(
)
FDD6760A
N-Channel PowerTrench® MOSFET
25 V, 3.2 mΩ
Features
Max r
Max r
100% UIL test
RoHS Compliant
= 3.2 mΩ at VGS = 10 V, ID = 27 A
DS(on)
= 6.0 mΩ at VGS = 4.5 V, ID = 21 A
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low r
switching speed.
Applications
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
January 2009
and fast
DS(on)
FDD6760A N-Channel Power Trench
®
MOSFET
D
D
G
S
D-PAK
TO-252
G
TO-252
S
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
Drain to Source Voltage 25 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 50
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 200
Single Pulse Avalanche Energy (Note 3) 72 mJ
Power Dissipation TC = 25 °C 65
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +175 °C
= 25 °C unless otherwise noted
C
= 25 °C 131
C
= 25 °C (Note 1a) 27
A
= 25 °C (Note 1a) 3.7
A
A
W
R
θJC
R
θJA
Thermal Resistance, Junction to Case 2.3
Thermal Resistance, Junction to Ambient (Note 1a) 40
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD6760A FDD6760A D-PAK (TO-252) 13 ’’ 12 mm 2500 units
©2009 Fairchild Semiconductor Corporation
FDD6760A Rev.C
°C/W
1
www.fairchildsemi.com
FDD6760A N-Channel Power Trench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 25 V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 20 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 µA, referenced to 25 °C 16 mV/°C
D
= 0 V 1 µA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 1.6 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
J
Static Drain to Source On Resistance
I
= 250 µA, referenced to 25 °C -7 mV/°C
D
V
= 10 V, ID = 27 A 2.3 3.2
GS
= 4.5 V, ID = 21 A 4.4 6.0
GS
= 10 V, ID = 27 A, TJ = 150 °C 3.5 4.9
V
GS
Forward Transconductance VDS = 5 V, ID = 27 A 186 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 525 700 pF
Reverse Transfer Capacitance 470 710 pF
Gate Resistance f = 1MHz 1.3 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 918ns
Turn-Off Delay Time 28 ns
Fall Time 6ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 5 V 25 35 nC
Gate to Source Charge 6 nC
Gate to Drain “Miller” Charge 9.9 nC
= 13 V, VGS = 0 V,
V
DS
f = 1MHz
= 13 V, ID = 27 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
V
DD
I
= 17 A
D
= 13 V,
2380 3170 pF
10 20 ns
44 62 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
= 0 V, IS = 3.1 A (Note 2) 0.7 1.2
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
R
θJC
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: EAS of 72 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 12 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 29 A.
©2009 Fairchild Semiconductor Corporation
FDD6760A Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 8 16 nC
is the sum of the juncti on-t o- cas e a nd cas e-t o -am bi en t th e rma l res ist an ce whe re the ca s e th er ma l ref ere nc e i s de f ine d as the s older mounting surface of the drain pins.
is guaranteed by design while R
is determined by the user’s board design.
θJA
a)
40 °C/W when mounted on a
1 in2 pad of 2 oz copper
GS
= 0 V, IS = 27 A (Note 2) 0.8 1.3
V
GS
= 27A, di/dt = 100 A/µs
I
F
2
21 34 ns
b)
96 °C/W when mounted
on a minimum pad.
www.fairchildsemi.com
V
Typical Characteristics T
= 25 °C unless otherwise noted
J
FDD6760A N-Channel Power Trench
200
VGS = 10 V
VGS = 4.5 V
150
VGS = 6 V
100
DRAIN CURRENT (A)
50
,
D
I
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1.
1.8
1.6
On-Region Characteristics Figure 2.
ID = 27 A
= 10 V
V
GS
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 4 V
VGS = 3.5 V
1.4
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
T
,
JUNCTION TEMPERATURE
J
o
(
C
)
Fig u r e 3. N o r maliz e d On- Re s i s tanc e
vs Junction Temperature
4
V
= 3.5 V
3
2
NORMALIZED
GS
VGS = 4 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
V
= 4.5 V
GS
V
= 6 V
GS
1
V
= 10 V
GS
DRAIN TO SOURCE ON-RESISTANCE
0
0 50 100 150 200
I
,
DRAIN CURRENT (A)
D
Norm a l i z e d O n-Resist a n c e
vs Drain Current and Gate Voltage
14
)
Ω
12
m
(
10
8
DRAIN TO
,
6
DS(on)
r
4
2
SOURCE ON-RESISTANCE
0
246810
V
, GATE TO SOURCE VOLTA G E (V)
GS
Figure 4.
On-Re sistance vs Gate to
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
ID = 27 A
TJ = 150 oC
TJ = 25 oC
Source Voltage
®
MOSFET
200
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
150
V
= 3.5 V
DS
100
50
, DRAIN CURRENT (A)
D
I
0
0123456
TJ = 175 oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDD6760A Rev.C
TJ = 25 oC
TJ = -55 oC
200
V
= 0 V
GS
100
10
, REVERSE DRAIN CURRENT (A)
S
I
TJ = 175 oC
1
0.1
0.2 0.4 0.6 0.8 1.0 1.2
Figure 6.
TJ = 25 oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
Sou rce to Drain Diode
TJ = -55 oC
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDD6760A N-Channel Power Trench
Typical Characteristics T
= 25 °C unless otherwise noted
J
10
ID = 27 A
8
6
V
= 10 V
DD
4
VDD = 16 V
2
, GATE TO SOURCE VOLTAGE (V)
GS
V
0
0 9 18 27 36 45
Qg, GATE CHARGE (nC)
Figure 7.
Gate Charge Characteristics Figure 8.
100
TJ = 125 oC
10
TJ = 150 oC
, AVALANCHE CURRENT (A)
AS
I
1
0.001 0.01 0.1 1 10 100 1000
tAV, TIME IN AVALANCHE ( ms)
Figure 9.
Unclamped Inductive
TJ = 25 oC
Switching Capability
VDD = 13 V
6000
1000
CAPACITANCE (pF)
f = 1 MHz
= 0 V
V
GS
100
0.1 1 10 30
VDS, DRAIN TO SOURCE VOLTA GE (V)
Capacitance vs Drain
to Source Voltage
120
V
= 10 V
GS
90
V
= 4.5 V
GS
Limited by Package
0
R
= 2.3 oC/W
θ
JC
T
,
CASE TEMPERATURE
c
o
(
C
)
Maximum Continuous Drain
60
DRAIN CURRENT (A)
,
30
D
I
25 50 75 100 125 150 175
Figure 10.
Current vs Case Temperature
C
iss
C
oss
C
rss
®
MOSFET
500
100
THIS AREA IS
10
LIMITED BY r
1
, DRAIN CURRENT (A)
D
I
0.1
0.1 1 10 70
DS(on)
SINGLE PULSE
T
= MAX RATED
J
= 2.3 oC/W
R
θ
JC
T
= 25 oC
C
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2009 Fairchild Semiconductor Corporation
FDD6760A Rev.C
3000
10 us
1000
100 us
1 ms
10 ms
100 ms
DC
100
PEAK TRANSIENT POWER (W)
,
)
PK
(
P
20
10-510
VGS = 10 V
-4
-3
10
t, PULSE WIDTH (sec)
-2
10
SINGLE PULSE
= 2.3 oC/W
R
θ
JC
= 25 oC
T
C
-1
10
1
10
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDD6760A N-Channel Power Trench
Typical Characteristics T
2
1
JC
θ
Z
0.1
IMPEDANCE,
NORMALIZED THERMAL
0.02
10
2
1
JA
θ
Z
0.1
IMPEDANCE,
0.01
NORMALIZED THERMAL
0.001
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
-4
10
-3
10
10
= 25 °C unless otherwise noted
J
-4
SINGLE PULSE
= 2.3 oC/W
R
θ
JC
-3
10
-2
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
SINGLE PULSE
R
= 96 oC/W
θ
JA
(Note 1b)
-2
10
-1
10
t, RECTANGULAR PULSE DURATION (sec)
0
10
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
P
DM
t
1
t
2
1/t2
x R
+ T
θJC
θJC
C
-1
10
1
®
MOSFET
P
DM
t
1
t
2
2
x R
+ T
θJA
θJA
A
1
10
100 1000
©2009 Fairchild Semiconductor Corporation
FDD6760A Rev.C
Figure 14.
Transient Thermal Response Curve
5
www.fairchildsemi.com
TRADEMARKS
tm
®
tm
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *
™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FlashWriter
FPS™
F-PFS™
* EZSWITCH™ and FlashWriter
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
®
®
®
®
®
*
®
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
PDP SPM™
Power-SPM™
PowerTrench
®
®
®
®
PowerXS™
SM
Programmable Active Droop™
®
QFET
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
The Power Franchise
®
TinyBoost™
TinyBuck™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
®
®
XS™
FDD6760A N-Channel Power Trench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonabl y expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing probl em in the industry. All manufactures of semiconducto r products are experiencin g counterfeiting o f their
parts. Customers who inadvertently purchase count erfeit parts exper ience many probl ems su ch as loss of bran d rep uta tion, su bsta n dard performa nce, fai led
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Farichild strongly encourage s customers to purch ase Farichild parts either d irectly from Fairchild or from Au thorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is
committed to combat this global problem and encourage ou r customers to do their par t in stopping this practice by buying direct or from authorized distrib utors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product develo pment. S pecifications may
change in any manner without notice.
Datasheet contains preliminary data; supp lementary da ta will be published at a later d ate.
Fairchild Semiconductor reserves the right to make cha nges at any time without notice to
improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is disco ntinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I37
©2009 Fairchild Semiconductor Corporation
FDD6760A Rev.C
www.fairchildsemi.com
Loading...