tm
FDD7N20 / FDU7N20
D
G
S
I-PAK
FDU Series
G
D
S
G
S
D
D-PAK
FDD Series
N-Channel MOSFET
200V, 5A, 0.69Ω
FDD7N20 / FDU7N20 200V N-Channel MOSFET
April 2007
TM
UniFET
Features
•R
• Low gate charge( Typ. 5nC )
• Low Crss ( Typ. 5pF )
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
, T
T
J
T
L
= 0.58Ω ( Typ. ) @ VGS = 10V, ID = 2.5A
DS(on)
= 25oC unless otherwise noted
C
Symbol Parameter Ratings Units
Drain to Source Voltage 200 V
Gate to Source Voltage ±30 V
-Continuous (T
-Continuous (T
(T
= 25oC) 43 W
C
- Derate above 25
STG
D r a i n C u r r e n t
D r a i n C u r r e n t - P u l s e d (Note 1) 15 A
Single Pulsed Avalanche Energy (Note 2) 62.5 mJ
Avalanche Current (Note 1) 5 A
Repetitive Avalanche Energy (Note 1) 4.3 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especically tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
= 25oC) 5
C
= 100oC) 3
C
o
C0.34W/
300
o
o
A
o
C
C
C
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
R
θJA
©2007 Fairchild Semiconductor Corporation
FDD7N20 / FDU7N20 Rev. A
Thermal Resistance, Junction to Case 2.9
Thermal Resistance, Junction to Ambient 110
o
C/W
www.fairchildsemi.com1
FDD7N20 / FDU7N20 200V N-Channel MOSFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDD7N20 FDD7N20TM D-PAK 380mm 16mm 2500
FDD7N20 FDD7N20TF D-PAK 380mm 16mm 2000
FDU7N20 FDU7N20 I-PAK - - 70
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
ΔBV
DSS
/ ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 200 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250μA, Referenced to 25oC-0.2-V/
D
V
= 200V, VGS=0V - - 1 μA
DS
= 160V, TC = 125oC--10μA
V
DS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 2.5A - 0.58 0.69 Ω
Forward Transconductance VDS = 40V, ID = 2.5A (Note 4) -6.2-S
Input Capacitance
Output Capacitance - 45 65 pF
Reverse Transfer Capacitance - 5 10 pF
= 25V, VGS = 0V
V
DS
f = 1 M H z
Total Gate Charge at 10V
V
= 160V, ID = 7A
Gate to Source Gate Charge - 1.7 - nC
Gate to Drain “Miller” Charge - 2.4 - nC
DS
V
= 1 0 V
GS
(Note 4, 5)
- 185 250 pF
-56.7nC
o
C
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 30 70 ns
Turn-Off Delay Time - 13 36 ns
Turn-Off Fall Time - 10 30 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L =5mH, I
3. I
≤ 5A, di/dt ≤ 200A/μs, VDD ≤ BV
SD
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 5 A
Maximum Pulsed Drain to Source Diode Forward Current - - 20 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 0.4 - μC
= 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 100V, ID = 7A
V
DD
R
= 25Ω
G
(Note 4, 5)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs (Note 4)
F
= 5A - - 1.4 V
SD
= 7A
SD
- 9 28 ns
- 120 - ns
FDD7N20 / FDU7N20 Rev. A
2
www.fairchildsemi.com
Typical Performance Characteristics
0.1 1 10
0.01
0.1
1
10
20
25
* Notes :
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
0.04
4681012
1
10
-55oC
150oC
* Notes :
1. V
DS
= 25V
2. 250
μs Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
20
0.0 0.7 1.4 2.1 2.8 3.5
1
10
100
200
Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.2
0246810
0.3
0.6
0.9
1.2
1.5
* Note : TJ = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.1 1 10
0
100
200
300
400
500
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
* Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
30
0123456
0
2
4
6
8
10
VDS = 160V
VDS = 100V
* Note : ID = 7A
VDS = 50V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDD7N20 / FDU7N20 200V N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDD7N20 / FDU7N20 Rev. A
3
www.fairchildsemi.com
Typical Performance Characteristics (Continued)
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0V
2. I
D
= 250μA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10V
2. I
D
= 2.5A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
110100
0.01
0.1
1
10
50
20μs
100μs
1ms
10ms
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25oC
2. T
J
= 150oC
3. Single Pulse
500
DC
25 50 75 100 125 150
0
1
2
3
4
5
6
I
D
, Drain Current [A]
TC, Case Temperature [oC]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
0.01
0.1
0.2
0.05
0.02
* Notes :
1. Z
θJC
(t) = 2.9oC/W Max.
2. Duty Factor, D=t
1/t2
3. TJM - TC = PDM * Z
θJC
(t)
0.5
Single pulse
Thermal Response [Z
θJC
]
Rectangular Pulse Duration [sec]
5
t
1
P
DM
t
2
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
FDD7N20 / FDU7N20 200V N-Channel MOSFET
Figure 11. Transient Thermal Response Curve
FDD7N20 / FDU7N20 Rev. A
4
www.fairchildsemi.com
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDD7N20 / FDU7N20 200V N-Channel MOSFET
FDD7N20 / FDU7N20 Rev. A
5
www.fairchildsemi.com
DUT
V
DS
+
_
Driver
R
G
Sam e Type
as DU T
V
GS
• dv/dt controlled by R
G
•ISDcontrolled by pulse period
V
DD
L
I
SD
10V
V
GS
( D riv e r )
I
SD
( D U T )
V
DS
( DUT )
V
DD
Body D iode
Forw ard Voltage D rop
V
SD
IFM, Body D iode Forward C urrent
Body D iode R everse Current
I
RM
Body D iode R ecovery dv/dt
di/dt
D =
G ate P ulse W idth
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Sam e Type
as DU T
V
GS
• dv/dt controlled by R
G
•ISDcontrolled by pulse period
V
DD
LL
I
SD
10V
V
GS
( D riv e r )
I
SD
( D U T )
V
DS
( DUT )
V
DD
Body D iode
Forw ard V oltage D rop
V
SD
IFM, B ody D iode Forw ard C urrent
Body D iode R everse C urrent
I
RM
Body D iode R ecovery dv/dt
di/dt
D =
G ate P ulse W idth
Gate Pulse Period
--------------------------
D =
G ate P ulse W idth
Gate Pulse Period
--------------------------
FDD7N20 / FDU7N20 200V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDD7N20 / FDU7N20 Rev. A
6
www.fairchildsemi.com
Mechanical Dimensions
D-PAK
FDD7N20 / FDU7N20 200V N-Channel MOSFET
FDD7N20 / FDU7N20 Rev. A
7
www.fairchildsemi.com
Mechanical Dimensions
I-PAK
FDD7N20 / FDU7N20 200V N-Channel MOSFET
FDD7N20 / FDU7N20 Rev. A
www.fairchildsemi.com8
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
Obsolete Not In Production This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I28
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
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