current (Note 1) 5.5 A
Repetitive Avalanche Energy (Note 1) 5.6 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
o
= 25
C unless otherwise noted*
C
-Continuous (T
-Continuous (T
(T
= 25oC) 56 W
C
- Derate above 25
= 25oC) 6.2
C
= 100oC) 3.7
C
o
C0.45W/
300
o
o
A
o
C
C
C
Thermal Characteristics
Symbol Parameter
R
θJC
R
θJA
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. A
Thermal Resistance, Junction to Case - 2.2
Thermal Resistance, Junction to Ambient - 110
Typ Max
Units
o
C/W
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Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD7N25LZ FDD7N25LZ D-PAK 380mm 16mm 2500
FDD7N25LZ 250V N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSSF
I
GSSR
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 250 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current, Forward VGS = 20V, V
Gate to Body Leakage Current, Reverse VGS = -20V, V
I
= 250μA, Referenced to 25oC - 0.25 - V/oC
D
V
= 250V, V
DS
= 200V, TC = 125oC--10
V
DS
= 0V - - 1
GS
= 0V - - 10 μA
DS
= 0V - - -10 μA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250μA1.0-2.0V
V
= 10V, ID = 3.1A - 0.43 0.55
Static Drain to Source On Resistance
Forward Transconductance
GS
= 5V, ID = 3.1A - 0.45 0.57
V
GS
= 20V, ID = 3.1A (Note 4)
V
DS
-7-S
Dynamic Characteristics
C
C
C
Q
Q
Q
iss
oss
rss
g(tot)
gs
gd
Input Capacitance
Output Capacitance - 65 85 pF
Reverse Transfer Capacitance - 8 12 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Total Gate Charge at 10V
V
= 250V ID = 6.2A
Gate to Source Gate Charge - 1.5 - nC
Gate to Drain “Miller” Charge - 4 - nC
DS
V
= 10V
GS
(Note 4, 5)
- 480 635 pF
-1216nC
μA
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 15 40 ns
Turn-Off Delay Time - 75 160 ns
Turn-Off Fall Time - 30 70 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6mH, I
3. I
≤ 6.2A, di/dt ≤ 200A/μs, VDD ≤ BV
SD
4. Pulse Test: Pulse Width ≤ 300 μs, Duty cycle ≤ 2.0%
5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 5.5 A
Maximum Pulsed Drain to Source Diode Forward Current - - 20 A
Drain to Source Diode Forward Voltage VGS = 0V, I
Reverse Recovery Time
Reverse Recovery Charge - 0.6 - μC
= 6.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 250V, ID = 6.2A
V
DD
V
= 10V, RG = 25Ω
GS
(Note 4, 5)
= 6.2A - - 1.4 V
SD
= 0V, I
V
GS
dI
/dt = 100A/μs (Note 4)
F
SD
= 6.2A
-1030ns
- 130 - ns
FDD7N25LZ Rev. A
2
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Typical Performance Characteristics
12345
0.1
1
10
30
-55oC
150oC
* Notes :
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-So u rc e V o lt a ge [ V ]
0.03 0.1 1 10
0.03
0.1
1
10
20
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
V
GS
= 10.0V
7.0V
5.0V
3.5V
3.0V
2.5V
0369121518
0.3
0.6
0.9
1.2
1.5
* Note : TJ = 25oC
VGS = 20V
VGS = 10V
R
DS(on)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.0 0.4 0.8 1.2 1.6
0.1
1
10
100
Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.1 1 10
5
10
100
1000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
* Note:
1. V
GS
= 0V
2. f = 1MH z
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V ]
30
036912
0
2
4
6
8
10
* Note : ID = 6.2A
VDS = 50V
V
DS
= 125V
V
DS
= 200V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gat e Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDD7N25LZ 250V N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDD7N25LZ Rev. A
3
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