Fairchild FDD6780A, FDU6780A-F071 service manual
January 2009
FDD6780A / FDU6780A_F071
N-Channel PowerTrench® MOSFET
25 V, 8.6 mΩ
Features
Max r
Max r
100% UIL test
RoHS Compliant
= 8.6 mΩ at VGS = 10 V, ID = 16.4 A
DS(on)
= 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low r
switching speed.
DS(on)
and fast
Applications
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
D
FDD6780A / FDU6780A_F071 N-Channel Power Trench
G
S
D-PAK
(TO-252)
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 25 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 30
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 100
Single Pulse Avalanche Energy (Note 3) 24 mJ
Power Dissipation TC = 25 °C 32.6
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +175 °C
D
G
D
S
Short-Lead I-PAK
(TO-251AA)
= 25 °C unless otherwise noted
C
G
S
= 25 °C 48
C
= 25 °C (Note 1a) 16.4
A
= 25 °C (Note 1a) 3.7
A
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case TO-252, TO-251 4.6
Thermal Resistance, Junction to Ambient TO-252 (Note 1a) 40
Package Marking and Ordering Information
®
MOSFET
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDD6780A FDD6780A D-PAK (TO-252) 13 ’’ 12 mm 2500 units
FDU6780A FDU6780A_F071 TO-251AA N/A(Tube) N/A 75 units
©2009 Fairchild Semiconductor Corporation
FDD6780A / FDU6780A_F071 Rev.C
1
www.fairchildsemi.com
FDD6780A / FDU6780A_F071 N-Channel Power Trench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 25 V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 20 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 µA, referenced to 25 °C 14 mV/°C
D
= 0 V 1 µA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 1.9 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
J
Static Drain to Source On Resistance
I
= 250 µA, referenced to 25 °C -5 mV/°C
D
V
= 10 V, ID = 16.4 A 6.8 8.6
GS
= 10 V, ID = 16.4 A
V
GS
Short-Lead I-PAK version
V
= 4.5 V, ID = 12.2 A 14.1 19.0
GS
= 4.5 V, ID = 12.2 A
V
GS
Short-Lead I-PAK version
V
= 10 V , ID = 16.4 A, TJ = 150 °C 10.3 13.0
GS
7.0 8.8
14.3 19.2
Forward Transconductance VDS = 5 V, ID = 16.4 A 70 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 197 265 pF
Reverse Transfer Capacitance 181 275 pF
= 13 V, VGS = 0 V,
V
DS
f = 1MHz
Gate Resistance f = 1MHz 1.2 Ω
927 1235 pF
mΩ
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 310ns
Turn-Off Delay Time 16 29 ns
Fall Time 310ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 5 V 9.2 13 nC
Gate to Source Charge 2.8 nC
Gate to Drain “Miller” Charge 4.0 nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 4 10 nC
714ns
= 13 V, ID = 16.4 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
17 24 nC
= 13 V,
V
DD
I
= 16.4 A
D
V
= 0 V, IS = 3.1 A (Note 2) 0.8 1.2
GS
= 0 V, IS = 16.4 A (Note 2) 0.9 1.3
V
GS
= 16.4 A, di/dt = 100 A/µs
I
F
15 27 ns
V
©2009 Fairchild Semiconductor Corporation
FDD6780A / FDU6780A_F071 Rev.C
2
www.fairchildsemi.com
Notes:
1: R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
R
is guaranteed by design while R
θJC
is determined by the user’s board des ign.
θJA
FDD6780A / FDU6780A_F071 N-Channel Power Trench
a)
40 °C/W when mounted on a
1 in2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: EAS of 24 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 7 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 13 A.
b)
96 °C/W when mounted
on a minimum pad.
®
MOSFET
©2009 Fairchild Semiconductor Corporation
FDD6780A / FDU6780A_F071 Rev.C
3
www.fairchildsemi.com
Loading...