Fairchild MOSFET, FDD6690A User Manual
FDD6690A
FDD6690A
30V N-Channel PowerTrench MOSFET
July 2003
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC converter
• Motor Drives
Features
• 46 A, 30 V R
R
• Low gate charge
• Fast Switching Speed
• High performance trench technology for extremely
low R
DS(ON)
= 12 mΩ @ VGS = 10 V
DS(ON)
= 14 mΩ @ VGS = 4.5 V
DS(ON)
D
D
G
S
D-PAK
TO-252
(TO-252)
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
G
S
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Continuous Drain Current @TC=25°C (Note 3) 46 A
@TA=25°C (Note 1a) 12
Pulsed (Note 1a) 100
Power Dissipation @TC=25°C (Note 3) 56
@TA=25°C (Note 1a) 3.3
@TA=25°C (Note 1b) 1.5
Operating and Storage Junction Temperature Range –55 to +175
±20
V
W
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case (Note 1) 2.7
Thermal Resistance, Junction-to-Ambient (Note 1a) 45
(Note 1b)
96
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD6690A FDD6690A D-PAK (TO-252) 13’’ 12mm 2500 units
2003 Fairchild Semiconductor Corp.
°C/W
FDD6690A Rev EW)
Electrical Characteristics T
FDD6690A
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
E
AS
I
AS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID= 12A 180 mJ
Drain-Source Avalanche Current 12 A
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
30 V
24
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage
VGS = ±20 V, VDS = 0 V ±100
mV/°C
µA
nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
1 1.9 3 V
–5
mV/°C
Temperature Coefficient
Static Drain–Source
On–Resistance
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 12 A,TJ=125°C
7.7
9.9
11.4
12
14
19
mΩ
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 10 V, ID = 12 A 47 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance 1230 pF
Output Capacitance 325 pF
Reverse Transfer Capacitance
VDS = 15 V, V
f = 1.0 MHz
GS
= 0 V,
150 pF
Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.5 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 10 19 ns
Turn–On Rise Time 7 13 ns
Turn–Off Delay Time 29 46 ns
Turn–Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
12 21 ns
Total Gate Charge 13 18 nC
Gate–Source Charge 3.5 nC
Gate–Drain Charge
VDS = 15V, ID = 12 A,
VGS = 5 V
5.1 nC
FDD6690A Rev. EW)
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