Fairchild FDD7N20, FDU7N20 service manual
tm
FDD7N20 / FDU7N20
D
G
S
I-PAK
FDU Series
G
D
S
G
S
D
D-PAK
FDD Series
N-Channel MOSFET
200V, 5A, 0.69Ω
FDD7N20 / FDU7N20 200V N-Channel MOSFET
April 2007
TM
UniFET
Features
•R
• Low gate charge( Typ. 5nC )
• Low Crss ( Typ. 5pF )
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
, T
T
J
T
L
= 0.58Ω ( Typ. ) @ VGS = 10V, ID = 2.5A
DS(on)
= 25oC unless otherwise noted
C
Symbol Parameter Ratings Units
Drain to Source Voltage 200 V
Gate to Source Voltage ±30 V
-Continuous (T
-Continuous (T
(T
= 25oC) 43 W
C
- Derate above 25
STG
D r a i n C u r r e n t
D r a i n C u r r e n t - P u l s e d (Note 1) 15 A
Single Pulsed Avalanche Energy (Note 2) 62.5 mJ
Avalanche Current (Note 1) 5 A
Repetitive Avalanche Energy (Note 1) 4.3 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especically tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
= 25oC) 5
C
= 100oC) 3
C
o
C0.34W/
300
o
o
A
o
C
C
C
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
R
θJA
©2007 Fairchild Semiconductor Corporation
FDD7N20 / FDU7N20 Rev. A
Thermal Resistance, Junction to Case 2.9
Thermal Resistance, Junction to Ambient 110
o
C/W
www.fairchildsemi.com1
FDD7N20 / FDU7N20 200V N-Channel MOSFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDD7N20 FDD7N20TM D-PAK 380mm 16mm 2500
FDD7N20 FDD7N20TF D-PAK 380mm 16mm 2000
FDU7N20 FDU7N20 I-PAK - - 70
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
ΔBV
DSS
/ ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 200 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250μA, Referenced to 25oC-0.2-V/
D
V
= 200V, VGS=0V - - 1 μA
DS
= 160V, TC = 125oC--10μA
V
DS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 2.5A - 0.58 0.69 Ω
Forward Transconductance VDS = 40V, ID = 2.5A (Note 4) -6.2-S
Input Capacitance
Output Capacitance - 45 65 pF
Reverse Transfer Capacitance - 5 10 pF
= 25V, VGS = 0V
V
DS
f = 1 M H z
Total Gate Charge at 10V
V
= 160V, ID = 7A
Gate to Source Gate Charge - 1.7 - nC
Gate to Drain “Miller” Charge - 2.4 - nC
DS
V
= 1 0 V
GS
(Note 4, 5)
- 185 250 pF
-56.7nC
o
C
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 30 70 ns
Turn-Off Delay Time - 13 36 ns
Turn-Off Fall Time - 10 30 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L =5mH, I
3. I
≤ 5A, di/dt ≤ 200A/μs, VDD ≤ BV
SD
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 5 A
Maximum Pulsed Drain to Source Diode Forward Current - - 20 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 0.4 - μC
= 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 100V, ID = 7A
V
DD
R
= 25Ω
G
(Note 4, 5)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs (Note 4)
F
= 5A - - 1.4 V
SD
= 7A
SD
- 9 28 ns
- 120 - ns
FDD7N20 / FDU7N20 Rev. A
2
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Typical Performance Characteristics
0.1 1 10
0.01
0.1
1
10
20
25
* Notes :
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
0.04
4681012
1
10
-55oC
150oC
* Notes :
1. V
DS
= 25V
2. 250
μs Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
20
0.0 0.7 1.4 2.1 2.8 3.5
1
10
100
200
Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.2
0246810
0.3
0.6
0.9
1.2
1.5
* Note : TJ = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.1 1 10
0
100
200
300
400
500
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
* Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
30
0123456
0
2
4
6
8
10
VDS = 160V
VDS = 100V
* Note : ID = 7A
VDS = 50V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDD7N20 / FDU7N20 200V N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDD7N20 / FDU7N20 Rev. A
3
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