Fairchild FDD6N50F, FDU6N50F service manual
tm
FDD6N50F / FDU6N50F
D
G
S
G
S
D
D-PAK
FDD Series
I-PAK
FDU Series
G
D
S
N-Channel MOSFET
500V, 5.5A, 1.15Ω
FDD6N50F / FDU6N50F N-Channel MOSFET
January 2012
TM
UniFET
Features
•R
• Low gate charge ( Typ. 15nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P
D
, T
T
J
T
L
= 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A
DS(on)
( Typ. 6.3pF)
rss
= 25oC unless otherwise noted*
C
Symbol Parameter Ratings Units
Drain to Source Voltage 500 V
Gate to Source Voltage ±30 V
-Continuous (T
-Continuous (T
(T
= 25oC) 89 W
C
- Derate above 25
STG
D r a i n C u r r e n t
D r a i n C u r r e n t - P u l s e d (Note 1) 22 A
Single Pulsed Avalanche Energy (Note 2) 270 mJ
Avalanche Current (Note 1) 5.5 A
Repetitive Avalanche Energy (Note 1) 8.9 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
= 25oC) 5.5
C
= 100oC) 2.4
C
o
C0.71W/
300
o
o
A
o
C
C
C
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
R
θJA
*When mounted on the minimum pad size recommended (PCB Mount)
©2012 Fairchild Semiconductor Corporation
FDD6N50F / FDU6N50F Rev.C0
Thermal Resistance, Junction to Case 1.4
Thermal Resistance, Junction to Ambient 83
o
C/W
www.fairchildsemi.com1
FDD6N50F / FDU6N50F N-Channel MOSFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDD6N50F FDD6N50FTM D-PAK 380mm 16mm 2500
FDD6N50F FDD6N50FTF D-PAK 380mm 16mm 2000
FDU6N50F FDU6N50FTU I-PAK - - 70
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
ΔBV
DSS
/ ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250μA, Referenced to 25oC - 0.15 - V/oC
D
V
= 500V, V
DS
= 400V, TC = 125oC - - 100
V
DS
= 0V - - 10
GS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 2.75A - 0.95 1.15 Ω
Forward Transconductance VDS = 40V, ID = 2.75A (Note 4) -4.3-S
Input Capacitance
Output Capacitance - 85 115 pF
Reverse Transfer Capacitance - 6.3 9.5 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Total Gate Charge at 10V
V
= 400V, ID = 6A
Gate to Source Gate Charge - 4.4 - nC
Gate to Drain “Miller” Charge - 6.1 - nC
DS
V
= 10V
GS
( Note 4 , 5)
- 720 960 pF
-1519.8nC
μA
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 28.3 66.6 ns
Turn-Off Delay Time - 33.4 76.7 ns
Turn-Off Fall Time - 20.5 51 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 16mH, I
3: I
≤ 5.5A, di/dt ≤ 200A/μs, VDD ≤ BV
SD
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 5.5 A
Maximum Pulsed Drain to Source Diode Forward Current - - 22 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 0.15 - μC
= 5.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 250V, ID = 6A
V
DD
R
= 25Ω
G
(N ote 4, 5)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs (Note 4)
F
= 5.5A - - 1.5 V
SD
= 5.5A
SD
-1744ns
-85-ns
FDD6N50F / FDU6N50F Rev.C0
2
www.fairchildsemi.com
Typical Performance Characteristics
0.1 1 10
0.1
1
10
20
0.04
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
28
5678910
1
10
150oC
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
20
0.0 0.5 1.0 1.5 2.0
0.1
1
10
100
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0481216
0.6
1.2
1.8
2.4
*Note: TJ = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.1 1 10
0
300
600
900
1200
1500
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
30
0481216
0
2
4
6
8
10
*Note: ID = 6A
VDS = 100V
V
DS
= 250V
V
DS
= 400V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDD6N50F / FDU6N50F N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDD6N50F / FDU6N50F Rev.C0
3
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